Maker : Hewlett-Packard
Part No. : 5082-3379

  Datasheet PDF : 5082-3379.pdf
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www.DataSheet4U.com PIN Diodes for RF Switching and Attenuating Technical Data 1N5719, 1N5767, 5082-3001, 5082-3039, 5082-3077, 5082-3080/81, 5082-3188, 5082-3379 Features • Low Harmonic Distortion • Large Dynamic Range • Low Series Resistance • Low Capacitance Description/Applications These general purpose switching diodes are intended for low power switching applications such as RF duplexers, antenna switching matrices, digital phase shifters, and time multiplex filters. The 5082-3188 is optimized for VHF/UHF bandswitching. The RF resistance of a PIN diode is a function of the current flowing in the diode. These current controlled resistors are specified for use in control applications such as variable RF attenuators, automatic gain control circuits, RF modulators, DataSheet4U.com electrically tuned filters, analog phase shifters, and RF limiters. Outline 15 diodes are available on tape and reel. The tape and reel specification is patterned after RS-296-D. 0.41 (.016) 0.36 (.014) 25.4 (1.00) MIN. 1.93 (.076) 1.73 (.068) DataShee 4.32 (.170) 3.81 (.150) CATHODE 25.4 (1.00) MIN. DIMENSIONS IN MILLIMETERS AND (INCHES). Outline 15 Maximum Ratings Junction Operating and Storage Temperature Range ................................................ -65°C to +150°C Power Dissipation 25°C ..................................................................... 250 mW (Derate linearly to zero at 150°C) Peak Inverse Voltage (PIV) ........................................................ same as VBR Maximum Soldering Temperature ....................................... 260°C for 5 sec DataSheet4U.com DataSheet4U.com DataSheet 4 U .com www.DataSheet4U.com 2 Mechanical Specifications The Agilent Outline 15 package has a glass hermetic seal with dumet leads. The lead finish is 955 tin-lead (SnPb) for all PIN diodes. The leads on the Outline 15 package should be restricted so that the bend starts at least 1/ 16 inch (1.6 mm) from the glass body. Typical package inductance and capacitance are 2.5 nH and 0.13 pF, respectively. Marking is by digital coding with a cathode band. General Purpose Diodes Electrical Specifications at TA = 25°C Part Number 5082Maximum Total Capacitance CT (pF) Minimum Breakdown Voltage VBR (V) Maximum Residual Series Resistance RS (Ω) Effective Carrier Reverse Recovery Lifetime Time τ (ns) trr (ns) 100 (min.) 100 (min.) 100 (min.) 100 (min.) 70 (typ.)* IF = 50 mA IR = 250 mA *IF = 10 mA *IR = 6 mA 100 (typ.) 100 (typ.) 100 (typ.) 100 (typ) 12 (typ.) IF = 20 mA VR = 10 V 90% Recovery et4U.com General Purpose Switching and Attenuating 3001 0.25 200 1.0 3039 0.25 150 1.25 1N5719 0.3** 150 1.25 3077 0.3 200 1.5 Band Switching 3188 1.0* 35 0.6** VR = VBR IF =100 mA Test VR = 50 V Conditions *VR = 20 V Measure DataSheet4U.com *IF = 20 mA **VR = 100 V IR ≤ 10 µA **IF = 10 mA f = 1 MHz f = 100 MHz DataShee Notes: Typical CW power switching capability for a shunt switch in a 50 Ω system is 2.5 W. RF Current Controlled Resistor Diodes Electrical Specifications at TA = 25°C Max. Effective Min. Residual Max. Carrier Breakdown Series Total Lifetime Voltage Resistance Capacitance t (ns) VBR (V) RS (Ω) CT (pF) 1300 (typ.) 100 2.5 0.4 1300 (typ.) 100 2.5 0.4 1300 (typ.) 50 0.4 2500 (typ.) 100 3.5 0.4 High Resistance Limit, RH (W) Min. 1000 1000 1500 Max. Low Resistance Limit, RL (W) Min. Max. 8** 8** 8** 8** Max. Difference in Resistance vs. Bias Slope, Dc Part Number 5082-3080 1N5767* 5082-3379 5082-3081 Test IF = 50 mA VR = VBR, IF = 100 mA Conditions IR = 250 mA Measure f = 100 MHz IR ≤ 10 µA VR = 50 V f = 1 MHz IF = 0.01 mA f = 100 MHz IF = 1.0 mA Batch IF = 20 mA** Matched at f = 100 MHz IF = 0.01 mA and 1.0 mA f = 100 MHz *The 1N5767 has the additional specifications: τ = 1.0 msec minimum IR = 1 µA maximum at VR = 50 V VF = 1 V maximum at IF = 100 mA. DataSheet4U.com DataSheet4U.com DataSheet 4 U .com www.DataSheet4U.com 3 Typical Parameters at TA = 25°C (unless other...

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