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Part No. : BB132

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Product Information

DISCRETE SEMICONDUCTORS DATA SHEET alfpage M3D049 BB132 VHF variable capacitance diode Product specification Supersedes data of 1996 May 03 1998 Sep 15 Philips Semiconductors Product specification VHF variable capacitance diode FEATURES • High linearity • Excellent matching to 1% DMA • Very small plastic SMD package • C28: 2.5 pF; ratio: 26. APPLICATIONS • Electronic tuning in VHF television tuners, band A up to 160 MHz • VCO. DESCRIPTION The BB132 is a variable capacitance diode fabricated in planar technology, and encapsulated in the SOD323 very small plastic SMD package. The excellent matching performance is achieved by gliding matching and a direct matching assembly procedure. ELECTRICAL CHARACTERISTICS Tj = 25 °C unless otherwise specified. SYMBOL IR rs Cd PARAMETER reverse current diode series resistance diode capacitance capacitance ratio CONDITIONS VR = 30 V; see Fig.3 VR = 30 V; Tj = 85 °C; see Fig.3 f = 100 MHz; note 1 VR = 0.5 V; f = 1 MHz; see Figs 2 and 4 VR = 28 V; f = 1 MHz; see Figs 2 and 4 C d ( 0.5V ) --------------------C d ( 28V ) ∆C d --------Cd f = 1 MHz − − − 60 2.3 24 MIN. MAX. 10 200 2 75 2.75 30 Marking code: P2. Cathode side indicated by a bar. MAM130 BB132 handbook, 4 columns k a Fig.1 Simplified outline (SOD323) and symbol. LIMITING VALUES In accordance with the Absolute Maximum Rating System (IEC 134). SYMBOL VR IF Tstg Tj PARAMETER continuous reverse voltage continuous forward current storage temperature operating junction temperature − − −55 −55 MIN. MAX. 30 20 +150 +125 V mA °C °C UNIT UNIT nA nA Ω pF pF capacitance matching VR = 0.5 to 28 V; in a sequence of 4 diodes (gliding) − 1 2 % % VR = 0.5 to 28 V; in a sequence of 15 diodes − (gliding) Note 1. VR is the value at which Cd = 30 pF. 1998 Sep 15 2 Philips Semiconductors Product specification VHF variable capacitance diode GRAPHICAL DATA BB132 MBC778 handbook, full pagewidth 75 Cd (pF) 50 25 0 10 −1 f = 1 MHz; Tj = 25 °C. 1 10 VR (V) 10 2 Fig.2 Diode capacitance as a function of reverse voltage; typical values. 10 3 handbook, halfpage MLC816 10 3 handbook, halfpage MLC815 IR (nA) TC d (K−1) 102 10 4 10 0 50 T j ( C) o 100 10 5 10 1 1 10 VR (V) 102 Tj = 0 to 85 °C. Fig.4 Fig.3 Reverse current as a function of junction temperature; maximum values. Temperature coefficient of diode capacitance as a function of reverse voltage; typical values. 1998 Sep 15 3 Philips Semiconductors Product specification VHF variable capacitance diode PACKAGE OUTLINE Plastic surface mounted package; 2 leads BB132 SOD323 A A1 E bp DIMENSIONS (mm are the original dimensions) UNIT mm A 1.1 0.8 A1 max. + 0.05 − 0.05 bp 0.40 0.25 c D 0.25 0.10 Note 1. The marking bar indicates the cathode. OUTLINE VERSION SOD323  
,   Lp HE D 1 2 (1) Q c v M A A 0 1 2 mm scale E HE Lp Q v 0.2 1.8 1.6 1.35 1.15 2.7 2.3 0.45 0.15 0.25 0.15 REFERENCES IEC JEDEC EIAJ EUROPEAN PROJECTION ISSUE DATE 98-09-14 1998 Sep 15 4 Philips Semiconductors Product specification VHF variable capacitance diode DEFINITIONS Data sheet status Objective specification Preliminary specification Product specification Limiting values BB132 This data sheet contains target or goal specifications for product development. This data sheet contains preliminary data; supplementary data may be published later. This data sheet contains final product specifications. Limiting values given are in accordance with the Absolute Maximum Rating System (IEC 134). Stress above one or more of the limiting values may cause permanent damage to the device. These are stress ratings only and operation of the device at these or at any other conditions above those given in the Characteristics sections of the specification is not implied. Exposure to limiting values for extended periods may affect device reliability. Application information Where application information is g...

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