Maker : Micro Commercial Components
Part No. : BC558

  Datasheet PDF : BC558.pdf
  Cross Reference : BC558 Cross Reference
  Buy Component : BC558 Find Stock and Price

Shortcut : BC550  BC550  BC550  BC550  BC550  BC550B  BC550B  BC550C  BC550C  BC550C  BC556  BC556  BC556  BC556  BC556  BC556  BC556  BC556  BC556  BC556  BC556  BC556  BC556  BC556  BC556  BC556  BC556A  BC556A  BC556A  BC556A  BC556A  BC556A  BC556B  BC556B  BC556B  BC556B  BC556B  BC556B  BC556B  BC556B  BC556B  BC556C  BC557  BC557  BC557  BC557  BC557  BC557  BC557  BC557  BC557  BC557  BC557  BC557  BC557  BC557  BC557A  BC557A  BC557A  BC557A  BC557A  BC557A  BC557A  BC557A  BC557B  BC557B  BC557B  BC557B  BC557B  BC557B  BC557B  BC557B  BC557C  BC557C  BC557C  BC557C  BC557C  BC557C  BC557C  BC558  BC558  BC558  BC558  BC558  BC558  BC558  BC558  BC558  BC558  BC558  BC558  BC558  BC558A  BC558A  BC558A  BC558A  BC558B  BC558B  BC558B  BC558B  BC558B  BC558B  BC558C  BC558C  BC558C  BC558C  BC558C  BC559  BC559  BC559  BC559  BC559  BC559  BC559  BC559  BC559  BC559  BC559  BC559A  BC559B  BC559B  BC559B  BC559B  BC559C  BC559C  BC559C  BC559C  BC559C 

Product Information

MCC Features l Through Hole Package l 150oC Junction Temperature Pin Configuration Bottom View
  omponents 21201 Itasca Street Chatsworth    !"# $ %    !"# BC556,B BC557,A,B,C BC558,B PNP Silicon Amplifier Transistor 625mW C B E Mechanical Data l Case: TO-92, Molded Plastic l Polarity: indicated as above. A TO-92 E B Maximum Ratings @ 25oC Unless Otherwise Specified Charateristic Collector-Emitter Voltage Symbol Value -65 VCEO -45 -30 -80 VCBO -50 -30 VEBO -5.0 IC Pd Pd RqJA Unit V C Collector-Base Voltage BC556 BC557 BC558 BC556 BC557 BC558 V V mA mW mW/oC W mW/oC o D Emitter-Base Voltage Collector Current(DC) Power Dissipation@TA=25oC Power Dissipation@TC=25oC Thermal Resistance, Junction to Ambient Air Thermal Resistance, Junction to Case Operating & Storage Temperature -100 625 5.0 1.5 12 200 83.3 G DIMENSIONS C/W C/W o DIM A B C D E G RqJC o Tj, TSTG -55~150 C INCHES MIN .175 .175 .500 .016 .135 .095 MAX .185 .185 --.020 .145 .105 MM MIN 4.45 4.46 12.7 0.41 3.43 2.42 MAX 4.70 4.70 --0.63 3.68 2.67 NOTE www.mccsemi.com BC556 thru BC558B MCC Symbol Min Typ Max Unit ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted) Characteristic OFF CHARACTERISTICS Collector – Emitter Breakdown Voltage (IC = –2.0 mAdc, IB = 0) V(BR)CEO BC556 BC557 BC558 V(BR)CBO BC556 BC557 BC558 V(BR)EBO BC556 BC557 BC558 –5.0 –5.0 –5.0 — — — — — — –80 –50 –30 — — — — — — V –65 –45 –30 — — — — — — V V Collector – Base Breakdown Voltage (IC = –100 µAdc) Emitter – Base Breakdown Voltage (IE = –100 mAdc, IC = 0) ON CHARACTERISTICS DC Current Gain (IC = –10 µAdc, VCE = –5.0 V) hFE BC557A BC556B/557B/558B BC557C BC556 BC557 BC558 BC557A BC556B/557B/558B BC557C BC557A BC556B/557B/558B BC557C VCE(sat) — VBE(sat) — VBE(on) –0.55 — –0.62 –0.7 –0.7 –0.82 — –1.0 V --–0.3 V — — — 120 120 120 120 180 420 — — — 90 150 270 — — — 170 290 500 120 180 300 — — — 500 800 800 220 460 800 — — — V — (IC = –2.0 mAdc, VCE = –5.0 V) (IC = –100 mAdc, VCE = –5.0 V) Collector – Emitter Saturation Voltage (IC = –100mAdc, IB = –5.0 mAdc) Base – Emitter Saturation Voltage (IC = –100 mAdc, IB = –5.0mAdc) Base–Emitter On Voltage (IC = –2.0 mAdc, VCE = –5.0 Vdc) (IC = –10 mAdc, VCE = –5.0 Vdc) SMALL–SIGNAL CHARACTERISTICS Current – Gain — Bandwidth Product (IC = –10 mA, VCE = –5.0 V, f = 100 MHz) fT BC556 BC557 BC558 Cob — — — — 280 320 360 3.0 — — — 6.0 pF MHz Output Capacitance (VCB = –10 V, IC = 0, f = 1.0 MHz) www.mccsemi.com BC556 thru BC558B BC557/BC558 2.0 hFE , NORMALIZED DC CURRENT GAIN 1.5 1.0 0.7 0.5 VCE = –10 V TA = 25°C V, VOLTAGE (VOLTS) –1.0 –0.9 –0.8 –0.7 –0.6 –0.5 –0.4 –0.3 –0.2 –0.1 0.2 –0.2 –0.5 –1.0 –2.0 –5.0 –10 –20 –50 IC, COLLECTOR CURRENT (mAdc) –100 –200 0 –0.1 –0.2 TA = 25°C MCC VBE(sat) @ IC/IB = 10 VBE(on) @ VCE = –10 V 0.3 VCE(sat) @ IC/IB = 10 –0.5 –1.0 –2.0 –5.0 –10 –20 IC, COLLECTOR CURRENT (mAdc) –50 –100 Figure 1. Normalized DC Current Gain Figure 2. “Saturation” and “On” Voltages –2.0 VCE , COLLECTOR–EMITTER VOLTAGE (V) θVB , TEMPERATURE COEFFICIENT (mV/ ° C) TA = 25°C –1.6 1.0 –55°C to +125°C 1.2 1.6 2.0 2.4 2.8 –1.2 IC = –10 mA IC = –50 mA IC = –20 mA IC = –200 mA IC = –100 mA –0.8 –0.4 0 –0.02 –0.1 –1.0 IB, BASE CURRENT (mA) –10 –20 –0.2 –10 –1.0 IC, COLLECTOR CURRENT (mA) –100 Figure 3. Collector Saturation Region f T CURRENT–GAIN – BANDWIDTH PRODUCT (MHz) , Figure 4. Base–Emitter Temperature Coefficient 10 7.0 C, CAPACITANCE (pF) 5.0 Cob Cib TA = 25°C 400 300 200 150 100 80 60 40 30 20 –0.5 VCE = –10 V TA = 25°C 3.0 2.0 1.0 –0.4 –0.6 –1.0 –2.0 –4.0 –6.0 –10 –20 –30 –40 –1.0 –2.0 ...

Link URL