Maker : Philips Semiconductors
Part No. : BC556B

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DISCRETE SEMICONDUCTORS DATA SHEET book, halfpage M3D186 BC556; BC557 PNP general purpose transistors Product specification Supersedes data of 1997 Mar 27 1999 Apr 15 Philips Semiconductors Product specification PNP general purpose transistors FEATURES • Low current (max. 100 mA) • Low voltage (max. 65 V). APPLICATIONS • General purpose switching and amplification. DESCRIPTION PNP transistor in a TO-92; SOT54 plastic package. NPN complements: BC546 and BC547. PINNING PIN 1 2 3 emitter base collector BC556; BC557 DESCRIPTION 1 handbook, halfpage 2 3 3 2 1 MAM281 Fig.1 Simplified outline (TO-92; SOT54) and symbol. LIMITING VALUES In accordance with the Absolute Maximum Rating System (IEC 134). SYMBOL VCBO BC556 BC557 VCEO collector-emitter voltage BC556 BC557 VEBO IC ICM IBM Ptot Tstg Tj Tamb emitter-base voltage collector current (DC) peak collector current peak base current total power dissipation storage temperature junction temperature operating ambient temperature Tamb ≤ 25 °C open collector open base − − − − − − − −65 − −65 −65 −45 −5 −100 −200 −200 500 +150 150 +150 V V V mA mA mA mW °C °C °C PARAMETER collector-base voltage CONDITIONS open emitter − − −80 −50 V V MIN. MAX. UNIT 1999 Apr 15 2 Philips Semiconductors Product specification PNP general purpose transistors THERMAL CHARACTERISTICS SYMBOL Rth j-a Note 1. Transistor mounted on an FR4 printed-circuit board. CHARACTERISTICS Tj = 25 °C unless otherwise specified. SYMBOL ICBO IEBO hFE PARAMETER collector cut-off current emitter cut-off current DC current gain BC556 BC557 BC556A BC556B; BC557B BC557C VCEsat VBEsat VBE Cc Ce fT F Notes 1. VBEsat decreases by about −1.7 mV/K with increasing temperature. 2. VBE decreases by about −2 mV/K with increasing temperature. collector-emitter saturation voltage base-emitter saturation voltage base-emitter voltage collector capacitance emitter capacitance transition frequency noise figure IC = −10 mA; IB = −0.5 mA IC = −100 mA; IB = −5 mA IC = −10 mA; IB = −0.5 mA; note 1 IC = −100 mA; IB = −5 mA; note 1 IC = −2 mA; VCE = −5 V; note 2 IC = −10 mA; VCE = −5 V; note 2 IE = ie = 0; VCB = −10 V; f = 1 MHz IC = ic = 0; VEB = −0.5 V; f = 1 MHz IC = −200 µA; VCE = −5 V; RS = 2 kΩ; f = 1 kHz; B = 200 Hz CONDITIONS IE = 0; VCB = −30 V IE = 0; VCB = −30 V; Tj = 150 °C IC = 0; VEB = −5 V IC = −2 mA; VCE = −5 V; see Figs 2, 3 and 4 PARAMETER thermal resistance from junction to ambient CONDITIONS note 1 BC556; BC557 VALUE 250 UNIT K/W MIN. − − − 125 125 125 220 420 − − − − −600 − − − − TYP. −1 − − − − − − − −60 −180 −750 −930 −650 − 3 10 − 2 MAX. UNIT −15 −4 −100 475 800 250 475 800 −300 −650 − − −750 −820 − − − 10 mV mV mV mV mV mV pF pF MHz dB nA µA nA IC = −10 mA; VCE = −5 V; f = 100 MHz 100 1999 Apr 15 3 Philips Semiconductors Product specification PNP general purpose transistors BC556; BC557 handbook, full pagewidth 300 MBH726 hFE 200 VCE = −5 V 100 0 −10−1 −1 −10 −102 IC (mA) −103 BC556A. Fig.2 DC current gain; typical values. handbook, full pagewidth 400 MBH727 hFE VCE = −5 V 300 200 100 0 −10−2 −10−1 −1 −10 −102 IC (mA) −103 BC556B; BC557B. Fig.3 DC current gain; typical values. 1999 Apr 15 4 Philips Semiconductors Product specification PNP general purpose transistors BC556; BC557 handbook, full pagewidth 600 MBH728 hFE 500 VCE = −5 V 400 300 200 100 0 −10−2 −10−1 −1 −10 −102 IC (mA) −103 BC557C. Fig.4 DC current gain; typical values. 1999 Apr 15 5 Philips Semiconductors Product specification PNP general purpose transistors PACKAGE OUTLINE Plastic single-ended leaded (through hole) package; 3 leads BC556; BC557 SOT54 c E d A L b 1 D 2 e1 e 3 b1 L1 0 2.5 scale 5 mm DIMENSIONS (mm are the original...

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