Maker : Infineon Technologies AG
Part No. : BC846AT

  Datasheet PDF : BC846AT.pdf
  Cross Reference : BC846AT Cross Reference
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Product Information

BC846T...BC850T NPN Silicon AF Transistors For AF input stages and driver applications High current gain Low collector-emitter saturation voltage Low noise between 30 Hz and 15 kHz Complementary types: BC856T, BC857T, BC858T, BC859T, BC860T BC846AT BC846BT BC847AT BC847BT BC847CT BC848AT BC848BT BC848CT BC849BT BC849CT BC850BT BC850CT 
Type



3 2 1 VPS05996 Marking 1As 1Bs 1Es 1Fs 1Gs 1Js 1Ks 1Ls 2Bs 2cs 2Fs 2Gs 1=B 1=B 1=B 1=B 1=B 1=B 1=B 1=B 1=B 1=B 1=B 1=B Pin Configuration 2=E 2=E 2=E 2=E 2=E 2=E 2=E 2=E 2=E 2=E 2=E 2=E 3=C 3=C 3=C 3=C 3=C 3=C 3=C 3=C 3=C 3=C 3=C 3=C Package SC75 SC75 SC75 SC75 SC75 SC75 SC75 SC75 SC75 SC75 SC75 SC75 1 Aug-01-2002 BC846T...BC850T Maximum Ratings Parameter Collector-emitter voltage Collector-base voltage Collector-emitter voltage Emitter-base voltage DC collector current Peak collector current Peak base current Peak emitter current Total power dissipation, TS = 109 °C Junction temperature Storage temperature Thermal Resistance  Symbol VCEO VCBO VCES VEBO IC ICM IBM IEM Ptot Tj Tstg RthJS BC846T 65 80 80 6 BC847T BC848T BC850T BC849T 45 50 50 6 100 200 200 200 250 150 -65 ... 150 30 30 30 5 Unit V mA mA mW °C Junction - soldering point1) Parameter DC Characteristics Collector-emitter breakdown voltage IC = 10 mA, IB = 0 IC = 10 mA, IB = 0 IC = 10 mA, IB = 0 IC = 10 µA, IE = 0 IC = 10 µA, IE = 0 IC = 10 µA, IE = 0 BC846T BC847T/BC850T BC848T/BC849T 165 Values K/W Unit max. V Electrical Characteristics at TA = 25°C, unless otherwise specified. Symbol min. V(BR)CEO 65 45 30 V(BR)CBO 80 50 30 typ. Collector-base breakdown voltage BC846T BC847T/850T BC848T/849T 1For calculation of R thJA please refer to Application Note Thermal Resistance 2 Aug-01-2002 BC846T...BC850T Electrical Characteristics at TA = 25°C, unless otherwise specified. Parameter DC Characteristics Collector-emitter breakdown voltage IC = 10 µA, VBE = 0 IC = 10 µA, VBE = 0 IC = 10 µA, VBE = 0 IE = 1 µA, IC = 0 IE = 1 µA, IC = 0 IE = 1 µA, IC = 0 Collector cutoff current VCB = 30 V, IE = 0 Collector cutoff current VCB = 30 V, IE = 0 , TA = 150 °C DC current gain 1) IC = 10 µA, VCE = 5 V IC = 10 µA, VCE = 5 V IC = 10 µA, VCE = 5 V DC current gain 1) IC = 2 mA, VCE = 5 V IC = 2 mA, VCE = 5 V IC = 2 mA, VCE = 5 V IC = 10 mA, IB = 0.5 mA IC = 100 mA, IB = 5 mA Base-emitter saturation voltage 1) IC = 10 mA, IB = 0.5 mA IC = 100 mA, IB = 5 mA Base-emitter voltage 1) IC = 2 mA, VCE = 5 V IC = 10 mA, VCE = 5 V 1) Pulse test: t ≤=300µs, D = 2% Symbol min. V(BR)CES 65 50 30 V(BR)EBO 6 6 5 ICBO ICBO hFE hFE-group A hFE-group B hFE-group C hFE hFE-group A hFE-group B hFE-group C VCEsat VBEsat VBE(ON) 580 110 200 420 - Values typ. max. Unit V 15 5 nA µA 140 250 480 180 290 520 90 200 700 900 660 220 450 800 mV 250 600 700 770 BC846T BC847T/850T BC848T/849T BC846T BC847T/BC850T BC848T/BC849T Emitter-base breakdown voltage Collector-emitter saturation voltage1) 3 Aug-01-2002 BC846T...BC850T Electrical Characteristicsat TA = 25°C, unless otherwise specified. Parameter AC Characteristics Transition frequency IC = 20 mA, VCE = 5 V, f = 100 MHz Collector-base capacitance VCB = 10 V, f = 1 MHz Emitter-base capacitance VEB = 0.5 V, f = 1 MHz IC = 2 mA, VCE = 5 V, f = 1 kHz IC = 2 mA, VCE = 5 V, f = 1 kHz IC = 2 mA, VCE = 5 V, f = 1 kHz IC = 2 mA, VCE = 5 V, f = 1 kHz IC = 2 mA, VCE = 5 V, f = 1 kHz IC = 2 mA, VCE = 5 V, f = 1 kHz IC = 2 mA, VCE = 5 V, f = 1 kHz IC = 2 mA, VCE = 5 V, f = 1 kHz IC = 2 mA, VCE = 5 V, f = 1 kHz Open-circuit output admittance IC = 2 mA, VCE = 5 V, f = 1 kHz IC = 2 mA, VCE = 5 V, f = 1 kHz IC = 2 mA, VCE = 5 V, f = 1 kHz hFE-group A hFE-group B hFE-group C hFE-group A hFE-group B hFE-group C h12e h21e h22e 18 30 60 200 330 600 S 1.5 2 3 hFE-group A hFE-group B hFE-group C hFE-group A hFE-group B hFE-group C 2.7 4.7 8.7 10-4 Short-circuit input impedance Ceb h11e 8 k Ccb 3 pF fT 250 MHz Symbol min. Values typ. max. Unit Open-circuit reverse voltage tran...

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