Maker : STMicroelectronics
Part No. : 60N03L-10

  Datasheet PDF : 60N03L-10.pdf
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STB60N03L-10 N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTOR PRELIMIRARY DATA TYPE STB60N03L-10 www.DataSheet4U.com s s s s s s s s V DSS 30 V R DS(on) < 0.01 Ω ID 60 A s s TYPICAL RDS(on) = 0.0085 Ω AVALANCHE RUGGED TECHNOLOGY 100% AVALANCHE TESTED REPETITIVE AVALANCHE DATA AT 100oC LOW GATE CHARGE HIGH CURRENT CAPABILITY 175 oC OPERATING TEMPERATURE APPLICATION ORIENTED CHARACTERIZATION THROUGH-HOLE I2PAK (TO-262) POWER PACKAGE IN TUBE (SUFFIX "-1") SURFACE-MOUNTING D2PACK (TO-263) POWER PACKAGE IN TUBE (NO SUFFIX) OR IN TAPE & REEL (SUFFIX "T4") 3 12 3 1 I2PAK TO-262 D2PAK TO-263 APPLICATIONS HIGH CURRENT, HIGH SPEED SWITCHING s SOLENOID AND RELAY DRIVERS s REGULATORS s DC-DC & DC-AC CONVERTERS s AUTOMOTIVE ENVIRONMENT (INJECTION, ABS, AIR-BAG, LAMPDRIVERS, Etc.) s INTERNAL SCHEMATIC DIAGRAM ABSOLUTE MAXIMUM RATINGS Symbol V DS VDGR V GS ID ID I DM (•) P tot T stg Tj Parameter Drain-source Voltage (V GS = 0) Drain- gate Voltage (R GS = 20 kΩ) Gate-source Voltage Drain Current (continuous) at T c = 25 C Drain Current (continuous) at T c = 100 o C Drain Current (pulsed) Total Dissipation at T c = 25 C Derating Factor Storage Temperature Max. Operating Junction Temperature o o Value 30 30 ± 20 60 42 240 150 1 -65 to 175 175 Unit V V V A A A W W/ o C o o C C (•) Pulse width limited by safe operating area March 1996 1/6 STB60N03L-10 THERMAL DATA R thj-case R thj-amb R thj-amb Tl Thermal Resistance Junction-case Thermal Resistance Junction-ambient Thermal Resistance Case-sink Maximum Lead Temperature For Soldering Purpose Max Max Typ 1 62.5 0.5 300 o o C/W C/W o C/W o C AVALANCHE CHARACTERISTICS Symbol I AR www.DataSheet4U.com Parameter Avalanche Current, Repetitive or Not-Repetitive (pulse width limited by T j max, δ < 1%) Single Pulse Avalanche Energy (starting T j = 25 o C, ID = I AR , V DD = 25 V) Repetitive Avalanche Energy (pulse width limited by T j max, δ < 1%) Avalanche Current, Repetitive or Not-Repetitive (T c = 100 o C, pulse width limited by T j max, δ < 1%) Max Value 60 600 150 42 Unit A mJ mJ A E AS EAR I AR ELECTRICAL CHARACTERISTICS (Tcase = 25 oC unless otherwise specified) OFF Symbol V (BR)DSS I DSS I GSS Parameter Drain-source Breakdown Voltage Test Conditions I D = 250 µA VGS = 0 Min. 30 250 1000 ± 100 Typ. Max. Unit V µA µA nA Zero Gate Voltage V DS = Max Rating Drain Current (V GS = 0) V DS = Max Rating x 0.8 Gate-body Leakage Current (V DS = 0) V GS = ± 20 V T c = 125 o C ON (∗) Symbol V GS(th) R DS(on) Parameter Gate Threshold Voltage V DS = VGS Static Drain-source On Resistance Test Conditions ID = 250 µA T c = 100 o C T c = 25 o C T c = 100 o C 60 Min. 1 Typ. 1.7 0.0085 0.0012 Max. 2.5 0.01 0.02 0.015 0.03 Unit V Ω Ω Ω Ω A V GS = 10 V I D = 30 A V GS = 10 V I D = 30 A V GS = 5 V I D = 30 A V GS = 5 V I D = 30 A ID(on) On State Drain Current V DS > I D(on) x R DS(on)max V GS = 10 V DYNAMIC Symbol g fs (∗) C iss C oss C rss Parameter Forward Transconductance Input Capacitance Output Capacitance Reverse Transfer Capacitance Test Conditions V DS > I D(on) x R DS(on)max V DS = 25 V f = 1 MHz I D = 30 A V GS = 0 Min. 30 Typ. 50 3500 1200 450 Max. Unit S pF pF pF 2/6 STB60N03L-10 ELECTRICAL CHARACTERISTICS (continued) SWITCHING ON Symbol t d(on) tr (di/dt) on Qg Q gs www.DataSheet4U.comQ gd Parameter Turn-on Time Rise Time Turn-on Current Slope Total Gate Charge Gate-Source Charge Gate-Drain Charge Test Conditions V DD = 15 V R G = 4.7 Ω V DD = RG = Ω V DD = 10 V I D = 38 A V GS = 5 V ID = V GS = V I D = 60 A V GS = 15 V 130 Min. Typ. 40 400 Max. Unit ns ns A/µs nC SWITCHING OFF Symbol t r(Voff) tf tc Parameter Off-voltage Rise Time Fall Time Cross-over Time Test Conditions V DD = 24 V I D = 75 A R G = 4.7 Ω V GS = 5 V (see test circuit, figure 5) Min. Typ. 60 240 310 Max. Unit ns ns ns SOURCE DRAIN DIODE Symbol I SD I SDM (•) V SD (∗) t rr Q rr I RRM Parameter Source-drain Current Source-drain Current (pulsed) Forward On Voltag...

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