Maker : ROHM Electronics
Part No. : B1240

  Datasheet PDF : B1240.pdf
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Product Information

www.DataSheet4U.com 2SB1188 / 2SB1182 / 2SB1240 Transistors Medium power transistor (−32V, −2A) 2SB1188 / 2SB1182 / 2SB1240 !Features 1) Low VCE(sat). VCE(sat) = −0.5V (Typ.) (IC/IB = −2A / −0.2A) 2) Complements the 2SD1766 / 2SD1758 / 2SD1862 !External dimensions (Units : mm) 2SB1188 0.5±0.1 2SB1182 1.5±0.3 4.5 +0.2 −0.1 1.6±0.1 1.5 +0.2 −0.1 6.5±0.2 5.1+0.2 −0.1 C0.5 2.3 +0.2 −0.1 0.5±0.1 9.5±0.5 2.5 +0.2 −0.1 4.0±0.3 5.5+0.3 −0.1 0.9 1.5 (1) 1.0±0.2 (2) (3) 0.4±0.1 1.5±0.1 0.4 +0.1 −0.05 0.75 0.9 0.65±0.1 !Structure Epitaxial planar type PNP silicon transistor 0.4±0.1 1.5±0.1 0.5±0.1 3.0±0.2 0.55±0.1 2.3±0.2 2.3±0.2 1.0±0.2 ROHM : MPT3 EIAJ : SC-62 (1) Base (2) Collector (3) Emitter (1) (2) (3) ROHM : CPT3 EIAJ : SC-63 (1) Base (2) Collector (3) Emitter Abbreviated symbol: BC∗ 2SB1240 6.8±0.2 2.5±0.2 0.65Max. 1.0 0.5±0.1 (1) (2) (3) 2.54 2.54 1.05 14.5±0.5 4.4±0.2 0.9 0.45±0.1 ROHM : ATV ∗ Denotes hFE (1) Emitter (2) Collector (3) Base !Absolute maximum ratings (Ta=25°C) Parameter Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Symbol VCBO VCEO VEBO IC Limits −40 −32 −5 −2 −3 0.5 PC 2 10 1 Tj Tstg 150 −55~+150 Unit V V V A(DC) A(Pulse) ∗1 W W ∗2 2SB1188 Collector power dissipation 2SB1182 2SB1240 Junction temperature Storage temperature W(TC=25°C) W °C °C ∗3 ∗1 Single pulse, PW=100ms ∗2 When mounted on a 40×40×0.7 mm ceramic board. ∗3 Printed circuit board, 1.7mm thick, collector copper plating 100mm2 or larger. 2.5 www.DataSheet4U.com 2SB1188 / 2SB1182 / 2SB1240 Transistors !Electrical characteristics (Ta=25°C) Parameter Collector-base breakdown voltage Collector-emitter breakdown voltage Emitter-base breakdown voltage Collector cutoff current Emitter cutoff current Collector-emitter saturation voltage DC current transfer ratio Transition frequency Output capacitance ∗ Measured using pulse current. Symbol BVCBO BVCEO BVEBO ICBO IEBO VCE(sat) hFE fT Cob Min. −40 −32 −5 − − − 82 − − Typ. − − − − − −0.5 − 100 50 Max. − − − −1 −1 −0.8 390 − − Unit V V V µA µA V − MHz pF IC=−50µA IC=−1mA IE=−50µA VCB=−20V VEB=−4V Conditions IC/IB=−2A/−0.2A VCE=−3V, IC=−0.5A VCE=−5V, IE=0.5A, f=30MHz VCB=−10V, IE=0A, f=1MHz ∗ ∗ !Packaging specifications and hFE Package Code Type 2SB1188 2SB1182 2SB1240 hFE PQR PQR PQR − − − Basic ordering unit (pieces) T100 1000 Taping TL 2500 − TV2 2500 − − hFE values are classified as follows : Item hFE P 82~180 Q 120~270 R 180~390 !Electrical characteristic curves VCE=−3V COLLECTOR CURRENT : IC (mA) −0.5 Ta=25°C −1.75mA DC CURRENT GAIN : hFE −1000 Ta=100°C 25°C −500 −40°C −200 −100 −50 −20 −10 −5 −2 −1 COLLECTOR CURRENT : IC (A) −2.5mA −2.25mA 500 VCE=−6V −3V −1V Ta=25°C −0.4 −2mA −1.5mA −1.25mA −1mA −750µA −500µA 200 −0.3 100 −0.2 50 −0.1 −250µA 0 −0.2 −0.4 −0.6 −0.8 −1.0 −1.2 −1.4 −1.6 −1.8 −2.0 −2.2 BASE TO EMITTER VOLTAGE : VBE (V) 0 0 −0.4 −0.8 −1.2 IB=0A −1.6 −2 20 −5 −10 −20 −50 −100 −200 −500 −1000 −2000 COLLECTOR TO EMITTER VOLTAGE : VCE (V) COLLECTOR CURRENT : IC (mA) Fig.1 Grounded emitter propagation characteristics Fig.2 Grounded emitter output characteristics Fig.3 DC current gain vs. collector current ( Ι ) www.DataSheet4U.com 2SB1188 / 2SB1182 / 2SB1240 Transistors COLLECTOR SATURATION VOLTAGE : VCE(sat) (mV) 500 DC CURRENT GAIN : hFE VCE=−3V Ta=100°C 25°C −25°C COLLECTOR SATURATION VOLTAGE : VCE(sat) (mV) −500 Ta=25°C −500 lC/lB=10 200 −200 −200 −100 −50 100 −100 IC/IB=50 Ta=100°C 25°C −40°C 50 −50 20 10 −5 −10 −20 −50 −100 −200 −500 −1000 −2000 −20 −5 −10 −20 −50 −100 −200 −500 −1000 −2000 ...

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