Maker : Vishay Siliconix
Part No. : 60N08-07T

  Datasheet PDF : 60N08-07T.pdf
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Product Information

SUM60N08-07T New Product Vishay Siliconix N-Channel 75-V (D-S) MOSFET with Sensing Diode FEATURES PRODUCT SUMMARY V(BR)DSS www.DataSheet4U.net 75 (V) rDS(on) (W) 0.007 @ VGS = 10 V ID (A) 60a D TrenchFETr Power MOSFET Plus Temperature Sensing Diode D New Low Thermal Resistance Package APPLICATIONS D Automotive D Industrial D D2PAK-5L T1 G T2 1 2 3 4 5 D1 D2 S N-Channel MOSFET G D T1 S T2 ABSOLUTE MAXIMUM RATINGS (TC = 25_C UNLESS OTHERWISE NOTED) Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current (TJ = 175_C)d _ Pulsed Drain Current Continous Diode Current (Diode Conduction)d Avalanche Current Repetitive Avalanche Energyb Maximum Power Dissipationa Operating Junction and Storage Temperature Range L = 0.1 mH TC = 25_C TA = 25_C TC = 25_C TC = 100_C Symbol VDS VGS ID IDM IS IAR EAR PD TJ, Tstg Limit 75 "20 60a 60a 240 60a 60a 180 300c 3.75d –55 to 175 Unit V A mJ W _C THERMAL RESISTANCE RATINGS Parameter Junction-to-Ambientd Junction-to-Case Notes a. Package limited. b. Duty cycle v 1%. c. See SOA curve for voltage derating. d. When mounted on 1” square PCB (FR-4 material). Document Number: 71833 S-20174—Rev. A, 18-Mar-02 www.vishay.com PCB Mountd Symbol RthJA RthJC Limit 40 0.5 Unit _C/W _ 1 SUM60N08-07T Vishay Siliconix New Product MOSFET SPECIFICATIONS (TJ = 25_C UNLESS OTHERWISE NOTED) Parameter Static Drain-Source Breakdown Voltage Gate Threshold Voltage Gate-Body Leakage V(BR)DSS VGS(th) IGSS VGS = 0 V, ID = 250 mA VDS = VGS, IDS = 250 mA VDS = 0 V, VGS = "20 V VDS = 60 V, VGS = 0 V Zero Gate Voltage Drain Current IDSS VDS = 60 V, VGS = 0 V, TJ = 125_C VDS = 60 V, VGS = 0 V, TJ = 175_C On-State Drain Currenta ID(on) VDS = 5 V, VGS = 10 V VGS = 10 V, ID = 25 A Drain-Source On-State Resistancea rDS(on) VGS = 10 V, ID = 25 A, TJ = 125_C VGS = 10 V, ID = 25 A, TJ = 175_C VFD1 Sense Forward Voltage Sense Diode Forward Voltage Increase Forward Transconductancea VFD2 DVF gfs IF = 50 mA IF = 25 mA From IF = 25 mA to IF = 50 mA VDS = 15 V, ID = 20 A 710 640 40 100 120 0.0054 0.007 0.010 0.013 770 700 100 S mV W 75 2 4 "100 1 50 500 A m mA V nA Symbol Test Condition Min Typ Max Unit Dynamicb Input Capacitance Output Capacitance Reversen Transfer Capacitance Total Gate Chargec Gate-Source Chargec Gate-Drain Chargec Turn-On Delay Timec Rise Timec Turn-Off Delay Timec Fall Timec Ciss Coss Crss Qg Qgs Qgd td(on) tr td(off) tf VDD = 35 V, RL = 0.6 W ID ] 60 A, VGEN = 10 V, RG = 2.5 W VDS = 35 V, VGS = 10 V, ID = 60 A VGS = 0 V, VDS = 25 V, f = 1 MHz 6500 920 400 110 30 30 15 130 75 120 20 200 115 180 ns 150 nC pF Source-Drain Diode Ratings and Characteristics (TC = 25_C)b Continuous Current Pulsed Current Forward Voltagea Reverse Recovery Time Peak Reverse Recovery Current Reverse Recovery Charge Is ISM VSD trr IRM(REC) Qrr IF = 60 A, di/dt = 100 A/ms m IF = 60 A, VGS = 0 V 1.0 75 3.5 0.13 60 A 240 1.5 115 5 0.29 V ns A mC Notes: a. Pulse test; pulse width v 300 ms, duty cycle v 2%. b. Guaranteed by design, not subject to production testing. c. Independent of operating temperature. www.vishay.com 2 Document Number: 71833 S-20174—Rev. A, 18-Mar-02 SUM60N08-07T New Product TYPICAL CHARACTERISTICS (25_C UNLESS NOTED) Output Characteristics 250 VGS = 10 thru 6 V 200 I D – Drain Current (A) I D – Drain Current (A) 160 200 Vishay Siliconix Transfer Characteristics 150 120 100 5V 80 TC = 125_C 40 25_C –55_C 50 4V 0 0 2 4 6 8 10 0 0 1 2 3 4 5 6 VDS – Drain-to-Source Voltage (V) VGS – Gate-to-Source Voltage (V) Transconductance 250 TC = –55_C r DS(on) – On-Resistance ( W ) 200 g fs – Transconductance (S) 0.015 0.020 On-Resistance vs. Drain Current 150 25_C 125_C 0.010 VGS = 10 V 0.005 100 50 0 0 15 30 45 60 75 90 0.000 0 20 40 60 80 100 120 VGS – Gate-to-Source Voltage (V) ID – Drain Current (A) Capacitance 10000 Ciss 8000 C – Capacitance (pF) 20 Gate Charge V GS – Gate-to-Source Voltage (V) 16 VGS = 35 V ID = 60 A 6000 12 40...

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