Maker : AMIC Technology
Part No. : A616316

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A615308 Series Preliminary Document Title 32K X 8 BIT HIGH SPEED CMOS SRAM Revision History Rev. No. 0.0 32K X 8 BIT HIGH SPEED CMOS SRAM History Initial issue Issue Date January 17, 2001 Remark PRELIMINARY (January, 2001, Version 0.0) AMIC Technology, Inc. A615308 Series Preliminary Features n Single +5V power supply n Access times: 12 ns (max.) n Current: Operating: 150mA (max.) Standby: 12mA (max.) n Full static operation, no clock or refreshing required n n n n All inputs and outputs are directly TTL compatible Common I/O using three-state output Data retention voltage: 2V (min.) Available in 28-pin SOJ and TSOP packages 32K X 8 BIT HIGH SPEED CMOS SRAM General Description The A615308 is a high-speed 262,144-bit static random access memory organized as 32,768 words by 8 bits and operates on a single 5V power supply. It is built using high performance CMOS process. Inputs and three-state outputs are TTL compatible and allow for direct interfacing with common system bus structures. Minimum standby power is drawn by this device when CE is at a high level, independent of the other input levels. Data retention is guaranteed at a power supply voltage as low as 2V. Pin Configurations n SOJ n TSOP A14 A12 A7 A6 A5 A4 A3 A2 A1 A0 I/O0 I/O1 I/O2 GND 1 2 3 4 5 28 27 26 25 24 VCC WE ~ ~ A13 A8 A9 A11 OE A10 CE I/O 7 I/O 6 I/O 5 I/O 4 I/O 3 6 7 8 9 10 11 12 13 14 23 22 21 20 19 18 17 16 15 OE A11 A9 A8 A13 WE VCC A14 A12 A7 A6 A5 A4 A3 1 2 3 4 5 6 7 8 9 10 11 12 13 14 A615308V 28 27 26 25 24 23 22 21 20 19 18 17 16 15 A10 CE I/O 7 I/O 6 I/O 5 I/O 4 I/O 3 GND I/O 2 I/O 1 I/O 0 A0 A1 A2 A615308S PRELIMINARY (January, 2001, Version 0.0) 1 AMIC Technology, Inc. ~ ~ A615308 Series Block Diagram VCC GND A12 A13 A14 ROW DECODER 512 X 512 MEMORY ARRAY A0 I/O0 INPUT DATA CIRCUIT COLUMN I/O I/O7 CE OE WE CONTROL CIRCUIT Pin Description - SOJ Pin No. 1 - 10, 21, 23 - 26 11 - 13, 15 - 19 20 22 27 28 14 Symbol A0 - A14 I/O0 - I/O7 CE OE WE Pin Description - TSOP Description Address Inputs Data Inputs/Outputs 27 Chip Enable 1 Output Enable 6 Write Enable 7 Power Supply 21 GND Ground Ground CE OE WE Pin No. 2 - 5, 8 - 17, 28 18 - 20, 22 - 26 Symbol A0 - A14 I/O0 - I/O7 Description Address Inputs Data Inputs/Outputs Chip Enable Output Enable Write Enable Power Supply VCC VCC GND PRELIMINARY (January, 2001, Version 0.0) 2 AMIC Technology, Inc. A615308 Series Recommended DC Operating Conditions (TA = 0°C to + 70°C) Symbol VCC GND VIH VIL CL Parameter Supply Voltage Ground Input High Voltage Input Low (1) Voltage Output Load Min. 4.5 0 2.2 -0.5 Typ. 5.0 0 3.5 0 Max. 5.5 0 VCC + 0.5 +0.8 30 Unit V V V V pF Absolute Maximum Ratings* VCC to GND . . . . . . . . . . . . . . . . . . . . . . . . -0.5V to +7V IN, IN/OUT Volt to GND . . . . . . . . . . -0.5V to VCC +0.5V Operating Temperature, Topr . . . . . . . . . . . 0°C to +70°C Storage Temperature, Tstg . . . . . . . . . . -55°C to +125°C Temperature Under Bias, Tbias . . . . . . . . -10°C to +85°C Power Dissipation, PT . . . . . . . . . . . . . . . . . . . . . . . 1.0W *Comments Stresses above those listed under "Absolute Maximum Ratings" may cause permanent damage to this device. These are stress ratings only. Functional operation of this device at these or any other conditions above those indicated in the operational sections of this specification is not implied or intended. Exposure to the absolute maximum rating conditions for extended periods may affect device reliability. DC Electrical Characteristics Symbol Parameter (TA = 0°C to + 70°C, VCC = 5V ± 10%, GND = 0V) A615308-12 Min. Max. 2 2 150 µA µA mA VIN = GND to VCC CE = VIH or OE = VIH VI/O = GND to VCC CE = VIL, II/O = 0 mA Min. Cycle, Duty = 100% CE = VIH CE ≥ VCC - 0.2V VIN ≥ VCC -0.2V or VIN ≤ 0.2V Unit Conditions ILI ILO ICC1 (2) Input Leakage Output Leakage Dynamic Operating Current - ISB Standby Power Supply Current - 35 mA ISB1 - 12 mA VOL VOH ...

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