Maker : Philips Semiconductors
Part No. : BC846AW

  Datasheet PDF : BC846AW.pdf
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Product Information

DISCRETE SEMICONDUCTORS DATA SHEET book, halfpage M3D102 BC846W; BC847W NPN general purpose transistors Product specification Supersedes data of 1997 Mar 27 1999 Apr 23 Philips Semiconductors Product specification NPN general purpose transistors FEATURES • Low current (max. 100 mA) • Low voltage (max. 65 V). APPLICATIONS • General purpose switching and amplification. DESCRIPTION NPN transistor in a SC70; SOT323 plastic package. PNP complements: BC856W and BC857W. MARKING handbook, halfpage BC846W; BC847W PINNING PIN 1 2 3 base emitter collector DESCRIPTION 3 3 1 TYPE NUMBER BC846W BC846AW BC846BW BC847W Note MARKING CODE(1) 1D∗ 1A∗ 1B∗ 1H∗ TYPE NUMBER BC847AW BC847BW BC847CW MARKING CODE(1) 1E∗ 1F∗ 1G∗ 1 Top view 2 MAM062 2 1. ∗ = - : Made in Hong Kong. ∗ = t : Made in Malaysia. Fig.1 Simplified outline (SC70; SOT323) and symbol. LIMITING VALUES In accordance with the Absolute Maximum Rating System (IEC 134). SYMBOL VCBO BC846W BC847W VCEO collector-emitter voltage BC846W BC847W VEBO IC ICM IBM Ptot Tstg Tj Tamb Note 1. Transistor mounted on an FR4 printed-circuit board. 1999 Apr 23 2 emitter-base voltage collector current (DC) peak collector current peak base current total power dissipation storage temperature junction temperature operating ambient temperature Tamb ≤ 25 °C; note 1 open collector open base − − − − − − − −65 − −65 65 45 5 100 200 200 200 +150 150 +150 V V V mA mA mA mW °C °C °C PARAMETER collector-base voltage CONDITIONS open emitter − − 80 50 V V MIN. MAX. UNIT Philips Semiconductors Product specification NPN general purpose transistors THERMAL CHARACTERISTICS SYMBOL Rth j-a Note 1. Transistor mounted on an FR4 printed-circuit board. CHARACTERISTICS Tamb = 25 °C unless otherwise specified. SYMBOL ICBO IEBO hFE PARAMETER collector cut-off current emitter cut-off current DC current gain BC846W BC847W BC846AW; BC847AW BC846BW; BC847BW BC847CW VCEsat VBEsat VBE Cc fT F Note 1. Pulse test: tp ≤ 300 µs; δ ≤ 0.02. collector-emitter saturation voltage base-emitter saturation voltage base-emitter voltage collector capacitance transition frequency noise figure IC = 10 mA; IB = 0.5 mA IC = 100 mA; IB = 5 mA; note 1 IC = 10 mA; IB = 0.5 mA IC = 100 mA; IB = 5 mA IC = 2 mA; VCE = 5 V IC = 10 mA; VCE = 5 V IE = ie = 0; VCB = 10 V; f = 1 MHz IC = 200 µA; VCE = 5 V; RS = 2 kΩ; f = 1 kHz; B = 200 Hz CONDITIONS IE = 0; VCB = 30 V IE = 0; VCB = 30 V; Tj = 150 °C IC = 0; VEB = 5 V IC = 2 mA; VCE = 5 V; see Figs 2, 3 and 4 PARAMETER thermal resistance from junction to ambient CONDITIONS note 1 BC846W; BC847W VALUE 625 UNIT K/W MIN. − − − 110 110 110 200 420 − − − − 580 − − − TYP. − − − − − − − − − − 700 900 − − − − − MAX. UNIT 15 5 100 450 800 220 450 800 250 600 − − 700 770 3 − 10 mV mV mV mV mV mV pF MHz dB nA µA nA IC = 10 mA; VCE = 5 V; f = 100 MHz 100 1999 Apr 23 3 Philips Semiconductors Product specification NPN general purpose transistors BC846W; BC847W handbook, full pagewidth 250 MBH723 hFE 200 VCE = 5 V 150 100 50 0 10−2 10−1 1 10 102 IC (mA) 103 BC846AW; BC847AW. Fig.2 DC current gain; typical values. handbook, full pagewidth 300 MBH724 hFE VCE = 5 V 200 100 0 10−2 10−1 1 10 102 IC (mA) 103 BC846BW; BC847BW. Fig.3 DC current gain; typical values. 1999 Apr 23 4 Philips Semiconductors Product specification NPN general purpose transistors BC846W; BC847W handbook, full pagewidth 600 MBH725 VCE = 5 V hFE 400 200 0 10−2 10−1 1 10 102 IC (mA) 103 BC847CW. Fig.4 DC current gain; typical values. 1999 Apr 23 5 Philips Semiconductors Product specification NPN general purpose transistors PACKAGE OUTLINE Plastic surface mounted package; 3 leads BC846W; BC847W SOT323 D B E A X y HE vMA 3 Q A A1 c 1 e1 e bp 2 wM B Lp detail X 0 1 scale 2 mm DIMENSIONS (mm are the original dimensions) UN...

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