Maker : Alpha & Omega Semiconductors
Part No. : AO4617

  Datasheet PDF : AO4617.pdf
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Product Information

www.DataSheet4U.com AO4617 Complementary Enhancement Mode Field Effect Transistor General Description The AO4617 uses advanced trench technology MOSFETs to provide excellen RDS(ON) and low gate charge. The complementary MOSFETs may be used in H-bridge, Inverters and other applications. Standard Product AO4617 is Pb-free (meets ROHS & Sony 259 specifications). AO4617L is a Green Product ordering option. AO4617 and AO4617L are electrically identical. Features n-channel VDS (V) = 40V ID = 6A (VGS=10V) RDS(ON) < 32mΩ (VGS=10V) < 45mΩ (VGS=4.5V) p-channel -40V -5A (VGS = -10V) RDS(ON) < 48mΩ (VGS = -10V) < 75mΩ (VGS = -4.5V) ESD rating: 3000V (HBM) UIS TESTED! Rg,Ciss,Coss,Crss Tested D2 D1 S2 G2 S1 G1 1 2 3 4 8 7 6 5 D2 D2 D1 D1 G2 G1 SOIC-8 n-channel S2 S1 p-channel Max p-channel -40 ±20 -5 -4 -25 2 1.28 17 43 -55 to 150 W A mJ °C A Units V V Absolute Maximum Ratings T =25°C unless otherwise noted A Parameter Symbol Max n-channel VDS Drain-Source Voltage 40 VGS Gate-Source Voltage ±20 Continuous Drain Current A Pulsed Drain Current Power Dissipation B Avalanche Current B TA=25°C TA=70°C TA=25°C TA=70°C B 6 ID IDM PD IAR EAR TJ, TSTG 5 30 2 1.28 13 25 -55 to 150 Repetitive avalanche energy 0.3mH Junction and Storage Temperature Range Thermal Characteristics: n-channel and p-channel Parameter t ≤ 10s Maximum Junction-to-AmbientA A Steady-State Maximum Junction-to-Ambient C Steady-State Maximum Junction-to-Lead A t ≤ 10s Maximum Junction-to-Ambient A Steady-State Maximum Junction-to-Ambient C Steady-State Maximum Junction-to-Lead Symbol RθJA RθJL RθJA RθJL Device n-ch n-ch n-ch p-ch p-ch p-ch Typ 48 74 35 48 74 35 Max 62.5 110 50 Units °C/W °C/W °C/W 62.5 °C/W 110 °C/W 50 °C/W Alpha & Omega Semiconductor, Ltd. AO4617 N Channel Electrical Characteristics (T J=25°C unless otherwise noted) Symbol Parameter Conditions ID=250µA, VGS=0V VDS=32V, VGS=0V TJ=55°C VDS=0V, VGS= ±20V VDS=VGS ID=250µA VGS=10V, VDS=5V VGS=10V, I D=6A RDS(ON) gFS VSD IS Static Drain-Source On-Resistance VGS=4.5V, I D=5A Forward Transconductance VDS=5V, ID=6A IS=1A,VGS=0V Diode Forward Voltage Maximum Body-Diode Continuous Current TJ=125°C 1 30 26 39 36 18 0.76 1 3 506 VGS=0V, VDS=20V, f=1MHz VGS=0V, VDS=0V, f=1MHz 106 38 2.6 8.4 VGS=10V, VDS=20V, I D=6A 4.1 1.6 2.7 4.8 VGS=10V, VDS=20V, RL=3.3Ω, RGEN=3Ω IF=6A, dI/dt=100A/µs IF=6A, dI/dt=100A/µs 2 17 2.1 17.4 10.9 3.9 32 48 45 2.2 Min 40 1 5 ±1 3 Typ Max Units V µA mA V A mΩ mΩ S V A pF pF pF Ω nC nC nC nC ns ns ns ns ns nC STATIC PARAMETERS BVDSS Drain-Source Breakdown Voltage IDSS IGSS VGS(th) ID(ON) Zero Gate Voltage Drain Current Gate-Body leakage current Gate Threshold Voltage On state drain current DYNAMIC PARAMETERS Ciss Input Capacitance Coss Crss Rg Output Capacitance Reverse Transfer Capacitance Gate resistance SWITCHING PARAMETERS Qg(10V) Total Gate Charge Qg(4.5V) Total Gate Charge Qgs Qgd tD(on) tr tD(off) tf trr Qrr Gate Source Charge Gate Drain Charge Turn-On DelayTime Turn-On Rise Time Turn-Off DelayTime Turn-Off Fall Time Body Diode Reverse Recovery Time Body Diode Reverse Recovery Charge A: The value of R θJA is measured with the device mounted on 1in2 FR-4 board with 2oz. Copper, in a still air environment with TA=25°C. The value in any given application depends on the user's specific board design. The current rating is based on the t≤ 10s thermal resistance rating. B: Repetitive rating, pulse width limited by junction temperature. C. The R θJA is the sum of the thermal impedence from junction to lead RθJL and lead to ambient. D. The static characteristics in Figures 1 to 6 are obtained using <300µs pulses, duty cycle 0.5% max. E. These tests are performed with the device mounted on 1 in2 FR-4 board with 2oz. Copper, in a still air environment with TA=25°C. The SOA curve provides a single pulse rating. Rev 0 : October 2006 THIS PRODUCT HAS BEEN DESIGNED AND QUALIFIED FOR THE CONSUMER MARKET. APPLICATIONS OR...

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