Maker : Motorola Inc
Part No. : BC550C

Datasheet PDF : BC550C.pdf
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MOTOROLA SEMICONDUCTOR TECHNICAL DATA Low Noise Transistors Order this document by BC549B/D NPN Silicon COLLECTOR 1 2 BASE 3 EMITTER BC549B,C BC550B,C MAXIMUM RATINGS Rating Collector – Emitter Voltage Collector – Base Voltage Emitter – Base Voltage Collector Current — Continuous Total Device Dissipation @ TA = 25°C Derate above 25°C Total Device Dissipation @ TC = 25°C Derate above 25°C Operating and Storage Junction Temperature Range Symbol VCEO VCBO VEBO IC PD PD TJ, Tstg BC549 30 30 5.0 100 625 5.0 1.5 12 – 55 to +150 BC550 45 50 Unit Vdc Vdc Vdc mAdc mW mW/°C Watt mW/°C °C 1 2 3 CASE 29–04, STYLE 17 TO–92 (TO–226AA) THERMAL CHARACTERISTICS Characteristic Thermal Resistance, Junction to Ambient Thermal Resistance, Junction to Case Symbol RqJA RqJC Max 200 83.3 Unit °C/W °C/W ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted) Characteristic Symbol Min Typ Max Unit OFF CHARACTERISTICS Collector – Emitter Breakdown Voltage (IC = 10 mAdc, IB = 0) Collector – Base Breakdown Voltage (IC = 10 µAdc, IE = 0) Emitter – Base Breakdown Voltage (IE = 10 mAdc, IC = 0) Collector Cutoff Current (VCB = 30 V, IE = 0) (VCB = 30 V, IE = 0, TA = +125°C) Emitter Cutoff Current (VEB = 4.0 Vdc, IC = 0) V(BR)CEO BC549B,C BC550B,C V(BR)CBO BC549B,C BC550B,C V(BR)EBO ICBO — — IEBO — — — — 15 5.0 15 nAdc µAdc nAdc 30 50 5.0 — — — — — — Vdc 30 45 — — — — Vdc Vdc Motorola Small–Signal Transistors, FETs and Diodes Device Data © Motorola, Inc. 1996 1 BC549B,C BC550B,C ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted) (Continued) Characteristic Symbol Min Typ Max Unit ON CHARACTERISTICS DC Current Gain (IC = 10 µAdc, VCE = 5.0 Vdc) (IC = 2.0 mAdc, VCE = 5.0 Vdc) Collector – Emitter Saturation Voltage (IC = 10 mAdc, IB = 0.5 mAdc) (IC = 10 mAdc, IB = see note 1) (IC = 100 mAdc, IB = 5.0 mAdc, see note 2) Base–Emitter Saturation Voltage (IC = 100 mAdc, IB = 5.0 mAdc) Base–Emitter On Voltage (IC = 10 µAdc, VCE = 5.0 Vdc) (IC = 100 µAdc, VCE = 5.0 Vdc) (IC = 2.0 mAdc, VCE = 5.0 Vdc) hFE BC549B/550B BC549C/550C BC549B/550B BC549C/550C VCE(sat) — — — VBE(sat) VBE(on) — — 0.55 0.52 0.55 0.62 — — 0.7 — 0.075 0.3 0.25 1.1 0.25 0.6 0.6 — Vdc Vdc 100 100 200 420 150 270 290 500 — — 450 800 Vdc — SMALL–SIGNAL CHARACTERISTICS Current – Gain — Bandwidth Product (IC = 10 mAdc, VCE = 5.0 Vdc, f = 100 MHz) Collector–Base Capacitance (VCB = 10 Vdc, IE = 0, f = 1.0 MHz) Small–Signal Current Gain (IC = 2.0 mAdc, VCE = 5.0 V, f = 1.0 kHz) BC549B/BC550B BC549C/BC550C NF1 NF2 fT Ccbo hfe 240 450 — — 330 600 0.6 — 500 900 dB 2.5 10 — — 250 2.5 — — MHz pF — Noise Figure (IC = 200 µAdc, VCE = 5.0 Vdc, RS = 2.0 kΩ, f = 1.0 kHz) (IC = 200 µAdc, VCE = 5.0 Vdc, RS = 100 kΩ, f = 1.0 kHz) NOTES: 1. IB is value for which IC = 11 mA at VCE = 1.0 V. 2. Pulse test = 300 µs – Duty cycle = 2%. RS in en IDEAL TRANSISTOR Figure 1. Transistor Noise Model 2 Motorola Small–Signal Transistors, FETs and Diodes Device Data BC549B,C BC550B,C 2.0 hFE, NORMALIZED DC CURRENT GAIN 1.5 1.0 0.8 0.6 0.4 0.3 0.2 0.2 VCE = 10 V TA = 25°C V, VOLTAGE (VOLTS) 1.0 0.9 0.8 0.7 0.6 0.5 0.4 0.3 0.2 0.1 0.5 1.0 2.0 5.0 10 20 50 IC, COLLECTOR CURRENT (mAdc) 100 200 0 0.1 0.2 VCE(sat) @ IC/IB = 10 0.5 1.0 2.0 5.0 10 20 IC, COLLECTOR CURRENT (mAdc) 50 100 TA = 25°C VBE(sat) @ IC/IB = 10 VBE(on) @ VCE = 10 V Figure 2. Normalized DC Current Gain f T, CURRENT–GAIN — BANDWIDTH PRODUCT (MHz) Figure 3. “Saturation” and “On” Voltages 400 300 200 C, CAPACITANCE (pF) 10 7.0 5.0 Cib TA = 25°C 100 80 60 40 30 20 VCE = 10 V TA = 25°C 3.0 Cob 2.0 0.5 0.7 1.0 2.0 5.0 7.0 10 20 IC, COLLECTOR CURRENT (mAdc) 50 1.0 0.4 0.6 1.0 2.0 4.0 10 VR, REVERSE VOLTAGE (VOLTS) 20 40 Figure 4. Current–Gain — Bandwidth Product Figure 5. Capacitance r b, BASE SPREADING RESISTANCE (OHMS) 170 160 150 VCE = 10 V f = 1.0 kHz TA ...

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