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| datasheet.co.kr > datasheet > 9018 > Silicon NPN Epitaxial Transistor |
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Silicon NPN Epitaxial TransistorMaker : Shanghai SIM-BCD Semiconductor
Shortcut : 9012 9012H 9013 9014 9014 9014C 9015 9015FM 9016 901617 9017 9018 9018 |
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Product Information |
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9018 9018 Silicon NPN Epitaxial Transistor Description :The 9018 is designed for UHF general amplifier applications Features: ●Excellent hFE Linearity ●Excellent fT characteristic Chip Appearance Chip Size Chip Thickness Bonding Pad Size Front Metal Backside Metal Scribe line width Wafer Size Base Emitter 360um×360um 210±20um φ65um φ65um AlSiCu Au (As) 50um 6 inch Electrical Characteristics( Ta=25℃) Characteristic Collector Cutoff Current Emitter Cutoff Current Collector-Base Breakdown Voltage Collector-Emitter Breakdown Voltage Emitter-Base Breakdown Voltage DC Current Gain Collector Saturation Voltage Symbol ICBO IEBO BVCBO BVCEO BVEBO hFE VCE(sat) Test Condition VCB=20V, IE=0 VEB=3V, IC=0 IC=0.1mA IC=1mA IE=0.1mA VCE=5V, IC=1mA IC=10mA,IB=1mA 30 20 5 60 200 0.3 V Min Max 0.1 0.1 Unit uA uA V V V May.2004 Version :0.0 Page 1 of 1 ... |
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