Maker : Alpha & Omega Semiconductors
Part No. : AO3401

Datasheet PDF : AO3401.pdf
Cross Reference : AO3401 Cross Reference
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Shortcut : AO3400  AO3400A  AO3401  AO3401A  AO3402  AO3402L  AO3403  AO3404  AO3405  AO3406  AO3407  AO3409 

Product Information

www.DataSheet4U.com AO3401 P-Channel Enhancement Mode Field Effect Transistor General Description The AO3401 uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as 2.5V. This device is suitable for use as a load switch or in PWM applications. Standard product AO3401 is Pb-free (meets ROHS & Sony 259 specifications). AO3401L is a Green Product ordering option. AO3401 and AO3401L are electrically identical. Features VDS (V) = -30V ID = -4.2 A (VGS = -10V) RDS(ON) < 50mΩ (VGS = -10V) RDS(ON) < 65mΩ (VGS = -4.5V) RDS(ON) < 120mΩ (VGS = -2.5V) TO-236 (SOT-23) Top View G D S G D S Absolute Maximum Ratings TA=25°C unless otherwise noted Parameter Symbol VDS Drain-Source Voltage VGS Gate-Source Voltage Continuous Drain Current A Pulsed Drain Current B TA=25°C Power Dissipation A TA=70°C Junction and Storage Temperature Range Thermal Characteristics Parameter Maximum Junction-to-Ambient Maximum Junction-to-Ambient C Maximum Junction-to-Lead TA=25°C TA=70°C ID IDM PD TJ, TSTG Maximum -30 ±12 -4.2 -3.5 -30 1.4 1 -55 to 150 Units V V A W °C Symbol A A t ≤ 10s Steady-State Steady-State RθJA RθJL Typ 65 85 43 Max 90 125 60 Units °C/W °C/W °C/W Alpha & Omega Semiconductor, Ltd. AO3401 Electrical Characteristics (TJ=25°C unless otherwise noted) Parameter Symbol STATIC PARAMETERS BVDSS Drain-Source Breakdown Voltage IDSS IGSS VGS(th) ID(ON) RDS(ON) Zero Gate Voltage Drain Current Gate-Body leakage current Gate Threshold Voltage On state drain current Conditions ID=-250µA, VGS=0V VDS=-24V, VGS=0V TJ=55°C VDS=0V, VGS=±12V VDS=VGS ID=-250µA VGS=-4.5V, VDS=-5V VGS=-10V, ID=-4.2A Static Drain-Source On-Resistance TJ=125°C VGS=-4.5V, ID=-4A 7 53 80 11 -0.75 -0.7 -25 42 50 75 65 120 -1 -2.2 954 115 77 6 9.4 2 3 6.3 3.2 38.2 12 20.2 11.2 -1 Min -30 -1 -5 ±100 -1.3 Typ Max Units V µA nA V A mΩ mΩ mΩ S V A pF pF pF Ω nC nC nC ns ns ns ns ns nC gFS VSD IS VGS=-2.5V, ID=-1A Forward Transconductance VDS=-5V, ID=-5A Diode Forward Voltage IS=-1A,VGS=0V Maximum Body-Diode Continuous Current DYNAMIC PARAMETERS Ciss Input Capacitance Coss Output Capacitance Crss Reverse Transfer Capacitance Rg Gate resistance SWITCHING PARAMETERS Qg Total Gate Charge Qgs Gate Source Charge Qgd Gate Drain Charge tD(on) Turn-On DelayTime tr tD(off) tf trr Qrr Turn-On Rise Time Turn-Off DelayTime Turn-Off Fall Time VGS=0V, VDS=-15V, f=1MHz VGS=0V, VDS=0V, f=1MHz VGS=-4.5V, VDS=-15V, ID=-4A VGS=-10V, VDS=-15V, RL=3.6Ω, RGEN=6Ω IF=-4A, dI/dt=100A/µs Body Diode Reverse Recovery Time Body Diode Reverse Recovery Charge IF=-4A, dI/dt=100A/µs A: The value of R θJA is measured with the device mounted on 1in2 FR-4 board with 2oz. Copper, in a still air environment with TA =25°C. The value in any given application depends on the user's specific board design. The current rating is based on the t ≤ 10s thermal resistance rating. B: Repetitive rating, pulse width limited by junction temperature. C. The R θJA is the sum of the thermal impedence from junction to lead RθJL and lead to ambient. D. The static characteristics in Figures 1 to 6,12,14 are obtained using 80 µs pulses, duty cycle 0.5% max. 2 E. These tests are performed with the device mounted on 1 in FR-4 board with 2oz. Copper, in a still air environment with TA=25°C. The SOA curve provides a single pulse rating. THIS PRODUCT HAS BEEN DESIGNED AND QUALIFIED FOR THE CONSUMER MARKET. APPLICATIONS OR USES AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISING OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN, FUNCTIONS AND RELIABILITY WITHOUT NOTICE. Alpha & Omega Semiconductor, Ltd. AO3401 TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS 25.00 -10V 20.00 15.00 10.00 5.00 0.00 0.00 -2.5V -4.5V -3V -ID (A) -ID(A) 6 4 2 0 1.00 2.00 3.00 4.00 5.00 0 0.5 1 1.5 2 2.5 3 -VDS (Volts) Fig 1: O...

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