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1M X 16 Bit Low Voltage Super RAMMaker : AMIC Technology
Shortcut : A64S0616G-70 A64S0616G-70I |
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Product Information |
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A64S0616 Preliminary Document Title 1M X 16 Bit Low Voltage Super RAMTM Revision History Rev. No. 0.0 0.1 1M X 16 Bit Low Voltage Super RAMTM History Initial issue Add tASC, tAHC, tCEH, tWEH Issue Date November 30, 2001 July 31, 2002 Remark Preliminary PRELIMINARY (July, 2002, Version 0.1) AMIC Technology, Inc. A64S0616 Preliminary Features n Operating voltage: 2.7V to 3.1V n Access times: 70 ns (max.) n Current: A64S0616 series: Operating: 35mA (max.) Power Down Standby: 10µA (max.) n Fully SRAM compatible operation n Full static operation, no clock or refreshing required n All inputs and outputs are directly TTL-compatible n Common I/O using three-state output n Industrial operating temperature range: -25°C to +85°C for -I n Available in 48-ball Mini BGA (6X8) package. 1M X 16 Bit Low Voltage Super RAMTM General Description The A64S0616 is a low operating current 16,777,216-bit Super RAM organized as 1,048,576 words by 16 bits and operates on low power supply voltage from 2.7V to 3.1V. It is built using AMIC’s high performance CMOS DRAM process. Using hidden refresh technique, the A64S0616 provides a 100% compatible asynchronous interface. Inputs and three-state outputs are TTL compatible and allow for direct interfacing with common system bus structures. The chip enable input is provided for POWER-DOWN, device enable. Two byte enable inputs and an output enable input are included for easy interfacing. This A64S0616 is suited for low power application such as mobile phone and PDA or other battery-operated handheld device. Pin Configuration n Mini BGA (6X8) Top View 1 A B C D E F G H LB I/O8 I/O9 VSS VCC I/O14 I/O15 A18 2 OE 3 A0 A3 A5 A17 GND A14 A12 A9 4 A1 A4 A6 A7 A16 A15 A13 A10 5 A2 CE1 I/O1 I/O3 I/O4 I/O5 WE A11 6 CE2 I/O0 I/O2 VCC VSS I/O6 I/O7 NC HB I/O10 I/O11 I/O12 I/O13 A19 A8 A64S0616G PRELIMINARY (July, 2002, Version 0.1) 1 AMIC Technology, Inc. A64S0616 Block Diagram A0 16,777,216 MEMORY ARRAY VCC VSS GND DECODER A18 A19 I/O0 INPUT DATA CIRCUIT I/O7 COLUMN I/O INPUT DATA CIRCUIT I/O8 I/O15 CE1 CE2 LB HB OE WE CONTROL CIRCUIT Pin Description Symbol A0 - A19 CE1 CE2 I/O0 - I/O15 WE LB HB OE VCC VSS GND NC Address Inputs Chip Enable 1 Input Chip Enable 2 Input Data Input/Outputs Write Enable Input Byte Enable Input (I/O0 to I/O7) Byte Enable Input (I/O8 to I/O15) Output Enable Input Power Ground Ground No Connection Description PRELIMINARY (July, 2002, Version 0.1) 2 AMIC Technology, Inc. A64S0616 Recommended DC Operating Conditions (TA = 0°C to + 70°C or -25°C to 85°C) Symbol VCC VSS GND VIH VIL CL TTL Parameter Supply Voltage Ground Ground Input High Voltage Input Low Voltage Output Load Output Load Min. 2.7 0 0 2.4 -0.3 Max. 3.1 0 0 VCC + 0.3 +0.6 30 1 Unit V V V V V pF - Absolute Maximum Ratings* VCC to GND . . . . . . . . . . . . . . . . . . . . . -0.5V to +4.6V IN, IN/OUT Volt to GND . . . . . . . . -0.5V to VCC + 0.5V Storage Temperature, Tstg . . . . . . . . . -55°C to +125°C Power Dissipation, PT . . . . . . . . . . . . . . . . . . . . . 0.7W Soldering Temp. & Time . . . . . . . . . . . . 260°C, 10 sec *Comments Stresses above those listed under "Absolute Maximum Ratings" may cause permanent damage to this device. These are stress ratings only. Functional operation of this device at these or any other conditions above those indicated in the operational sections of this specification is not implied or intended. Exposure to the absolute maximum rating conditions for extended periods may affect device reliability. DC Electrical Characteristics Symbol Parameter (TA = 0°C to + 70°C or -25°C to 85°C, VCC = 2.7V to 3.1V, GND = 0V) -70 Min. Max. 1 Min. -85 Max. 1 µA VIN = GND to VCC CE1 = VIH or CE2 = VIL or OE = VIH or WE = VIL VI/O = GND to VCC Min. Cycle, Duty = 100% CE1 = VIL, CE2 = VIH II/O = 0mA CE1 = VIL, CE2 = VIH VIH = VCC, VIL = 0V, f = 1MHz, II/O = 0mA Unit Conditions ILI Input Leakage Current Output Leakage Current - ILO - 1 - 1... |
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