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Fast Buffer AmplifierMaker : Elantec Semiconductor
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Product Information |
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www.datasheet4u.com ELH0033G 883 8001401ZX ELH0033G 883 8001401ZX Fast Buffer Amplifier Features Slew rate 1500 V ms Output drive 100 mA Rise and fall times 2 9 ns Input resistance 1011X Power bandwidth 100 MHz MIL-STD-883 devices 100% manufactured in U S A General Description The ELH0033 is a high-speed FET input voltage follower buffer designed to provide high output currents from DC to over 100 MHz The ELH0033 slews at 1500 V ms and will drive 100X loads Phase linearity is excellent to 20 MHz allowing the buffer to be included in op amp loops The ELH0033 is intended to fulfill a wide range of buffer applications such as high-speed line drivers video impedance transformation nuclear instrumentation amplifiers op amp isolation buffers for driving reactive loads and high impedance input buffers for high-speed A to D’s and comparators These devices are constructed using specially selected junction FETs and active laser trimming to achieve guaranteed performance specifications The ELH0033 is specified for operation from b 55 C to a 125 C Elantec facilities comply with MIL-I-45208A and other applicable quality specifications Elantec’s Military devices are 100% fabricated and assembled in our rigidly controlled ultra-clean facilities in Milpitas California For additional information on Elantec’s Quality and Reliability Assurance policy and procedures request brochure QRA-1 Advantages Excellent phase linearity Driver cables and other capacitive loads Wide supply range single or split Ordering Information Part No Temp Range Package Outline TO-8 MDP0002 ELH0033G 883B b 55 C to a 125 C 8001401ZX is the SMD version of this device Connection Diagram 12-Pin TO-8 Equivalent Schematic 0033 – 1 Top View Note Case is electrically isolated July 1992 Rev H 0033 – 2 Note All information contained in this data sheet has been carefully checked and is believed to be accurate as of the date of publication however this data sheet cannot be a ‘‘controlled document’’ Current revisions if any to these specifications are maintained at the factory and are available upon your request We recommend checking the revision level before finalization of your design documentation Patent pending 1989 Elantec Inc www.datasheet4u.com ELH0033G 883 8001401ZX Fast Buffer Amplifier Absolute Maximum Ratings VS VIN PD IOC IOP Supply Voltage (V a b Vb) Input Voltage Power Dissipation (See Curves) Continuous Output Current Peak Output Current 40V 40V 1 5W g 100 mA g 250 mA TA TJ TST Operating Temperature Range ELH0033 Operating Junction Temperature Storage Temperature Lead Temperature (Soldering 10 seconds) b 55 C to a 125 C 175 C b 65 C to a 150 C 300 C Important Note All parameters having Min Max specifications are guaranteed The Test Level column indicates the specific device testing actually performed during production and Quality inspection Elantec performs most electrical tests using modern high-speed automatic test equipment specifically the LTX77 Series system Unless otherwise noted all tests are pulsed tests therefore TJ e TC e TA Test Level I II III IV V Test Procedure 100% production tested and QA sample tested per QA test plan QCX0002 100% production tested at TA e 25 C and QA sample tested at TA e 25 C TMAX and TMIN per QA test plan QCX0002 QA sample tested per QA test plan QCX0002 Parameter is guaranteed (but not tested) by Design and Characterization Data Parameter is typical value at TA e 25 C for information purposes only DC Electrical Characteristics VS e g 15V Parameter VOS Description Output Offset Voltage Average Temperature Coefficient of Offset Voltage Input Bias Current VIN e 0V TMIN s TA s TMAX ELH0033 Test Level I I V 250 25 10 0 97 1010 1010 0 98 1011 1011 6 g 12 g9 Test Conditions RS s 100 kX TJ e 25 C (Note 1) RS s 100 kX Min Typ 5 Max 10 15 Units mV mV mV C pA nA nA V V X X X V TD is 3 4in V mA mW DVOS DT RS e 100X TJ e 25 C (Note 1) TA e 25 C (Note 2) TJ e TA e TMAX 50 IB I IV... |
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