Maker : Sanyo Semiconductor Corporation
Part No. : B892

  Datasheet PDF : B892.pdf
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Product Information

www.DataSheet4U.com Ordering number:930C PNP/NPN Epitaxial Planar Silicon Darlington Transistors 2SB892/2SD1207 Large-Current Switching Applications Features · Power supplies, relay drivers, lamp drivers, and automotive wiring. Package Dimensions unit:mm 2006A [2SB892/2SD1207] Features · FBET and MBIT processed (Original process of SANYO). · Low saturation voltage. · Large current capacity and wide ASO. ( ) : 2SB892 EIAJ : SC-51 SANYO : MP Specifications Absolute Maximum Ratings at Ta = 25˚C Parameter Collector-to-Base Voltage Collector-to-Emitter Voltage Emitter-to-Base Voltage Collector Current Collector Current (Pulse) Allowable Collector Dissipation Junction Temperature Storage Temperature Symbol VCBO VCEO VEBO IC ICP PC Tj Tstg Conditions B : Base C : Collector E : Emitter Ratings (–)60 (–)50 (–)6 (–)2 (–)4 1 150 –55 to +150 Unit V V V A A W ˚C ˚C Electrical Characteristics at Ta = 25˚C Parameter Collector Cutoff Current Emitter Cutoff Current DC Current Gain Gain-Bandwidth Product Output Capacitance Symbol ICBO IEBO hFE1 hFE2 fT Cob VCB=(–)50V, IE=0 VEB=(–)4V, IC=0 VCE=(–)2V, IC=(–)100mA VCE=(–)2V, IC=(–)1.5A VCE=(–)10V, IC=(–)50mA VCB=(–)10V, f=1MHz 100 40 150 12 (22) MHz pF pF Conditions Ratings min typ max (–)0.1 (–)0.1 560 Unit µA µA * : The 2SB892/2SD1207 are graded as follows by hFE at 100mA : 100 R 200 140 S 280 200 T 400 280 U 560 Any and all SANYO products described or contained herein do not have specifications that can handle applications that require extremely high levels of reliability, such as life-support systems, aircraft’s control systems, or other applications whose failure can be reasonably expected to result in serious physical and/or material damage. Consult with your SANYO representative nearest you before using any SANYO products described or contained herein in such applications. SANYO assumes no responsibility for equipment failures that result from using products at values that exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges,or other parameters) listed in products specifications of any and all SANYO products described or contained herein. SANYO Electric Co.,Ltd. Semiconductor Bussiness Headquaters TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN 91098HA (KT)/4067KI/3145KI No.930–1/4 w w w . D a t a S h e e t 4 U . c o m 2SB892/2SD1207 Parameter Collector-to-Emitter Saturation Voltage Base-to-Emitter Saturation Voltage Collector-to-Base Breakdown Voltage Collector-to-Emitter Breakdown Voltage Emitter-to-Base Breakdown Voltage Symbol VCE(sat) VBE(sat) Conditions IC=(–)1A, IB=(–)50mA Ratings min typ 0.15 (–0.3) IC=(–)1A, IB=(–)50mA V(BR)CBO IC=(–)10µA, IE=0 V(BR)CEO IC=(–)1mA, RBE=∞ V(BR)EBO IE=(–)10µA, IC=0 (–)0.9 (–)60 (–)50 (–)6 max 0.4 (–0.7) (–)1.2 Unit V V V V V V No.930–2/4 www.DataSheet4U.com 2SB892/2SD1207 No.930–3/4 www.DataSheet4U.com 2SB892/2SD1207 Specifications of any and all SANYO products described or contained herein stipulate the performance, characteristics, and functions of the described products in the independent state, and are not guarantees of the performance, characteristics, and functions of the described products as mounted in the customer’s products or equipment. To verify symptoms and states that cannot be evaluated in an independent device, the customer should always evaluate and test devices mounted in the customer’s products or equipment. SANYO Electric Co., Ltd. strives to supply high-quality high-reliability products. However, any and all semiconductor products fail with some probability. It is possible that these probabilistic failures could give rise to accidents or events that could endanger human lives, that could give rise to smoke or fire, or that could cause damage to other property. When designing equipment, adopt safety measures so that these kinds of acci...

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