Maker : Shanghai
Part No. : A1015

  Datasheet PDF : A1015.pdf
  Cross Reference : A1015 Cross Reference
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Product Information

A1015 A1015 Silicon PNP Epitaxial Transistor Description: The A1015 is designed for audio frequency general purpose amplifier applications and driver stage amplifier applications Features: ●Excellent hFE Linearity ●Complementary to C1815 Chip Appearance Chip Size Chip Thickness Bonding Pad Size Front Metal Backside Metal Scribe line width Wafer Size Base Emitter 350um×350um 210±20um 110um×110um 100um×100um Al Au(As) 40um 6 inch Electrical Characteristics( Ta=25℃) Characteristic Collector Cutoff Current Emitter Cutoff Current Collector-Base Breakdown Voltage Collector-Emitter Breakdown Voltage Emitter-Base Breakdown Voltage DC Current Gain Collector Saturation Voltage Symbol ICBO IEBO BVCBO BVCEO BVEBO hFE VCE(sat) Test Condition VCB=-60V, IE=0 VEB=-5V, IC=0 IC=-0.1mA, IC=-1mA, IE=-0.1mA, VCE=-6V, IC=-2mA IC=-100mA,IB=-10mA -60 -50 -5.0 150 600 -0.30 V Min Max -0.1 -0.1 Unit uA uA V V V May.2004 Version :0.0 Page 1 of 1 ...

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