Maker : Motorola Inc
Part No. : BC559B

  Datasheet PDF : BC559B.pdf
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MOTOROLA SEMICONDUCTOR TECHNICAL DATA Low Noise Transistors Order this document by BC559/D PNP Silicon COLLECTOR 1 2 BASE 3 EMITTER BC559, B, C BC560C MAXIMUM RATINGS Rating Collector – Emitter Voltage Collector – Base Voltage Emitter – Base Voltage Collector Current — Continuous Total Device Dissipation @ TA = 25°C Derate above 25°C Total Device Dissipation @ TC = 25°C Derate above 25°C Operating and Storage Junction Temperature Range Symbol VCEO VCBO VEBO IC PD PD TJ, Tstg BC559 –30 –30 –5.0 –100 625 5.0 1.5 12 – 55 to +150 BC560 –45 –50 Unit Vdc Vdc Vdc mAdc mW mW/°C Watt mW/°C °C 1 2 3 CASE 29–04, STYLE 17 TO–92 (TO–226AA) THERMAL CHARACTERISTICS Characteristic Thermal Resistance, Junction to Ambient Thermal Resistance, Junction to Case Symbol RqJA RqJC Max 200 83.3 Unit °C/W °C/W ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted) Characteristic Symbol Min Typ Max Unit OFF CHARACTERISTICS Collector – Emitter Breakdown Voltage (IC = –10 mAdc, IB = 0) Collector – Base Breakdown Voltage (IC = –10 µAdc, IE = 0) Emitter – Base Breakdown Voltage (IE = –10 mAdc, IC = 0) Collector Cutoff Current (VCB = –30 Vdc, IE = 0) (VCB = –30 Vdc, IE = 0, TA = +125°C) Emitter Cutoff Current (VEB = –4.0 Vdc, IC = 0) V(BR)CEO BC559 BC560 V(BR)CBO BC559 BC560 V(BR)EBO ICBO — — IEBO — — — — –15 –5.0 –15 nAdc µAdc nAdc –30 –50 –5.0 — — — — — — Vdc –30 –45 — — — — Vdc Vdc REV 1 Motorola Small–Signal Transistors, FETs and Diodes Device Data © Motorola, Inc. 1996 1 BC559, B, C BC560C ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted) (Continued) Characteristic Symbol Min Typ Max Unit ON CHARACTERISTICS DC Current Gain (IC = –10 µAdc, VCE = –5.0 Vdc) (IC = –2.0 mAdc, VCE = –5.0 Vdc) hFE BC559B BC559C/560C BC559B BC559C/560C BC559 VCE(sat) — — — VBE(sat) VBE(on) — — –0.55 –0.52 –0.55 –0.62 — — –0.7 — –0.075 –0.3 –0.25 –1.1 –0.25 –0.6 — — Vdc Vdc 100 100 180 380 120 150 270 290 500 — — — 460 800 800 Vdc — Collector – Emitter Saturation Voltage (IC = –10 mAdc, IB = –0.5 mAdc) (IC = –10 mAdc, IB = see note 1) (IC = –100 mAdc, IB = –5.0 mAdc, see note 2) Base–Emitter Saturation Voltage (IC = –100 mAdc, IB = –5.0 mAdc) Base–Emitter On Voltage (IC = –10 µAdc, VCE = –5.0 Vdc) (IC = –100 µAdc, VCE = –5.0 Vdc) (IC = –2.0 mAdc, VCE = –5.0 Vdc) SMALL–SIGNAL CHARACTERISTICS Current – Gain — Bandwidth Product (IC = –10 mAdc, VCE = –5.0 Vdc, f = 100 MHz) Collector–Base Capacitance (VCB = –10 Vdc, IE = 0, f = 1.0 MHz) Small–Signal Current Gain (IC = –2.0 mAdc, VCE = –5.0 V, f = 1.0 kHz) BC559B BC559C/BC560C NF1 NF2 fT Ccbo hfe 240 450 — — 330 600 0.5 — 500 900 dB 2.0 10 — — 250 2.5 — — MHz pF — Noise Figure (IC = –200 µAdc, VCE = –5.0 Vdc, RS = 2.0 kΩ, f = 1.0 kHz) (IC = –200 µAdc, VCE = –5.0 Vdc, RS = 100 kΩ, f = 1.0 kHz, ∆f = 200 kHz) NOTES: 1. IB is value for which IC = –11 mA at VCE = –1.0 V. 2. Pulse test = 300 µs – Duty cycle = 2%. 2 Motorola Small–Signal Transistors, FETs and Diodes Device Data BC559, B, C BC560C 2.0 hFE, NORMALIZED DC CURRENT GAIN 1.5 1.0 0.8 0.6 0.4 0.3 0.2 –0.2 VCE = –10 V TA = 25°C V, VOLTAGE (VOLTS) –1.0 –0.9 –0.8 –0.7 –0.6 –0.5 –0.4 –0.3 –0.2 –0.1 –0.5 –1.0 –2.0 –5.0 –10 –20 –50 –100 –200 IC, COLLECTOR CURRENT (mAdc) 0 –0.1 –0.2 VCE(sat) @ IC/IB = 10 –0.5 –1.0 –2.0 –5.0 –10 –20 IC, COLLECTOR CURRENT (mAdc) –50 –100 TA = 25°C VBE(sat) @ IC/IB = 10 VBE(on) @ VCE = –10 V Figure 1. Normalized DC Current Gain f T, CURRENT–GAIN — BANDWIDTH PRODUCT (MHz) Figure 2. “Saturation” and “On” Voltages 400 300 200 C, CAPACITANCE (pF) 10 7.0 5.0 Cib TA = 25°C 100 80 60 40 30 20 VCE = –10 V TA = 25°C 3.0 Cob 2.0 –0.5 –0.7 –1.0 –2.0 –5.0 –7.0 –10 ...

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