Maker : Philips Semiconductors
Part No. : A1015

Datasheet PDF : A1015.pdf
Cross Reference : A1015 Cross Reference
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Product Information

DISCRETE SEMICONDUCTORS DATA SHEET book, halfpage M3D186 2PA1015 PNP general purpose transistor Product specification Supersedes data of 1997 May 01 1999 Apr 08 Philips Semiconductors Product specification PNP general purpose transistor FEATURES • Low current (max. 150 mA) • Low voltage (max. 50 V). APPLICATIONS • General purpose switching and amplification. DESCRIPTION PNP transistor in a plastic TO-92; SOT54 package. NPN complement: 2PC1815. 1 handbook, halfpage 2PA1015 PINNING PIN 1 2 3 base collector emitter DESCRIPTION 2 3 2 1 3 MAM285 Fig.1 Simplified outline (TO-92; SOT54) and symbol. LIMITING VALUES In accordance with the Absolute Maximum Rating System (IEC 134). SYMBOL VCBO VCEO VEBO IC ICM IBM Ptot Tstg Tj Tamb Note 1. Transistor mounted on an FR4 printed-circuit board. PARAMETER collector-base voltage collector-emitter voltage emitter-base voltage collector current (DC) peak collector current peak base current total power dissipation storage temperature junction temperature operating ambient temperature Tamb ≤ 25 °C; note 1 CONDITIONS open emitter open base open collector − − − − − − − −65 − −65 MIN. MAX. −50 −50 −5 −150 −200 −200 500 +150 150 +150 V V V mA mA mA mW °C °C °C UNIT 1999 Apr 08 2 Philips Semiconductors Product specification PNP general purpose transistor THERMAL CHARACTERISTICS SYMBOL Rth j-a Note 1. Transistor mounted on an FR4 printed-circuit board. CHARACTERISTICS Tj = 25 °C unless otherwise specified. SYMBOL ICBO IEBO hFE PARAMETER collector cut-off current emitter cut-off current DC current gain 2PA1015Y 2PA1015GR hFE VCEsat VBEsat Cc fT F DC current gain base-emitter saturation voltage collector capacitance transition frequency noise figure IC = −150 mA; VCE = −6 V IC = −100 mA; IB = −10 mA IE = ie = 0; VCB = −10 V; f = 1 MHz IC = −200 µA; VCE = −5 V; RS = 2 kΩ; f = 1 kHz; B = 200 Hz collector-emitter saturation voltage IC = −100 mA; IB = −10 mA CONDITIONS IE = 0; VCB = −50 V IC = 0; VEB = −5 V IC = −2 mA; VCE = −6 V 120 200 25 − − − − − − − − − 4 − − MIN. − − TYP. − − PARAMETER thermal resistance from junction to ambient note 1 CONDITIONS VALUE 250 2PA1015 UNIT K/W MAX. −100 −100 240 400 − −300 −1.1 7 − 10 UNIT nA nA mV V pF MHz dB IC = −1 mA; VCB = −10 V; f = 100 MHz 80 1999 Apr 08 3 Philips Semiconductors Product specification PNP general purpose transistor PACKAGE OUTLINE Plastic single-ended leaded (through hole) package; 3 leads 2PA1015 SOT54 c E d A L b 1 D 2 e1 e 3 b1 L1 0 2.5 scale 5 mm DIMENSIONS (mm are the original dimensions) UNIT mm A 5.2 5.0 b 0.48 0.40 b1 0.66 0.56 c 0.45 0.40 D 4.8 4.4 d 1.7 1.4 E 4.2 3.6 e 2.54 e1 1.27 L 14.5 12.7 L1(1) 2.5 Note 1. Terminal dimensions within this zone are uncontrolled to allow for flow of plastic and terminal irregularities. OUTLINE VERSION SOT54 REFERENCES IEC JEDEC TO-92 EIAJ SC-43 EUROPEAN PROJECTION ISSUE DATE 97-02-28 1999 Apr 08 4 Philips Semiconductors Product specification PNP general purpose transistor DEFINITIONS Data sheet status Objective specification Preliminary specification Product specification Limiting values 2PA1015 This data sheet contains target or goal specifications for product development. This data sheet contains preliminary data; supplementary data may be published later. This data sheet contains final product specifications. Limiting values given are in accordance with the Absolute Maximum Rating System (IEC 134). Stress above one or more of the limiting values may cause permanent damage to the device. These are stress ratings only and operation of the device at these or at any other conditions above those given in the Characteristics sections of the specification is not implied. Exposure to limiting values for extended periods may affect device reliability. Application information Where application information is given, it is advisory a...

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