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Part No. : BC846AWT1

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MOTOROLA SEMICONDUCTOR TECHNICAL DATA Order this document by BC846AWT1/D General Purpose Transistors NPN Silicon These transistors are designed for general purpose amplifier applications. They are housed in the SOT–323/SC–70 which is designed for low power surface mount applications. 1 BASE 2 EMITTER Symbol VCEO VCBO VEBO IC BC846 65 80 6.0 100 BC847 45 50 6.0 100 BC848 30 30 5.0 100 Unit V V V mAdc COLLECTOR 3 BC846AWT1,BWT1 BC847AWT1,BWT1, CWT1 BC848AWT1,BWT1, CWT1 MAXIMUM RATINGS Rating Collector – Emitter Voltage Collector – Base Voltage Emitter – Base Voltage Collector Current — Continuous 3 1 2 THERMAL CHARACTERISTICS Characteristic Total Device Dissipation FR– 5 Board, (1) TA = 25°C Thermal Resistance, Junction to Ambient Total Device Dissipation Junction and Storage Temperature Symbol PD RqJA PD TJ, Tstg Max 150 833 2.4 – 55 to +150 Unit mW °C/W mW/°C °C CASE 419–02, STYLE 3 SOT–323/SC–70 DEVICE MARKING BC846AWT1 = 1A; BC846BWT1 = 1B; BC847AWT1 = 1E; BC847BWT1 = 1F; BC847CWT1 = 1G; BC848AWT1 = 1J; BC848BWT1 = 1K; BC848CWT1 = 1L ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted) Characteristic Symbol Min Typ Max Unit OFF CHARACTERISTICS Collector – Emitter Breakdown Voltage (IC = 10 mA) Collector – Emitter Breakdown Voltage (IC = 10 µA, VEB = 0) Collector – Base Breakdown Voltage (IC = 10 mA) Emitter – Base Breakdown Voltage (IE = 1.0 mA) Collector Cutoff Current (VCB = 30 V) (VCB = 30 V, TA = 150°C) 1. FR–5 = 1.0 x 0.75 x 0.062 in BC846 Series BC847 Series BC848 Series BC846 Series BC847 Series BC848 Series BC846 Series BC847 Series BC848 Series BC846 Series BC847 Series BC848 Series V(BR)CEO 65 45 30 80 50 30 80 50 30 6.0 6.0 5.0 — — — — — — — — — — — — — — — — — — — — — — — — — — — — 15 5.0 V V(BR)CES V V(BR)CBO V V(BR)EBO V ICBO nA µA Thermal Clad is a trademark of the Bergquist Company. Motorola Small–Signal Transistors, FETs and Diodes Device Data © Motorola, Inc. 1996 1 BC846AWT1,BWT1 BC847AWT1,BWT1,CWT1 BC848AWT1,BWT1,CWT1 ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted) (Continued) Characteristic Symbol Min Typ Max Unit ON CHARACTERISTICS DC Current Gain (IC = 10 µA, VCE = 5.0 V) BC846A, BC847A, BC848A BC846B, BC847B, BC848B BC847C, BC848C BC846A, BC847A, BC848A BC846B, BC847B, BC848B BC847C, BC848C VCE(sat) VBE(sat) VBE(on) hFE — — — 110 200 420 — — — — 580 — 90 150 270 180 290 520 — — 0.7 0.9 660 — — — — 220 450 800 0.25 0.6 — — 700 770 V V mV — (IC = 2.0 mA, VCE = 5.0 V) Collector – Emitter Saturation Voltage (IC = 10 mA, IB = 0.5 mA) Collector – Emitter Saturation Voltage (IC = 100 mA, IB = 5.0 mA) Base – Emitter Saturation Voltage (IC = 10 mA, IB = 0.5 mA) Base – Emitter Saturation Voltage (IC = 100 mA, IB = 5.0 mA) Base – Emitter Voltage (IC = 2.0 mA, VCE = 5.0 V) Base – Emitter Voltage (IC = 10 mA, VCE = 5.0 V) SMALL– SIGNAL CHARACTERISTICS Current – Gain — Bandwidth Product (IC = 10 mA, VCE = 5.0 Vdc, f = 100 MHz) Output Capacitance (VCB = 10 V, f = 1.0 MHz) Noise Figure (IC = 0.2 mA, VCE = 5.0 Vdc, RS = 2.0 kΩ, f = 1.0 kHz, BW = 200 Hz) BC846A, BC847A, BC848A BC846B, BC847B, BC848B BC847C, BC848C fT Cobo NF — — — — 10 4.0 100 — — — — 4.5 MHz pF dB 2.0 hFE , NORMALIZED DC CURRENT GAIN 1.5 1.0 0.8 0.6 0.4 0.3 0.2 VCE = 10 V TA = 25°C V, VOLTAGE (VOLTS) 1.0 0.9 0.8 0.7 0.6 0.5 0.4 0.3 0.2 0.1 0.2 0.5 50 2.0 5.0 10 1.0 20 IC, COLLECTOR CURRENT (mAdc) 100 200 0 0.1 VCE(sat) @ IC/IB = 10 0.2 0.3 0.5 0.7 1.0 2.0 3.0 5.0 7.0 10 20 30 IC, COLLECTOR CURRENT (mAdc) 50 70 100 VBE(on) @ VCE = 10 V TA = 25°C VBE(sat) @ IC/IB = 10 Figure 1. Normalized DC Current Gain 2.0 VCE , COLLECTOR–EMITTER VOLTAGE (V) TA = 25°C 1.6 IC = 200 mA 1.2 IC = IC = IC = 50 mA 10 mA 20 mA 0.8 IC = 100 mA θVB, TEMPERATURE COEFFICIENT (mV/ °C) 1.0 Figure 2. “Saturation” and “On” Voltages –55°C to...

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