Maker : Alpha & Omega Semiconductors
Part No. : AO3406

  Datasheet PDF : AO3406.pdf
  Cross Reference : AO3406 Cross Reference
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Shortcut : AO3400  AO3400A  AO3401  AO3401A  AO3402  AO3402L  AO3403  AO3404  AO3405  AO3406  AO3407  AO3409 

Product Information

www.DataSheet4U.com AO3406 N-Channel Enhancement Mode Field Effect Transistor General Description The AO3406 uses advanced trench technology to provide excellent RDS(ON) and low gate charge. This device is suitable for use as a load switch or in PWM applications. Standard Product AO3406 is Pb-free (meets ROHS & Sony 259 specifications). AO3406L is a Green Product ordering option. AO3406 and AO3406L are electrically identical. Features VDS (V) = 30V ID = 3.6A (VGS = 10V) RDS(ON) < 65mΩ (VGS = 10V) RDS(ON) < 105mΩ (VGS = 4.5V) TO-236 (SOT-23) Top View G D S G D S Absolute Maximum Ratings TA=25°C unless otherwise noted Parameter Symbol VDS Drain-Source Voltage VGS Gate-Source Voltage Continuous Drain Current A Pulsed Drain Current Power Dissipation A B Maximum 30 ±20 3.6 2.9 15 1.4 0.9 -55 to 150 Units V V A TA=25°C TA=70°C TA=25°C TA=70°C ID IDM PD TJ, TSTG W °C Junction and Storage Temperature Range Thermal Characteristics Parameter Maximum Junction-to-Ambient A Maximum Junction-to-Ambient A Maximum Junction-to-Lead C Symbol t ≤ 10s Steady-State Steady-State RθJA RθJL Typ 70 100 63 Max 90 125 80 Units °C/W °C/W °C/W Alpha & Omega Semiconductor, Ltd. AO3406 Electrical Characteristics (TJ=25°C unless otherwise noted) Symbol Parameter Conditions ID=250µA, VGS=0V VDS=24V, VGS=0V TJ=55°C VDS=0V, VGS=±20V VDS=VGS ID=250µA VGS=10V, VDS=5V VGS=10V, ID=3.6A RDS(ON) gFS VSD IS Static Drain-Source On-Resistance VGS=4.5V, ID=2.8A Forward Transconductance VDS=5V, ID=3.6A Diode Forward Voltage IS=1A Maximum Body-Diode Continuous Current TJ=125°C 1 15 50 74 75 7 0.79 1 2.5 288 VGS=0V, VDS=15V, f=1MHz VGS=0V, VDS=0V, f=1MHz 57 39 3 6.5 VGS=10V, VDS=15V, ID=3.6A 3.1 1.2 1.6 4.6 VGS=10V, VDS=15V, RL=2.2Ω, RGEN=3Ω IF=3.6A, dI/dt=100A/µs 2 Min 30 Typ Max Units V STATIC PARAMETERS BVDSS Drain-Source Breakdown Voltage IDSS IGSS VGS(th) ID(ON) Zero Gate Voltage Drain Current Gate-Body leakage current Gate Threshold Voltage On state drain current 1 5 100 1.9 3 65 100 105 µA nA V A mΩ mΩ S V A pF pF pF DYNAMIC PARAMETERS Ciss Input Capacitance Coss Crss Rg Output Capacitance Reverse Transfer Capacitance Gate resistance 375 6 8.5 4 Ω nC nC nC nC ns ns ns ns SWITCHING PARAMETERS Qg(10V) Total Gate Charge Qg(4.5V) Total Gate Charge Qgs Qgd tD(on) tr tD(off) tf trr Qrr Gate Source Charge Gate Drain Charge Turn-On DelayTime Turn-On Rise Time Turn-Off DelayTime Turn-Off Fall Time Body Diode Reverse Recovery Time 1.9 20.1 2.6 10.2 3.5 14 Body Diode Reverse Recovery Charge IF=3.6A, dI/dt=100A/µs ns nC A: The value of R θJA is measured with the device mounted on 1in FR-4 board with 2oz. Copper, in a still air environment with TA =25°C. The value in any given application depends on the user's specific board design. The current rating is based on the t≤ 10s thermal resistance rating. B: Repetitive rating, pulse width limited by junction temperature. C. The R θJA is the sum of the thermal impedence from junction to lead RθJL and lead to ambient. D. The static characteristics in Figures 1 to 6,12,14 are obtained using 80 µs pulses, duty cycle 0.5% max. 2 E. These tests are performed with the device mounted on 1 in FR-4 board with 2oz. Copper, in a still air environment with TA=25°C. The SOA curve provides a single pulse rating. Rev 5 : July 2005 THIS PRODUCT HAS BEEN DESIGNED AND QUALIFIED FOR THE CONSUMER MARKET. APPLICATIONS OR USES AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISING OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN, FUNCTIONS AND RELIABILITY WITHOUT NOTICE. Alpha and Omega Semiconductor, Ltd. AO3406 TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS 15 12 6V 9 ID (A) 6 3 0 0 1 2 3 4 5 VDS (Volts) Fig 1: On-Region Characteristics 100 90 RDS(ON) (mΩ) 80 70 60 50 40 0 2 4 6 8 10 ID (A) Figure 3: On-Resistance vs. Drain Current and Gate Voltage 200 ID=3.6A ...

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