Maker : STMicroelectronics
Part No. : 74HC05

  Datasheet PDF : 74HC05.pdf
  Cross Reference : 74HC05 Cross Reference
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Product Information

M74HC05 HEX INVERTER (OPEN DRAIN) s s s s s HIGH SPEED: tPD = 10ns (TYP.) at VCC = 6V LOW POWER DISSIPATION: ICC = 1µA(MAX.) at TA=25°C HIGH NOISE IMMUNITY: VNIH = V NIL = 28 % VCC (MIN.) WIDE OPERATING VOLTAGE RANGE: VCC (OPR) = 2V to 6V PIN AND FUNCTION COMPATIBLE WITH 74 SERIES 05 DIP SOP TSSOP ORDER CODES PACKAGE TUBE M74HC05B1R M74HC05M1R T&R M74HC05RM13TR M74HC05TTR DIP SOP TSSOP DESCRIPTION The M74HC05 is an high speed CMOS HEX INVERTER (OPEN DRAIN) fabricated with silicon gate C2MOS technology. The internal circuit is composed of 3 stages including buffer output, which enables high noise immunity and stable output. All inputs are equipped with protection circuits against static discharge and transient excess voltage. PIN CONNECTION AND IEC LOGIC SYMBOLS July 2001 1/8 M74HC05 INPUT AND OUTPUT EQUIVALENT CIRCUIT PIN DESCRIPTION PIN No 1, 3, 5, 9, 11, 13 2, 4, 6, 8, 10, 12 7 14 SYMBOL 1A to 6A 1Y to 6Y GND VCC NAME AND FUNCTION Data Inputs Data Outputs Ground (0V) Positive Supply Voltage TRUTH TABLE A L H Z : High Impedance Y Z L ABSOLUTE MAXIMUM RATINGS Symbol VCC VI VO IIK IOK IO PD Tstg TL Supply Voltage DC Input Voltage DC Output Voltage DC Input Diode Current DC Output Diode Current DC Output Current Power Dissipation Storage Temperature Lead Temperature (10 sec) Parameter Value -0.5 to +7 -0.5 to VCC + 0.5 -0.5 to VCC + 0.5 ± 20 ± 20 ± 25 ± 50 500(*) -65 to +150 300 Unit V V V mA mA mA mA mW °C °C ICC or IGND DC VCC or Ground Current Absolute Maximum Ratings are those values beyond which damage to the device may occur. Functional operation under these conditions is not implied (*) 500mW at 65 °C; derate to 300mW by 10mW/°C from 65°C to 85°C RECOMMENDED OPERATING CONDITIONS Symbol VCC VI VO Top tr, tf Supply Voltage Input Voltage Output Voltage Operating Temperature Input Rise and Fall Time VCC = 2.0V VCC = 4.5V VCC = 6.0V Parameter Value 2 to 6 0 to VCC 0 to VCC -55 to 125 0 to 1000 0 to 500 0 to 400 Unit V V V °C ns ns ns 2/8 M74HC05 DC SPECIFICATIONS Test Condition Symbol Parameter VCC (V) 2.0 4.5 6.0 2.0 4.5 6.0 2.0 4.5 6.0 4.5 6.0 II IOZ ICC Input Leakage Current Output Leakage Current Quiescent Supply Current 6.0 6.0 6.0 IO=20 µA IO=20 µA IO=20 µA IO=4.0 mA IO=5.2 mA VI = VCC or GND VI = VIH or VIL VO = VCC or GND VI = VCC or GND TA = 25°C Min. 1.5 3.15 4.2 0.5 1.35 1.8 0.0 0.0 0.0 0.17 0.18 0.1 0.1 0.1 0.26 0.26 ± 0.1 ±0.5 1 Typ. Max. Value -40 to 85°C Min. 1.5 3.15 4.2 0.5 1.35 1.8 0.1 0.1 0.1 0.33 0.33 ±1 ±5 10 Max. -55 to 125°C Min. 1.5 3.15 4.2 0.5 1.35 1.8 0.1 0.1 0.1 0.40 0.40 ±1 ± 10 20 µA µA µA V Max. V Unit VIH High Level Input Voltage Low Level Input Voltage Low Level Output Voltage VIL V VOL AC ELECTRICAL CHARACTERISTICS (CL = 50 pF, Input tr = tf = 6ns) Test Condition Symbol Parameter VCC (V) 2.0 4.5 6.0 2.0 4.5 6.0 2.0 4.5 6.0 TA = 25°C Min. Typ. 30 8 7 20 11 10 33 9 8 Max. 75 15 13 90 18 15 90 18 15 Value -40 to 85°C Min. Max. 95 19 16 115 23 20 115 23 20 -55 to 125°C Min. Max. 110 22 19 135 27 23 135 27 23 ns Unit tTHL Output Transition Time Propagation Delay Time Propagation Delay Time tPLZ RL = 1 KΩ ns tPZL RL = 1 KΩ ns 3/8 M74HC05 CAPACITIVE CHARACTERISTICS Test Condition Symbol Parameter VCC (V) 5.0 5.0 5.0 TA = 25°C Min. Typ. 5 10 6.5 Max. 10 Value -40 to 85°C Min. Max. 10 -55 to 125°C Min. Max. 10 pF pF pF Unit CIN COUT CPD Input Capacitance Output Capacitance Power Dissipation Capacitance (note 1) 1) CPD is defined as the value of the IC’s internal equivalent capacitance which is calculated from the operating current consumption without load. (Refer to Test Circuit). Average operating current can be obtained by the following equation. ICC(opr) = CPD x VCC x fIN + ICC/6 (per gate) TEST CIRCUIT CL = 50pF or equivalent (includes jig and probe capacitance) RT = ZOUT of pulse generator (typically 50Ω) WAVEFORM : PROPAGATION DELAY TIMES (f=1MHz; 50% duty cycle) 4/8 M74HC05 Plastic DIP-14 MECHANICAL DATA mm...

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