|
Free integrated circuits, diodes, triacs, and other semiconductors Datasheet Search and Download Site
| datasheet.co.kr > datasheet > AO3407 > P-Channel Enhancement Mode Field Effect Transistor |
|
|
P-Channel Enhancement Mode Field Effect TransistorMaker : ETC
Shortcut : AO3400 AO3400A AO3401 AO3401A AO3402 AO3402L AO3403 AO3404 AO3405 AO3406 AO3407 AO3409 |
|
Product Information |
|
Aug 2002 AO3407 P-Channel Enhancement Mode Field Effect Transistor General Description The AO3407 uses advanced trench technology to provide excellent RDS(ON) with low gate charge. This device is suitable for use as a load switch or in PWM applications. Features VDS (V) = -30V ID = -4.1 A RDS(ON) < 52mΩ (VGS = -10V) RDS(ON) < 87mΩ (VGS = -4.5V) TO-236 (SOT-23) Top View G D S G D S Absolute Maximum Ratings TA=25°C unless otherwise noted Parameter Symbol VDS Drain-Source Voltage VGS Gate-Source Voltage Continuous Drain Current A Pulsed Drain Current Power Dissipation A B Maximum -30 ±20 -4.1 -3.5 -20 1.4 1 -55 to 150 Units V V A TA=25°C TA=70°C TA=25°C TA=70°C ID IDM PD TJ, TSTG W °C Junction and Storage Temperature Range Thermal Characteristics Parameter Maximum Junction-to-Ambient A Maximum Junction-to-Ambient A Maximum Junction-to-Lead C Symbol t ≤ 10s Steady-State Steady-State RθJA RθJL Typ 65 85 43 Max 90 125 60 Units °C/W °C/W °C/W Alpha & Omega Semiconductor, Ltd. AO3407 Electrical Characteristics (TJ=25°C unless otherwise noted) Symbol Parameter STATIC PARAMETERS BVDSS Drain-Source Breakdown Voltage IDSS IGSS VGS(th) ID(ON) RDS(ON) gFS VSD IS Zero Gate Voltage Drain Current Gate-Body leakage current Gate Threshold Voltage On state drain current Static Drain-Source On-Resistance VGS=-4.5V, ID=-3A Forward Transconductance VDS=-5V, ID=-4A Diode Forward Voltage IS=-1A,VGS=0V Maximum Body-Diode Continuous Current Conditions ID=-250µA, VGS=0V VDS=-24V, VGS=0V TJ=55°C VDS=0V, VGS=±20V VDS=VGS ID=-250µA VGS=-4.5V, VDS=-5V VGS=-10V, ID=-4.1A TJ=125°C 5.5 -1 -10 40.5 57 64 8.2 -0.77 52 73 87 -1 -2.2 700 VGS=0V, VDS=-15V, f=1MHz VGS=0V, VDS=0V, f=1MHz 120 75 10 14.3 VGS=-4.5V, VDS=-15V, ID=-4A 7 3.1 3 8.6 5 28.2 13.5 27 15 -1.8 Min -30 -1 -5 ±100 -3 Typ Max Units V µA nA V A mΩ mΩ S V A pF pF pF Ω nC nC nC nC ns ns ns ns ns nC DYNAMIC PARAMETERS Ciss Input Capacitance Coss Output Capacitance Crss Rg Reverse Transfer Capacitance Gate resistance SWITCHING PARAMETERS Qg Total Gate Charge (10V) Qg Total Gate Charge (4.5V) Qgs Gate Source Charge Qgd Gate Drain Charge tD(on) tr tD(off) tf trr Qrr Turn-On DelayTime Turn-On Rise Time Turn-Off DelayTime Turn-Off Fall Time Body Diode Reverse Recovery Time VGS=-10V, VDS=-15V, RL=3.6Ω, RGEN=3Ω IF=-4A, dI/dt=100A/µs Body Diode Reverse Recovery Charge IF=-4A, dI/dt=100A/µs A: The value of R θJA is measured with the device mounted on 1in2 FR-4 board with 2oz. Copper, in a still air environment with TA =25°C. The value in any a given application depends on the user's specific board design. The current rating is based on the t ≤ 10s thermal resistance rating. B: Repetitive rating, pulse width limited by junction temperature. C. The R θJA is the sum of the thermal impedence from junction to lead RθJL and lead to ambient. D. The static characteristics in Figures 1 to 6,12,14 are obtained using 80 µs pulses, duty cycle 0.5% max. 2 E. These tests are performed with the device mounted on 1 in FR-4 board with 2oz. Copper, in a still air environment with TA=25°C. The SOA curve provides a single pulse rating. Alpha & Omega Semiconductor, Ltd. AO3407 TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS 20 -10V 15 10 -5V -4.5V -4V 6 10 -3.5V -ID(A) 4 2 0 1.00 2.00 3.00 4.00 5.00 0 1 2 3 4 -VDS (Volts) Figure 1: On-Region Characteristics 100 Normalized On-Resistance 1.6 VGS=-4.5V 1.4 VGS=-10V -VGS(Volts) Figure 2: Transfer Characteristics 8 VDS=-5V -ID (A) 125°C 5 VGS=-3V 25°C 0 0.00 80 RDS(ON) (mΩ) VGS=-4.5V 60 VGS=-10V 40 1.2 1 ID=-2A 20 0 2 4 6 8 10 -ID (A) Figure 3: On-Resistance vs. Drain Current and Gate Voltage 160 140 120 RDS(ON) (mΩ) -IS (A) 100 80 60 40 20 2 4 6 8 10 -VGS (Volts) Figure 5: On-Resistance vs. Gate-Source Voltage 25°C 125°C ID=-2A 0.8 0 25 50 75 100 125 150 175 Temperature (°C) Figure 4: On-Resistance vs. Junction Temperature 1E+01 1E+00 1E-01 1E-02 1E-03 1E-04 1E-05 1E-06 0.0 0.2 0.4 0.6 0.8 1.0 1.2... |
|
Link URL |
| http://www.datasheet.co.kr/datasheet-html/A/O/3/AO3407_ETC.pdf.html |
|
Since 2010 - jixjix@gmail.com -
MOSFET -
TTL -
LINEAR VOLTAGE REGULATOR |