Maker : Panasonic Semiconductor
Part No. : B1063

  Datasheet PDF : B1063.pdf
  Cross Reference : B1063 Cross Reference
  Buy Component : B1063 Find Stock and Price

Shortcut : B1063 

Product Information

www.DataSheet4U.com Power Transistors 2SB1063 Silicon PNP triple diffusion planar type For high power amplification Complementary to 2SD1499 ■ Features • Extremely satisfactory linearity of the forward current transfer ratio hFE • Wide safe operation area • High transition frequency fT • Full-pack package which can be installed to the heat sink with one screw 16.7±0.3 Unit: mm 0.7±0.1 10.0±0.2 5.5±0.2 4.2±0.2 4.2±0.2 2.7±0.2 7.5±0.2 φ 3.1±0.1 Solder Dip (4.0) 1.4±0.1 1.3±0.2 0.5+0.2 –0.1 14.0±0.5 0.8±0.1 ■ Absolute Maximum Ratings TC = 25°C Parameter Collector-base voltage (Emitter open) Collector-emitter voltage (Base open) Emitter-base voltage (Collector open) Collector current Peak collector current Collector power dissipation Ta = 25°C Junction temperature Storage temperature Tj Tstg Symbol VCBO VCEO VEBO IC ICP PC Rating −100 −100 −5 −5 −8 40 2.0 150 −55 to +150 °C °C Unit V V V A A W 2.54±0.3 5.08±0.5 1 2 3 1: Base 2: Collector 3: Emitter EIAJ: SC-67 TO-220F-A1 Package ■ Electrical Characteristics TC = 25°C ± 3°C Parameter Base-emitter voltage Collector-base cutoff current (Emitter open) Emitter-base cutoff current (Collector open) Forward current transfer ratio Symbol VBE ICBO IEBO hFE1 hFE2 * hFE3 Collector-emitter saturation voltage Transition frequency Collector output capacitance (Common base, input open circuited) VCE(sat) fT Cob Conditions VCE = −5 V, IC = −3 A VCB = −100 V, IE = 0 VEB = −3 V, IC = 0 VCE = −5 V, IC = −20 mA VCE = −5 V, IC = −1 A VCE = −5 V, IC = −3 A IC = −3 A, IB = − 0.3 A VCE = −5 V, IC = − 0.5 A, f = 1 MHz VCB = −10 V, IE = 0, f = 1 MHz 20 170 20 40 20 −2 V MHz pF 200 Min Typ Max −1.8 −50 −50 Unit V µA µA  Note) 1. Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7030 measuring methods for transistors. 2. *: Rank classification Rank hFE2 R 40 to 80 Q 60 to 120 P 100 to 200 Publication date: February 2003 SJD00039AED 1 www.DataSheet4U.com 2SB1063 PC  Ta 80 (1)TC=Ta (2)With a 100×100×2mm Al heat sink (3)Without heat sink (PC=2.0W) IC  VCE −6 IB=–80mA TC=25˚C IC  VBE −6 25˚C TC=100˚C –25˚C VCE=–5V Collector power dissipation PC (W) −5 –70mA –60mA –50mA –40mA −5 Collector current IC (A) −4 Collector current IC (A) 60 −4 40 (1) −3 –30mA –20mA –10mA −3 −2 −2 20 (2) (3) 0 0 40 80 120 160 −1 –5mA −1 0 0 −2 −4 −6 −8 −10 −12 0 0 − 0.4 − 0.8 −1.2 −1.6 −2.0 Ambient temperature Ta (°C) Collector-emitter voltage VCE (V) Base-emitter voltage VBE (V) VCE(sat)  IC Collector-emitter saturation voltage VCE(sat) (V) −100 IC/IB=10 hFE  IC 104 VCE=–5V fT  I C 1 000 VCE=–5V f=1MHz TC=25˚C Forward current transfer ratio hFE −10 103 TC=100˚C 25˚C Transition frequency fT (MHz) −1 −10 100 −1 TC=100˚C 25˚C –25˚C 102 –25˚C 10 − 0.1 10 1 − 0.01 − 0.01 − 0.1 −1 −10 1 − 0.01 − 0.1 0.1 − 0.01 − 0.1 −1 −10 Collector current IC (A) Collector current IC (A) Collector current IC (A) Safe operation area −100 Non repetitive pulse TC=25˚C Rth  t 102 (1)Without heat sink (2)With a 100×100×2mm Al heat sink (1) Thermal resistance Rth (°C/W) Collector current IC (A) −10 ICP IC t=1ms DC t=10ms 10 (2) −1 1 − 0.1 10−1 − 0.01 −1 −10 −100 −1 000 10−2 10−3 10−2 10−1 1 10 102 103 104 Collector-emitter voltage VCE (V) Time t (s) 2 SJD00039AED www.DataSheet4U.com Request for your special attention and precautions in using the technical information and semiconductors described in this material (1) An export permit needs to be obtained from the competent authorities of the Japanese Government if any of the products or technologies described in this material and controlled under the "Foreign Exchange and Foreign Trade Law" is to be exported or taken ...

Link URL