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Amplifier Transistors(PNP Silicon)Maker : ON Semiconductor
Shortcut : BC557 BC557 BC557 BC557 BC557 BC557 BC557 BC557 BC557 BC557 BC557 BC557 BC557 BC557 BC557A BC557A BC557A BC557A BC557A BC557A BC557A BC557A BC557B BC557B BC557B BC557B BC557B BC557B BC557B BC557B BC557C BC557C BC557C BC557C BC557C BC557C BC557C |
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www.DataSheet4U.com BC556B, BC557A, B, C, BC558B, C Amplifier Transistors PNP Silicon Features http://onsemi.com • Pb−Free Packages are Available* COLLECTOR 1 MAXIMUM RATINGS Rating Collector - Emitter Voltage BC556 BC557 BC558 Collector - Base Voltage BC556 BC557 BC558 Emitter - Base Voltage Collector Current − Continuous Collector Current − Peak Base Current − Peak Total Device Dissipation @ TA = 25°C Derate above 25°C Total Device Dissipation @ TC = 25°C Derate above 25°C Operating and Storage Junction Temperature Range VEBO IC ICM IBM PD PD TJ, Tstg VCBO −80 −50 −30 −5.0 −100 −200 −200 625 5.0 1.5 12 −55 to +150 Vdc mAdc 1 2 mAdc mW mW/°C W mW/°C °C 3 Symbol VCEO −65 −45 −30 Vdc Value Unit Vdc 2 BASE 3 EMITTER TO−92 CASE 29 STYLE 17 MARKING DIAGRAM THERMAL CHARACTERISTICS Characteristic Thermal Resistance, Junction−to−Ambient Thermal Resistance, Junction−to−Case Symbol RqJA RqJC Max 200 83.3 Unit °C/W °C/W BC 55xx AYWW G G Maximum ratings are those values beyond which device damage can occur. Maximum ratings applied to the device are individual stress limit values (not normal operating conditions) and are not valid simultaneously. If these limits are exceeded, device functional operation is not implied, damage may occur and reliability may be affected. = Device Code x = 6, 7, or 8 A = Assembly Location Y = Year WW = Work Week G = Pb−Free Package (Note: Microdot may be in either location) BC55x ORDERING INFORMATION See detailed ordering and shipping information in the package dimensions section on page 6 of this data sheet. *For additional information on our Pb−Free strategy and soldering details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D. © Semiconductor Components Industries, LLC, 2005 1 September, 2005 − Rev. 2 Publication Order Number: BC556B/D BC556B, BC557A, B, C, BC558B, C ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted) Characteristic OFF CHARACTERISTICS Collector −Emitter Breakdown Voltage (IC = −2.0 mAdc, IB = 0) V(BR)CEO BC556 BC557 BC558 V(BR)CBO BC556 BC557 BC558 V(BR)EBO BC556 BC557 BC558 ICES BC556 BC557 BC558 BC556 BC557 BC558 − − − − − − −2.0 −2.0 −2.0 − − − −100 −100 −100 −4.0 −4.0 −4.0 nA −5.0 −5.0 −5.0 − − − − − − −80 −50 −30 − − − − − − V −65 −45 −30 − − − − − − V V Symbol Min Typ Max Unit Collector −Base Breakdown Voltage (IC = −100 mAdc) Emitter −Base Breakdown Voltage (IE = −100 mAdc, IC = 0) Collector−Emitter Leakage Current (VCES = −40 V) (VCES = −20 V) (VCES = −20 V, TA = 125°C) mA ON CHARACTERISTICS DC Current Gain (IC = −10 mAdc, VCE = −5.0 V) hFE A Series Device B Series Devices C Series Devices BC557 A Series Device B Series Devices C Series Devices A Series Device B Series Devices C Series Devices VCE(sat) − − − VBE(sat) − − VBE(on) −0.55 − −0.62 −0.7 −0.7 −0.82 −0.7 −1.0 − − V −0.075 −0.3 −0.25 −0.3 −0.6 −0.65 V − − − 120 120 180 420 − − − 90 150 270 − 170 290 500 120 180 300 − − − 800 220 460 800 − − − V − (IC = −2.0 mAdc, VCE = −5.0 V) (IC = −100 mAdc, VCE = −5.0 V) Collector −Emitter Saturation Voltage (IC = −10 mAdc, IB = −0.5 mAdc) (IC = −10 mAdc, IB = see Note 1) (IC = −100 mAdc, IB = −5.0 mAdc) Base −Emitter Saturation Voltage (IC = −10 mAdc, IB = −0.5 mAdc) (IC = −100 mAdc, IB = −5.0 mAdc) Base−Emitter On Voltage (IC = −2.0 mAdc, VCE = −5.0 Vdc) (IC = −10 mAdc, VCE = −5.0 Vdc) SMALL−SIGNAL CHARACTERISTICS Current −Gain − Bandwidth Product (IC = −10 mA, VCE = −5.0 V, f = 100 MHz) fT BC556 BC557 BC558 Cob NF BC556 BC557 BC558 hfe BC557 A Series Device B Series Devices C Series Devices 125 125 240 450 − − − − 900 260 500 900 − − − 2.0 2.0 2.0 10 10 10 − − − − 280 320 360 3.0 − âˆ... |
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