Maker : Philips Semiconductors
Part No. : BC559C

  Datasheet PDF : BC559C.pdf
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DISCRETE SEMICONDUCTORS DATA SHEET book, halfpage M3D186 BC559 PNP general purpose transistor Product specification Supersedes data of 1997 Jun 03 1999 May 28 Philips Semiconductors Product specification PNP general purpose transistor FEATURES • Low current (max. 100 mA) • Low voltage (max. 30 V). APPLICATIONS • General purpose switching and amplification. DESCRIPTION PNP transistor in a TO-92 (SOT54) plastic package. NPN complement: BC549. 1 handbook, halfpage BC559 PINNING PIN 1 2 3 emitter base collector DESCRIPTION 2 3 3 2 1 MAM281 Fig.1 Simplified outline (TO-92; SOT54) and symbol. LIMITING VALUES In accordance with the Absolute Maximum Rating System (IEC 134). SYMBOL VCBO VCEO VEBO IC ICM IBM Ptot Tstg Tj Tamb PARAMETER collector-base voltage collector-emitter voltage emitter-base voltage collector current (DC) peak collector current peak base current total power dissipation storage temperature junction temperature operating ambient temperature Tamb ≤ 25 °C CONDITIONS open emitter open base open collector − − − − − − − −65 − −65 MIN. MAX. −30 −30 −5 −100 −200 −200 500 +150 150 +150 V V V mA mA mA mW °C °C °C UNIT 1999 May 28 2 Philips Semiconductors Product specification PNP general purpose transistor THERMAL CHARACTERISTICS SYMBOL Rth j-a Note 1. Transistor mounted on an FR4 printed-circuit board. CHARACTERISTICS Tj = 25 °C unless otherwise specified. SYMBOL ICBO IEBO hFE VCEsat VBEsat VBE Cc fT F PARAMETER collector cut-off current emitter cut-off current DC current gain; BC559C collector-emitter saturation voltage base-emitter saturation voltage base-emitter voltage collector capacitance transition frequency noise figure; BC559C CONDITIONS IE = 0; VCB = −30 V IE = 0; VCB = −30 V; Tj = 150 °C IC = 0; VEB = −5 V IC = −2 mA; VCE = −5 V; see Fig.2 IC = −10 mA; IB = −0.5 mA IC = −100 mA; IB = −5 mA IC = −10 mA; IB = −0.5 mA; note 1 IC = −100 mA; IB = −5 mA; note 1 IC = −2 mA; VCE = −5 V; note 2 IC = −10 mA; VCE = −5 V; note 2 IE = ie = 0; VCB = −10 V; f = 1 MHz IC = −200 µA; VCE = −5 V; RS = 2 kΩ; f = 30 Hz to 15.7 kHz IC = −200 µA; VCE = −5 V; RS = 2 kΩ; f = 1 kHz; B = 200 Hz Notes 1. VBEsat decreases by about −1.7 mV/K with increasing temperature. 2. VBE decreases by about −2 mV/K with increasing temperature. MIN. − − − 420 − − − − −600 − − − − TYP. −1 − − − −60 −180 −750 −930 −650 − 4 − − − PARAMETER thermal resistance from junction to ambient CONDITIONS note 1 VALUE 250 BC559 UNIT K/W MAX. −15 −4 −100 800 −300 −650 − − −750 −820 − − 4 4 UNIT nA µA nA mV mV mV mV mV mV pF MHz dB dB IE = −10 mA; VCB = −5 V; f = 100 MHz 100 1999 May 28 3 Philips Semiconductors Product specification PNP general purpose transistor BC559 handbook, full pagewidth 600 MBH728 hFE 500 VCE = −5 V 400 300 200 100 0 −10−2 −10−1 −1 −10 −102 IC (mA) −103 BC559C. Fig.2 DC current gain; typical values. 1999 May 28 4 Philips Semiconductors Product specification PNP general purpose transistor PACKAGE OUTLINE Plastic single-ended leaded (through hole) package; 3 leads BC559 SOT54 c E d A L b 1 D 2 e1 e 3 b1 L1 0 2.5 scale 5 mm DIMENSIONS (mm are the original dimensions) UNIT mm A 5.2 5.0 b 0.48 0.40 b1 0.66 0.56 c 0.45 0.40 D 4.8 4.4 d 1.7 1.4 E 4.2 3.6 e 2.54 e1 1.27 L 14.5 12.7 L1(1) 2.5 Note 1. Terminal dimensions within this zone are uncontrolled to allow for flow of plastic and terminal irregularities. OUTLINE VERSION SOT54 REFERENCES IEC JEDEC TO-92 EIAJ SC-43 EUROPEAN PROJECTION ISSUE DATE 97-02-28 1999 May 28 5 Philips Semiconductors Product specification PNP general purpose transistor DEFINITIONS Data sheet status Objective specification Preliminary specification Product specification Limiting values BC559 This data sheet contains target or goal specifications for product ...

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