Maker : Panasonic
Part No. : A684

  Datasheet PDF : A684.pdf
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Product Information

Transistors www.DataSheet4U.com 2SA0683, 2SA0684 (2SA683, 2SA684) Silicon PNP epitaxial planar type Unit: mm ■ Features • Complementary pair with 2SC1383 and 2SC1384 • Allowing supply with the radial taping ■ Absolute Maximum Ratings Ta = 25°C Parameter Collector-base voltage (Emitter open) 2SA0683 2SA0684 VCEO VEBO IC ICP PC Tj Tstg Symbol VCBO Rating −30 −60 −25 −50 −5 −1 −1.5 1 150 −55 to +150 V A A W °C °C V 123 Unit V 0.45+0.2 –0.1 (1.27) (1.27) 0.45+0.2 –0.1 13.5±0.5 0.7+0.3 –0.2 0.7±0.1 8.6±0.2 For low-frequency power amplification and driver amplification Complementary to 2SC1383, 2SC1384 5.9±0.2 4.9±0.2 Emitter-base voltage (Collector open) Collector current Peak collector current Collector power dissipation Junction temperature Storage temperature 2.54±0.15 ■ Electrical Characteristics Ta = 25°C ± 3°C Parameter Collector-base voltage (Emitter open) Collector-emitter voltage (Base open) 2SA0683 2SA0684 2SA0683 2SA6084 VEBO ICBO hFE1 *2 hFE2 Collector-emitter saturation voltage Base-emitter saturation voltage Transition frequency Collector output capacitance (Common base, input open circuited) VCE(sat) VBE(sat) fT Cob IE = −10 µA, IC = 0 VCB = −20 V, IE = 0 VCE = −10 V, IC = −500 mA VCE = −5 V, IC = −1 A IC = −500 mA, IB = −50 mA IC = −500 mA, IB = −50 mA VCB = −10 V, IE = 50 mA, f = 200 MHz VCB = −10 V, IE = 0, f = 1 MHz 85 50 − 0.2 − 0.85 200 20 30 − 0.4 −1.2 V V MHz pF VCEO IC = −2 mA, IB = 0 Symbol VCBO Conditions IC = −10 µA, IE = 0 Min −30 −60 −25 −50 −5 − 0.1 340 V µA  V Typ Max Unit V Emitter-base voltage (Collector open) Collector-base cutoff current (Emitter open) Forward current transfer ratio *1 Note) 1. Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7030 measuring methods for transistors. 2. *1: Pulse measurement *2: Rank classification Rank hFE Q 85 to 170 R 120 to 240 S 170 to 340 Note) The part numbers in the parenthesis show conventional part number. Publication date: November 2002 SJC00001BED (3.2) Collector-emitter voltage 2SA0683 (Base open) 2SA0684 1: Emitter 2: Collector 3: Base EIAJ: SC-51 TO-92L-A1 Package 1 2SA0683, 2SA0684 www.DataSheet4U.com PC  Ta 1.2 −1.5 IC  VCE Ta = 25°C IB = −10 mA −9 mA −8 mA −7 mA −6 mA −5 mA −4 mA −3 mA −2 mA −1 mA −1.2 VCE = −10 V Ta = 25°C IC  I B Collector power dissipation PC (W) 1.0 −1.25 −1.0 0.8 −1.0 0.6 − 0.75 0.4 − 0.50 0.2 − 0.25 Collector current IC (mA) Collector current IC (A) − 0.8 − 0.6 − 0.4 − 0.2 0 0 0 20 40 60 80 100 120 140 160 0 −2 −4 −6 −8 −10 0 0 −2 −4 −6 −8 −10 −12 Ambient temperature Ta (°C) Collector-emitter voltage VCE (V) Base current IB (mA) VCE(sat)  IC Collector-emitter saturation voltage VCE(sat) (V) −100 VBE(sat)  IC −100 hFE  IC 600 VCE = −10 V Base-emitter saturation voltage VBE(sat) (V) IC / IB = 10 IC / IB = 10 −10 −10 Forward current transfer ratio hFE 500 400 Ta = 75°C 300 25°C 200 −25°C −1 Ta = 75°C 25°C −25°C −1 Ta = −25°C 75°C 25°C − 0.1 − 0.1 100 − 0.01 − 0.01 − 0.1 −1 −10 − 0.01 − 0.01 − 0.1 −1 −10 0 − 0.01 − 0.1 −1 −10 Collector current IC (A) Collector current IC (A) Collector current IC (A) fT  I E Collector output capacitance C (pF) (Common base, input open circuited) ob 200 180 VCB = −10 V Ta = 25°C Cob  VCB 50 45 40 35 30 25 20 15 10 5 0 −1 −10 −100 VCER  RBE Collector-emitter voltage (V) (Resistor between B and E) VCER IE = 0 f = 1 MHz Ta = 25°C −120 IC = −10 mA Ta = 25°C Transition frequency fT (MHz) 160 140 120 100 80 60 40 20 0 1 2 3 5 10 20 30 50 100 −100 −80 −60 2SA0684 −40 2SA0683 −20 0 0.1 1 10 100 Emitter current IE (mA) Collector-base voltage VCB (V) Base-emitter resistance RBE (kΩ) 2 SJC00001BED www.D...

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