Maker : ON Semiconductor
Part No. : 6073A

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2N6071A/B Series www.DataSheet4U.com Preferred Device Sensitive Gate Triacs Silicon Bidirectional Thyristors Designed primarily for full-wave AC control applications, such as light dimmers, motor controls, heating controls and power supplies; or wherever full-wave silicon gate controlled solid-state devices are needed. Triac type thyristors switch from a blocking to a conducting state for either polarity of applied anode voltage with positive or negative gate triggering. Features http://onsemi.com TRIACS 4.0 A RMS, 200 − 600 V • Sensitive Gate Triggering Uniquely Compatible for Direct Coupling • • • • • to TTL, HTL, CMOS and Operational Amplifier Integrated Circuit Logic Functions Gate Triggering: 4 Mode − 2N6071A, B; 2N6073A, B; 2N6075A, B Blocking Voltages to 600 V All Diffused and Glass Passivated Junctions for Greater Parameter Uniformity and Stability Small, Rugged, Thermopad Construction for Low Thermal Resistance, High Heat Dissipation and Durability Device Marking: Device Type, e.g., 2N6071A, Date Code MT2 G MT1 REAR VIEW SHOW TAB 3 TO−225 CASE 077 STYLE 5 2 1 MARKING DIAGRAM YWW 2N 607xyG = 1, 3, 5 = A, B = Year = Work Week = Pb−Free Package 1. Cathode 2. Anode 3. Gate x y Y WW G ORDERING INFORMATION See detailed ordering and shipping information in the package dimensions section on page 7 of this data sheet. Preferred devices are recommended choices for future use and best overall value. *For additional information on our Pb−Free strategy and soldering details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D. © Semiconductor Components Industries, LLC, 2006 1 April, 2006 − Rev. 7 Publication Order Number: 2N6071/D 2N6071A/B Series MAXIMUM RATINGS (TJ = 25°C unless otherwise noted) Rating www.DataSheet4U.com *Peak Repetitive Off-State Voltage (Note 1) (TJ = *40 to 110°C, Sine Wave, 50 to 60 Hz, Gate Open) 2N6071A,B 2N6073A,B 2N6075A,B *On-State RMS Current (TC = 85°C) Full Cycle Sine Wave 50 to 60 Hz *Peak Non−repetitive Surge Current (One Full cycle, 60 Hz, TJ = +110°C) Circuit Fusing Considerations (t = 8.3 ms) *Peak Gate Power (Pulse Width ≤ 1.0 ms, TC = 85°C) *Average Gate Power (t = 8.3 ms, TC = 85°C) *Peak Gate Voltage (Pulse Width ≤ 1.0 ms, TC = 85°C) *Operating Junction Temperature Range *Storage Temperature Range Mounting Torque (6-32 Screw) (Note 2) Symbol VDRM, VRRM 200 400 600 IT(RMS) ITSM I2t PGM PG(AV) VGM TJ Tstg − 4.0 30 3.7 10 0.5 5.0 −40 to +110 −40 to +150 8.0 A A A2s W W V °C °C in. lb. Value Unit V Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect device reliability. 1. VDRM and VRRM for all types can be applied on a continuous basis. Blocking voltages shall not be tested with a constant current source such that the voltage ratings of the devices are exceeded. 2. Torque rating applies with use of a compression washer. Mounting torque in excess of 6 in. lb. does not appreciably lower case-to-sink thermal resistance. Main terminal 2 and heatsink contact pad are common. THERMAL CHARACTERISTICS Characteristic *Thermal Resistance, Junction−to−Case Thermal Resistance, Junction−to−Ambient Maximum Lead Temperature for Soldering Purposes 1/8″ from Case for 10 Seconds *Indicates JEDEC Registered Data. Symbol RqJC RqJA TL Max 3.5 75 260 Unit °C/W °C/W °C http://onsemi.com 2 2N6071A/B Series ELECTRICAL CHARACTERISTICS (TC = 25°C unless otherwise noted; Electricals apply in both directions) Characteristic www.DataSheet4U.com OFF CHARACTERISTICS *Peak Repetitive Blocking Current (VD = Rated VDRM, VRRM; Gate Open) ON CHARACTERISTICS *Peak On-State Voltage (Note 3) (ITM = "6.0 A Peak) *Gate Trigger Voltage (Continuous DC), All Quadrants (Main Terminal Voltage = 12 Vdc, RL =...

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