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www.DataSheet4U.com 2PD602AQL; 2PD602ARL; 2PD602ASL 50 V, 500 mA NPN general-purpose transistors Rev. 01 — 27 October 2008 Product data sheet 1. Product profile 1.1 General description NPN general-purpose transistors in a small SOT23 (TO-236AB) Surface-Mounted Device (SMD) plastic package. Table 1. Product overview Package NXP 2PD602AQL 2PD602ARL 2PD602ASL 2PD602AQL/DG 2PD602ARL/DG 2PD602ASL/DG [1] /DG: halogen-free Type number[1] PNP complement JEDEC TO-236AB 2PB710ARL 2PB710ASL SOT23 SOT23 TO-236AB 2PB710ARL/DG 2PB710ASL/DG 1.2 Features I I I I General-purpose transistors Three current gain selections AEC-Q101 qualified Small SMD plastic package 1.3 Applications I General-purpose switching and amplification 1.4 Quick reference data Table 2. Symbol VCEO IC Quick reference data Parameter collector-emitter voltage collector current Conditions open base Min Typ Max 50 500 Unit V mA NXP Semiconductors www.DataSheet4U.com 2PD602AxL 50 V, 500 mA NPN general-purpose transistors Quick reference data …continued Parameter DC current gain hFE group Q hFE group R hFE group S Conditions VCE = 10 V; IC = 150 mA [1] Table 2. Symbol hFE Min Typ Max Unit 85 120 170 - 170 240 340 [1] Pulse test: tp ≤ 300 µs; δ ≤ 0.02. 2. Pinning information Table 3. Pin 1 2 3 Pinning Description base emitter collector 1 2 2 sym021 Simplified outline 3 Graphic symbol 3 1 3. Ordering information Table 4. Ordering information Package Name 2PD602AQL 2PD602ARL 2PD602ASL 2PD602AQL/DG 2PD602ARL/DG 2PD602ASL/DG [1] /DG: halogen-free Type number[1] Description plastic surface-mounted package; 3 leads Version SOT23 - - plastic surface-mounted package; 3 leads SOT23 4. Marking Table 5. Marking codes Marking code[1] SH* SG* SF* Type number 2PD602AQL 2PD602ARL 2PD602ASL 2PD602AXL_1 © NXP B.V. 2008. All rights reserved. Product data sheet Rev. 01 — 27 October 2008 2 of 9 NXP Semiconductors www.DataSheet4U.com 2PD602AxL 50 V, 500 mA NPN general-purpose transistors Marking codes …continued Marking code[1] SX* SW* SV* Table 5. Type number 2PD602AQL/DG 2PD602ARL/DG 2PD602ASL/DG [1] * = -: made in Hong Kong * = p: made in Hong Kong * = t: made in Malaysia * = W: made in China 5. Limiting values Table 6. Limiting values In accordance with the Absolute Maximum Rating System (IEC 60134). Symbol VCBO VCEO VEBO IC ICM IBM Ptot Tj Tamb Tstg [1] Parameter collector-base voltage collector-emitter voltage emitter-base voltage collector current peak collector current peak base current total power dissipation junction temperature ambient temperature storage temperature Conditions open emitter open base open collector single pulse; tp ≤ 1 ms single pulse; tp ≤ 1 ms Tamb ≤ 25 °C [1] Min −55 −65 Max 60 50 5 500 1 200 250 150 +150 +150 Unit V V V mA A mA mW °C °C °C Device mounted on an FR4 Printed-Circuit Board (PCB), single-sided copper, tin-plated and standard footprint. 6. Thermal characteristics Table 7. Symbol Rth(j-a) [1] Thermal characteristics Parameter Conditions [1] Min - Typ - Max 500 Unit K/W thermal resistance from junction in free air to ambient Device mounted on an FR4 PCB, single-sided copper, tin-plated and standard footprint. 2PD602AXL_1 © NXP B.V. 2008. All rights reserved. Product data sheet Rev. 01 — 27 October 2008 3 of 9 NXP Semiconductors www.DataSheet4U.com 2PD602AxL 50 V, 500 mA NPN general-purpose transistors 7. Characteristics Table 8. Characteristics Tamb = 25 °C unless otherwise specified. Symbol ICBO Parameter Conditions VCB = 60 V; IE = 0 A; Tj = 150 °C IEBO hFE emitter-base cut-off current DC current gain hFE group Q hFE group R hFE group S VCEsat fT collector-emitter saturation voltage transition frequency VEB = 4 V; IC = 0 A VCE = 10 V; IC = 500 mA VCE = 10 V; IC = 150 mA VCE = 10 V; IC = 150 mA VCE = 10 V; IC = 150 mA IC = 300 mA; IB = 30 mA VCE = 10 V; IC = 50 mA; f = 100 MHz [1] Min 40 85 120 170 - Typ - Max 10 5 10 170 240 340 600 Unit nA µA nA ... |
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