Maker : Jiangsu Changjiang
Part No. : A1015

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Product Information

JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO.,LTD TO-92 Plastic-Encapsulate Transistors A1015 TRANSISTOR (PNP) TO—92 1.EMITTER FEATURES Power dissipation MAXIMUM RATINGS* TA=25℃ unless otherwise noted Symbol VCBO VCEO VEBO IC PD TJ, Tstg Parameter Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current -Continuous Total Device Dissipation Junction and Storage Temperature Value -50 -50 -5 -150 400 -55-150 Units V V V mA mW ℃ 2.COLLECTOR 3.BASE 1 2 3 *These ratings are limiting values above which the serviceability of any semiconductor device may be impaired. ELECTRICAL CHARACTERISTICS（Tamb=25℃ Parameter Collector-base breakdown voltage Collector-emitter breakdown voltage Emitter-base breakdown voltage Collector cut-off current Collector cut-off current Emitter cut-off current DC current gain Collector-emitter saturation voltage Base-emitter saturation voltage Transition frequency Collector Output Capacitance Noise Figure Symbol V(BR)CBO V(BR)CEO V(BR)EBO ICBO ICEO IEBO hFE(1) VCE(sat) VBE(sat) fT Cob NF unless otherwise specified） MIN -50 -50 -5 TYP MAX UNIT V V V -0.1 -0.1 -0.1 70 400 -0.3 -1.1 80 19 6 V V MHz pF dB µA µA µA Test conditions Ic= -100µA, IE=0 Ic= -0. 1 mA, IB=0 IE= -100µA, IC=0 VCB= -50 V VCE= -50 V VEB= -5 V, IE=0 IB=0 IC=0 IC= -2mA VCE= -6 V, IC= -100mA, IB= -10 mA IC= -100 mA, IB= -10mA VCE= -10 V, IC= -1 mA f =30MHz VCB=-10V,IE=0 f=1MHZ VCE= -6 V, IC= -0.1 mA f =1KHz,RG=10K CLASSIFICATION Rank Range OF hFE(1) O 70-140 Y 120-240 GR 200-400 Typical Characteristics A1015 ...

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