Maker : Fairchild Semiconductor
Part No. : A1015

  Datasheet PDF : A1015.pdf
  Cross Reference : A1015 Cross Reference
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Product Information

KSA1015 KSA1015 LOW FREQUENCY AMPLIFIER • Collector-Base Voltage : VCBO= -50V • Complement to KSC1815 1 TO-92 1. Emitter 2. Collector 3. Base PNP Epitaxial Silicon Transistor Absolute Maximum Ratings Ta=25°C unless otherwise noted Symbol VCBO VCEO VEBO IC IB PC TJ TST9 Parameter Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current Base Current Collector Power Dissipation Junction Temperature Storage Temperature Ratings -50 -50 -5 -150 -50 400 125 -65 ~ 150 Units V V V mA mA mW °C °C Electrical Characteristics Ta=25°C unless otherwise noted Symbol BVCBO BVCEO BVEBO ICBO IEBO hFE1 hFE2 VCE (sat) VBE (sat) fT Cob NF Parameter Collector-Base Breakdown Voltage Collector-Emitter Breakdown Voltage Emitter-Base Breakdown Voltage Collector Cut-off Current Emitter Cut-off Current DC Current Gain Collector-Emitter Saturation Voltage Base-Emitter Saturation Voltage Current Gain Bandwidth Product Output Capacitance Noise Figure Test Condition IC= -100µA, IE=0 IC= -10mA, IB=0 IE= -10µA, IC=0 VCB= -50V, IE=0 VEB= -5V, IC=0 VCE= -6V, IC= -2mA VCE= -6V, IC= -150mA IC= -100mA, IB= -10mA IC= -100mA, IB= -10mA VCE= -10V, IC=-1mA VCB= -10V, IE=0, f=1MHz VCE= -6V, IC= -0.1mA f=100Hz, RG=10kΩ 80 4 0.5 7 6 70 25 -0.1 Min. -50 -50 -5 -0.1 -0.1 400 -0.3 -1.1 V V MHz pF dB Typ. Max. Units V V V µA µA hFE Classification Classification hFE1 O 70 ~ 140 Y 120 ~ 240 GR 200 ~ 400 ©2002 Fairchild Semiconductor Corporation Rev. A3, September 2002 KSA1015 Typical Characteristics -50 -45 1000 IC[mA], COLLECTOR CURRENT IB = -400µ A IB = -350µ A IB = -300µ A IB = -250µ A IB = -200µ A IB = -150µ A IB = -100µ A IB = -50µ A VCE = -6V -40 -35 -30 -25 -20 -15 -10 -5 0 0 -2 -4 -6 -8 hFE, DC CURRENT GAIN 100 10 -10 -12 -14 -16 -18 -20 1 -0.1 -1 -10 -100 VCE[V], COLLECTOR-EMITTER VOLTAGE IC[mA], COLLECTOR CURRENT Figure 1. Static Characteristic Figure 2. DC current Gain VBE(sat)[V], VCE(sat)[V], SATURATION VOLTAGE -10 -100 IC=10IB VCE =-6V -1 IC[mA], COLLECTOR CURRENT -1 -10 -100 VBE(sat) -10 -0.1 V CE(sat) -1 -0.01 -0.1 -0.1 -0.0 -0.2 -0.4 -0.6 -0.8 -1.0 -1.2 IC[mA], COLLECTOR CURRENT VBE (sat)[V], BASE-EMITTER VOLTAGE Figure 3. Base-Emitter Saturation Voltage Collector-Emitter Saturation Voltage Figure 4. Base-Emitter On Voltage 1000 f=1MHz IE =0 VCE=-6V Cob[pF], CAPACITANCE 10 hFE, DC CURRENT GAIN 1 -1 -10 -100 100 10 -1 -10 VCB[V], COLLECTOR-BASE VOLTAGE IC[mA], COLLECTOR CURRENT Figure 5. Collector Output Capacitance Figure 6. Current Gain Bandwidth Product ©2002 Fairchild Semiconductor Corporation Rev. A3, September 2002 KSA1015 Package Dimensions TO-92 4.58 –0.15 +0.25 0.46 14.47 ±0.40 ±0.10 4.58 ±0.20 1.27TYP [1.27 ±0.20] 3.60 ±0.20 1.27TYP [1.27 ±0.20] 0.38 –0.05 +0.10 3.86MAX 1.02 ±0.10 0.38 –0.05 +0.10 (R2.29) (0.25) Dimensions in Millimeters ©2002 Fairchild Semiconductor Corporation Rev. A3, September 2002 TRADEMARKS The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is not intended to be an exhaustive list of all such trademarks. ACEx™ FACT™ ActiveArray™ FACT Quiet series™ Bottomless™ FAST® FASTr™ CoolFET™ CROSSVOLT™ FRFET™ GlobalOptoisolator™ DOME™ EcoSPARK™ GTO™ E2CMOS™ HiSeC™ EnSigna™ I2C™ Across the board. Around the world.™ The Power Franchise™ Programmable Active Droop™ DISCLAIMER ImpliedDisconnect™ ISOPLANAR™ LittleFET™ MicroFET™ MicroPak™ MICROWIRE™ MSX™ MSXPro™ OCX™ OCXPro™ OPTOLOGIC® OPTOPLANAR™ PACMAN™ POP™ Power247™ PowerTrench® QFET™ QS™ QT Optoelectronics™ Quiet Series™ RapidConfigure™ RapidConnect™ SILENT SWITCHER® SMART START™ SPM™ Stealth™ SuperSOT™-3 SuperSOT™-6 SuperSOT™-8 SyncFET™ TinyLogic™ TruTranslation™ UHC™ UltraFET® VCX™ FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE ...

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