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Part No. : 60NF06

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Product Information

INCHANGE Semiconductor www.DataSheet4U.com isc Product Specification isc N-Channel MOSFET Transistor 60NF06 FEATURES ·Drain Current –ID=60A@ TC=25℃ ·Drain Source Voltage: VDSS= 60V(Min) ·Static Drain-Source On-Resistance : RDS(on) = 0.016Ω(Max) ·Fast Switching DESCRIPTION Suitable as primary switch in advanced high-efficiency isolated DC-DC converters for Telecom and Computer application. It is also intended for any application with low gate charge drive requirements . APPLICATIONS ·High-efficiency DC-DC converters ·UPS and motor control ·Automotive ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL VDSS VGS ID IDM PD TJ Tstg PARAMETER Drain-Source Voltage Gate-Source Voltage-Continuous Drain Current-Continuous Drain Current-Single Pluse (tp≤10μs) Total Dissipation @TC=25℃ Max. Operating Junction Temperature Storage Temperature VALUE 60 ±20 60 240 110 175 -65~175 UNIT V V A A W ℃ ℃ THERMAL CHARACTERISTICS SYMBOL Rth j-c Rth j-a PARAMETER Thermal Resistance, Junction to Case Thermal Resistance, Junction to Ambient MAX 1.36 62.5 UNIT ℃/W ℃/W isc Website：www.iscsemi.cn INCHANGE Semiconductor www.DataSheet4U.com isc Product Specification isc N-Channel MOSFET Transistor ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN 60NF06 MAX UNIT V(BR)DSS Drain-Source Breakdown Voltage VGS= 0; ID= 0.25mA 60 V VGS(th) Gate Threshold Voltage VDS= VGS; ID= 0.25mA 2 4 V Ω RDS(on) IGSS Drain-Source On-Resistance VGS= 10V; ID= 30A VGS= ±20V;VDS= 0 VDS= 60V; VGS=0 VDS= 60V; VGS=0; Tj= 125℃ IS= 60A; VGS=0 0.016 ±100 1 10 1.3 Gate-Body Leakage Current nA μA IDSS Zero Gate Voltage Drain Current VSD Forward On-Voltage V · isc Website：www.iscsemi.cn ...

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