Maker : Motorola Inc
Part No. : BC556

  Datasheet PDF : BC556.pdf
  Cross Reference : BC556 Cross Reference
  Buy Component : BC556 Find Stock and Price

Shortcut : BC550  BC550  BC550  BC550  BC550  BC550B  BC550B  BC550C  BC550C  BC550C  BC556  BC556  BC556  BC556  BC556  BC556  BC556  BC556  BC556  BC556  BC556  BC556  BC556  BC556  BC556  BC556  BC556A  BC556A  BC556A  BC556A  BC556A  BC556A  BC556B  BC556B  BC556B  BC556B  BC556B  BC556B  BC556B  BC556B  BC556B  BC556C  BC557  BC557  BC557  BC557  BC557  BC557  BC557  BC557  BC557  BC557  BC557  BC557  BC557  BC557  BC557A  BC557A  BC557A  BC557A  BC557A  BC557A  BC557A  BC557A  BC557B  BC557B  BC557B  BC557B  BC557B  BC557B  BC557B  BC557B  BC557C  BC557C  BC557C  BC557C  BC557C  BC557C  BC557C  BC558  BC558  BC558  BC558  BC558  BC558  BC558  BC558  BC558  BC558  BC558  BC558  BC558  BC558A  BC558A  BC558A  BC558A  BC558B  BC558B  BC558B  BC558B  BC558B  BC558B  BC558C  BC558C  BC558C  BC558C  BC558C  BC559  BC559  BC559  BC559  BC559  BC559  BC559  BC559  BC559  BC559  BC559  BC559A  BC559B  BC559B  BC559B  BC559B  BC559C  BC559C  BC559C  BC559C  BC559C 

Product Information

MOTOROLA SEMICONDUCTOR TECHNICAL DATA Amplifier Transistors Order this document by BC556/D PNP Silicon COLLECTOR 1 2 BASE 3 EMITTER BC556,B BC557A,B,C BC558B MAXIMUM RATINGS Rating Collector – Emitter Voltage Collector – Base Voltage Emitter – Base Voltage Collector Current — Continuous Total Device Dissipation @ TA = 25°C Derate above 25°C Total Device Dissipation @ TC = 25°C Derate above 25°C Operating and Storage Junction Temperature Range Symbol VCEO VCBO VEBO IC PD PD TJ, Tstg BC 556 –65 –80 BC 557 –45 –50 –5.0 –100 625 5.0 1.5 12 – 55 to +150 BC 558 –30 –30 Unit Vdc Vdc Vdc mAdc mW mW/°C Watt mW/°C °C 1 2 3 CASE 29–04, STYLE 17 TO–92 (TO–226AA) THERMAL CHARACTERISTICS Characteristic Thermal Resistance, Junction to Ambient Thermal Resistance, Junction to Case Symbol RqJA RqJC Max 200 83.3 Unit °C/W °C/W ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted) Characteristic Symbol Min Typ Max Unit OFF CHARACTERISTICS Collector – Emitter Breakdown Voltage (IC = –2.0 mAdc, IB = 0) V(BR)CEO BC556 BC557 BC558 V(BR)CBO BC556 BC557 BC558 V(BR)EBO BC556 BC557 BC558 ICES BC556 BC557 BC558 BC556 BC557 BC558 — — — — — — –2.0 –2.0 –2.0 — — — –100 –100 –100 –4.0 –4.0 –4.0 nA –5.0 –5.0 –5.0 — — — — — — –80 –50 –30 — — — — — — V –65 –45 –30 — — — — — — V V Collector – Base Breakdown Voltage (IC = –100 µAdc) Emitter – Base Breakdown Voltage (IE = –100 mAdc, IC = 0) Collector–Emitter Leakage Current (VCES = –40 V) (VCES = –20 V) (VCES = –20 V, TA = 125°C) µA Motorola Small–Signal Transistors, FETs and Diodes Device Data © Motorola, Inc. 1996 1 BC556,B BC557A,B,C BC558B ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted) (Continued) Characteristic Symbol Min Typ Max Unit ON CHARACTERISTICS DC Current Gain (IC = –10 µAdc, VCE = –5.0 V) hFE BC557A BC556B/557B/558B BC557C BC556 BC557 BC558 BC557A BC556B/557B/558B BC557C BC557A BC556B/557B/558B BC557C VCE(sat) — — — VBE(sat) — — VBE(on) –0.55 — –0.62 –0.7 –0.7 –0.82 –0.7 –1.0 — — V –0.075 –0.3 –0.25 –0.3 –0.6 –0.65 V — — — 120 120 120 120 180 420 — — — 90 150 270 — — — 170 290 500 120 180 300 — — — 500 800 800 220 460 800 — — — V — (IC = –2.0 mAdc, VCE = –5.0 V) (IC = –100 mAdc, VCE = –5.0 V) Collector – Emitter Saturation Voltage (IC = –10 mAdc, IB = –0.5 mAdc) (IC = –10 mAdc, IB = see Note 1) (IC = –100 mAdc, IB = –5.0 mAdc) Base – Emitter Saturation Voltage (IC = –10 mAdc, IB = –0.5 mAdc) (IC = –100 mAdc, IB = –5.0 mAdc) Base–Emitter On Voltage (IC = –2.0 mAdc, VCE = –5.0 Vdc) (IC = –10 mAdc, VCE = –5.0 Vdc) SMALL–SIGNAL CHARACTERISTICS Current – Gain — Bandwidth Product (IC = –10 mA, VCE = –5.0 V, f = 100 MHz) fT BC556 BC557 BC558 Cob NF BC556 BC557 BC558 hfe BC556 BC557/558 BC557A BC556B/557B/558B BC557C 125 125 125 240 450 — — 220 330 600 500 900 260 500 900 — — — 2.0 2.0 2.0 10 10 10 — — — — — 280 320 360 3.0 — — — 6.0 pF dB MHz Output Capacitance (VCB = –10 V, IC = 0, f = 1.0 MHz) Noise Figure (IC = –0.2 mAdc, VCE = –5.0 V, RS = 2.0 kW, f = 1.0 kHz, ∆f = 200 Hz) Small–Signal Current Gain (IC = –2.0 mAdc, VCE = –5.0 V, f = 1.0 kHz) Note 1: IC = –10 mAdc on the constant base current characteristics, which yields the point IC = –11 mAdc, VCE = –1.0 V. 2 Motorola Small–Signal Transistors, FETs and Diodes Device Data BC556,B BC557A,B,C BC558B BC557/BC558 2.0 hFE , NORMALIZED DC CURRENT GAIN 1.5 1.0 0.7 0.5 VCE = –10 V TA = 25°C V, VOLTAGE (VOLTS) –1.0 –0.9 –0.8 –0.7 –0.6 –0.5 –0.4 –0.3 –0.2 –0.1 VCE(sat) @ IC/IB = 10 –0.5 –1.0 –2.0 –5.0 –10 –20 IC, COLLECTOR CURRENT (mAdc) –50 –100 VBE(on) @ VCE = –10 V TA = 25°C VBE(sat) @ IC/IB = 10 0.3 0.2 –0.2 –0.5 –1.0 –2.0 ...

Link URL