Maker : Motorola Inc
Part No. : BC557C

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MOTOROLA SEMICONDUCTOR TECHNICAL DATA Amplifier Transistors Order this document by BC556/D PNP Silicon COLLECTOR 1 2 BASE 3 EMITTER BC556,B BC557A,B,C BC558B MAXIMUM RATINGS Rating Collector – Emitter Voltage Collector – Base Voltage Emitter – Base Voltage Collector Current — Continuous Total Device Dissipation @ TA = 25°C Derate above 25°C Total Device Dissipation @ TC = 25°C Derate above 25°C Operating and Storage Junction Temperature Range Symbol VCEO VCBO VEBO IC PD PD TJ, Tstg BC 556 –65 –80 BC 557 –45 –50 –5.0 –100 625 5.0 1.5 12 – 55 to +150 BC 558 –30 –30 Unit Vdc Vdc Vdc mAdc mW mW/°C Watt mW/°C °C 1 2 3 CASE 29–04, STYLE 17 TO–92 (TO–226AA) THERMAL CHARACTERISTICS Characteristic Thermal Resistance, Junction to Ambient Thermal Resistance, Junction to Case Symbol RqJA RqJC Max 200 83.3 Unit °C/W °C/W ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted) Characteristic Symbol Min Typ Max Unit OFF CHARACTERISTICS Collector – Emitter Breakdown Voltage (IC = –2.0 mAdc, IB = 0) V(BR)CEO BC556 BC557 BC558 V(BR)CBO BC556 BC557 BC558 V(BR)EBO BC556 BC557 BC558 ICES BC556 BC557 BC558 BC556 BC557 BC558 — — — — — — –2.0 –2.0 –2.0 — — — –100 –100 –100 –4.0 –4.0 –4.0 nA –5.0 –5.0 –5.0 — — — — — — –80 –50 –30 — — — — — — V –65 –45 –30 — — — — — — V V Collector – Base Breakdown Voltage (IC = –100 µAdc) Emitter – Base Breakdown Voltage (IE = –100 mAdc, IC = 0) Collector–Emitter Leakage Current (VCES = –40 V) (VCES = –20 V) (VCES = –20 V, TA = 125°C) µA Motorola Small–Signal Transistors, FETs and Diodes Device Data © Motorola, Inc. 1996 1 BC556,B BC557A,B,C BC558B ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted) (Continued) Characteristic Symbol Min Typ Max Unit ON CHARACTERISTICS DC Current Gain (IC = –10 µAdc, VCE = –5.0 V) hFE BC557A BC556B/557B/558B BC557C BC556 BC557 BC558 BC557A BC556B/557B/558B BC557C BC557A BC556B/557B/558B BC557C VCE(sat) — — — VBE(sat) — — VBE(on) –0.55 — –0.62 –0.7 –0.7 –0.82 –0.7 –1.0 — — V –0.075 –0.3 –0.25 –0.3 –0.6 –0.65 V — — — 120 120 120 120 180 420 — — — 90 150 270 — — — 170 290 500 120 180 300 — — — 500 800 800 220 460 800 — — — V — (IC = –2.0 mAdc, VCE = –5.0 V) (IC = –100 mAdc, VCE = –5.0 V) Collector – Emitter Saturation Voltage (IC = –10 mAdc, IB = –0.5 mAdc) (IC = –10 mAdc, IB = see Note 1) (IC = –100 mAdc, IB = –5.0 mAdc) Base – Emitter Saturation Voltage (IC = –10 mAdc, IB = –0.5 mAdc) (IC = –100 mAdc, IB = –5.0 mAdc) Base–Emitter On Voltage (IC = –2.0 mAdc, VCE = –5.0 Vdc) (IC = –10 mAdc, VCE = –5.0 Vdc) SMALL–SIGNAL CHARACTERISTICS Current – Gain — Bandwidth Product (IC = –10 mA, VCE = –5.0 V, f = 100 MHz) fT BC556 BC557 BC558 Cob NF BC556 BC557 BC558 hfe BC556 BC557/558 BC557A BC556B/557B/558B BC557C 125 125 125 240 450 — — 220 330 600 500 900 260 500 900 — — — 2.0 2.0 2.0 10 10 10 — — — — — 280 320 360 3.0 — — — 6.0 pF dB MHz Output Capacitance (VCB = –10 V, IC = 0, f = 1.0 MHz) Noise Figure (IC = –0.2 mAdc, VCE = –5.0 V, RS = 2.0 kW, f = 1.0 kHz, ∆f = 200 Hz) Small–Signal Current Gain (IC = –2.0 mAdc, VCE = –5.0 V, f = 1.0 kHz) Note 1: IC = –10 mAdc on the constant base current characteristics, which yields the point IC = –11 mAdc, VCE = –1.0 V. 2 Motorola Small–Signal Transistors, FETs and Diodes Device Data BC556,B BC557A,B,C BC558B BC557/BC558 2.0 hFE , NORMALIZED DC CURRENT GAIN 1.5 1.0 0.7 0.5 VCE = –10 V TA = 25°C V, VOLTAGE (VOLTS) –1.0 –0.9 –0.8 –0.7 –0.6 –0.5 –0.4 –0.3 –0.2 –0.1 VCE(sat) @ IC/IB = 10 –0.5 –1.0 –2.0 –5.0 –10 –20 IC, COLLECTOR CURRENT (mAdc) –50 –100 VBE(on) @ VCE = –10 V TA = 25°C VBE(sat) @ IC/IB = 10 0.3 0.2 –0.2 –0.5 –1.0 –2.0 ...

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