Maker : Alpha & Omega Semiconductors
Part No. : AO3400A

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www.DataSheet4U.com AO3400A N-Channel Enhancement Mode Field Effect Transistor General Description The AO3400A uses advanced trench technology to provide excellent RDS(ON) and low gate charge. This device is suitable for use as a load switch or in PWM applications. Standard Product AO3400A is Pb-free (meets ROHS & Sony 259 specifications). Features Features VDS (V) ==30V VDS (V) 30V IDD==11A (VGS ==10V) I 5.7A (VGS 10V) RDS(ON) < 26.5mΩ (VGS = 10V) RDS(ON) < 14.5mΩ (VGS = 10V) RDS(ON) <<32mΩ (VGS ==4.5V) RDS(ON) 18mΩ (VGS 4.5V) RDS(ON) < 48mΩ (VGS = 2.5V) Rg,Ciss,Coss,Crss Tested TO-236 (SOT-23) Top View G D S G D S Absolute Maximum Ratings TA=25°C unless otherwise noted Symbol Parameter VDS Drain-Source Voltage VGS Gate-Source Voltage Continuous Drain Current AF Pulsed Drain Current B TA=25°C Power Dissipation TA=70°C Junction and Storage Temperature Range Thermal Characteristics Parameter Maximum Junction-to-Ambient A Maximum Junction-to-Ambient A Maximum Junction-to-Lead C TA=25°C TA=70°C ID IDM PD TJ, TSTG Maximum 30 ±12 5.7 4.7 25 1.4 0.9 -55 to 150 Units V V A A W °C Symbol t ≤ 10s Steady-State Steady-State RθJA RθJL Typ 70 100 63 Max 90 125 80 Units °C/W °C/W °C/W Alpha & Omega Semiconductor, Ltd. www.aosmd.com AO3400A Electrical Characteristics (TJ=25°C unless otherwise noted) Symbol Parameter Conditions ID=250uA, VGS=0V VDS=30V, VGS=0V TJ=125°C VDS=0V, VGS= ±12V VDS=VGS ID=250µA VGS=4.5V, VDS=5V VGS=10V, ID=5.7A RDS(ON) Static Drain-Source On-Resistance TJ=125°C VGS=4.5V, ID=5A VGS=2.5V, ID=3A gFS VSD IS Forward Transconductance VDS=5V, ID=5.7A Diode Forward Voltage IS=1A,VGS=0V Maximum Body-Diode Continuous Current 0.7 25 22 31 25.4 34 26 0.72 1.0 2.0 900 VGS=0V, VDS=15V, f=1MHz VGS=0V, VDS=0V, f=1MHz 88 65 0.95 10 VGS=4.5V, VDS=15V, ID=5.7A 1.8 3.75 3.2 VGS=10V, VDS=15V, RL=2.6Ω, RGEN=3Ω IF=5.7A, dI/dt=100A/us 3.5 21.5 2.7 16.8 8 20 1.5 13 1100 26.5 38 32 48 S V A pF pF pF Ω nC nC nC ns ns ns ns ns nC mΩ 1 Min 30 1 5 100 1.5 Typ Max Units V uA nA V A STATIC PARAMETERS BVDSS Drain-Source Breakdown Voltage IDSS IGSS VGS(th) ID(ON) Zero Gate Voltage Drain Current Gate-Body leakage current Gate Threshold Voltage On state drain current DYNAMIC PARAMETERS Ciss Input Capacitance Coss Crss Rg Output Capacitance Reverse Transfer Capacitance Gate resistance SWITCHING PARAMETERS Qg Total Gate Charge Qgs Gate Source Charge Qgd tD(on) tr tD(off) tf trr Qrr Gate Drain Charge Turn-On DelayTime Turn-On Rise Time Turn-Off DelayTime Turn-Off Fall Time Body Diode Reverse Recovery Time Body Diode Reverse Recovery Charge IF=5.7A, dI/dt=100A/us A: The value of R θJA is measured with the device mounted on 1in 2 FR-4 board with 2oz. Copper, in a still air environment with T A=25°C. The value in any given application depends on the user's specific board design. B: Repetitive rating, pulse width limited by junction temperature T J(MAX)=150°C. 8.5 C. The RθJA is the sum of the thermal impedence from junction to lead R θJL and lead to ambient. 0.0 D. The static characteristics in Figures 1 to 6 are obtained using <300 us pulses, duty cycle 0.5% max. 40 A E. These tests are performed with the device mounted on 1 in 2 FR-4 board with 2oz. Copper, in a still air environment with T A=25°C. The SOA #DIV/0! curve provides a single pulse rating. F: The current rating is based on the t ≤ 10s thermal resistance rating. Rev0: Apr. 2007 THIS PRODUCT HAS BEEN DESIGNED AND QUALIFIED FOR THE CONSUMER MARKET. APPLICATIONS OR USES AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISING OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN, FUNCTIONS AND RELIABILITY WITHOUT NOTICE. Alpha & Omega Semiconductor, Ltd. www.aosmd.com AO3400A TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS 40 35 30 25 ID (A) 20 15 10 5 0 0 1 2 VGS=2V 2.5V ID(A) 10V 4.5V 3V 20 VDS=5V 16 12 0.7 8 125°C ...

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