Maker : Infineon Technologies AG
Part No. : BC846A

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Product Information

BC846...BC850 NPN Silicon AF Transistors For AF input stages and driver applications High current gain Low collector-emitter saturation voltage Low noise between 30 Hz and 15 kHz Complementary types: BC856, BC857, BC858 BC859, BC860 (PNP)




3 2 1 VPS05161 Type BC846A BC846B BC847A BC847B BC847C BC848A BC848B BC848C BC849B BC849C BC850B BC850C Marking 1As 1Bs 1Es 1Fs 1Gs 1Js 1Ks 1Ls 2Bs 2Cs 2Fs 2Gs 1=B B=1 B=1 1=B 1=B 1=B 1=B 1=B 1=B 1=B 1=B 1=B Pin Configuration 2=E 2=E 2=E 2=E 2=E 2=E 2=E 2=E 2=E 2=E 2=E 2=E 3=C 3=C 3=C 3=C 3=C 3=C 3=C 3=C 3=C 3=C 3=C 3=C Package SOT23 SOT23 SOT23 SOT23 SOT23 SOT23 SOT23 SOT23 SOT23 SOT23 SOT23 SOT23 1 Nov-20-2002 BC846...BC850 Maximum Ratings Parameter Collector-emitter voltage Collector-base voltage Collector-emitter voltage Emitter-base voltage DC collector current Peak collector current Peak base current Peak emitter current Total power dissipation, TS = 71 °C Junction temperature Storage temperature Thermal Resistance Symbol VCEO VCBO VCES VEBO IC ICM IBM IEM Ptot Tj Tstg RthJS BC846 65 80 80 6 BC847 BC850 45 50 50 6 100 200 200 200 330 150 -65 ... 150 BC848 BC849 30 30 30 5 Unit V mA mA mW °C Electrical Characteristics at TA = 25°C, unless otherwise specified. Parameter DC Characteristics Collector-emitter breakdown voltage IC = 10 mA, IB = 0 BC846 BC847/850 BC848/849 Collector-base breakdown voltage IC = 10 µA, IE = 0 BC846 BC847/850 BC848/849 V(BR)CBO 80 50 30 V(BR)CEO 65 45 30 V Symbol min. Values typ. max. Unit 1For calculation of R thJA please refer to Application Note Thermal Resistance 2
Junction - soldering point1) 240 K/W Nov-20-2002 BC846...BC850 Electrical Characteristics at TA = 25°C, unless otherwise specified. Parameter Symbol Values min. DC Characteristics Collector-emitter breakdown voltage IC = 10 µA, VBE = 0 BC846 BC847/850 BC848/849 Emitter-base breakdown voltage IE = 1 µA, IC = 0 Collector cutoff current VCB = 40 V, IE = 0 Collector cutoff current VCB = 30 V, IE = 0 , TA = 150 °C DC current gain 1) IC = 10 µA, VCE = 5 V hFE -group A hFE -group B hFE -group C DC current gain 1) IC = 2 mA, VCE = 5 V hFE -group A hFE -group B hFE -group C Collector-emitter saturation voltage1) IC = 10 mA, IB = 0.5 mA IC = 100 mA, IB = 5 mA Base-emitter saturation voltage 1) IC = 10 mA, IB = 0.5 mA IC = 100 mA, IB = 5 mA Base-emitter voltage 1) IC = 2 mA, VCE = 5 V IC = 10 mA, VCE = 5 V VBE(ON) 580 660 700 770 VBEsat 700 900 VCEsat 90 200 250 600 hFE 110 200 420 180 290 520 220 450 800 hFE 140 250 480 ICBO 5 BC846/847 BC848-850 ICBO V(BR)EBO 6 5 15 V(BR)CES 80 50 30 typ. max. Unit V nA µA - mV 1) Pulse test: t ≤=300µs, D = 2% 3 Nov-20-2002 BC846...BC850 Electrical Characteristics at TA = 25°C, unless otherwise specified. Parameter Symbol Values min. AC Characteristics Transition frequency IC = 10 mA, VCE = 5 V, f = 100 MHz Collector-base capacitance VCB = 10 V, f = 1 MHz Emitter-base capacitance VEB = 0.5 V, f = 1 MHz IC = 2 mA, VCE = 5 V, f = 1 kHz Short-circuit input impedance Ceb h11e Ccb fT Unit max. k typ. 250 3 8 - MHz pF hFE -gr.A hFE -gr.B hFE -gr.C h12e 2.7 4.5 8.7 1.5 2 3 200 330 600 18 30 60 1.2 - Open-circuit reverse voltage transf.ratio IC = 2 mA, VCE = 5 V, f = 1 kHz 10-4 hFE -gr.A hFE -gr.B hFE -gr.C h21e S 4 dB Short-circuit forward current transf.ratio IC = 2 mA, VCE = 5 V, f = 1 kHz hFE -gr.A hFE -gr.B hFE -gr.C h22e IC = 2 mA, VCE = 5 V, f = 1 kHz hFE -gr.A hFE -gr.B hFE -gr.C F Noise figure IC = 200 µA, VCE = 5 V, RS = 2 k , Equivalent noise voltage IC = 200 µA, VCE = 5 V, RS = 2 k , - BC849 BC850 Vn f = 10 ... 50 Hz   f = 1 kHz, f = 200 Hz - - 0.135 BC850 4 Nov-20-2002  Open-circuit output admittance µV   BC846...BC850 Total power dissipation Ptot = f(TS) Collector-base capacitance CCB = f (VCBO) Emitter-base capacitance CEB = f (VEBO) BC 846...850 EHP00361 360 mW 300 270 C CB0 ( C EB0 ) 12 pF 10 P tot 240 210 180 150 120 90 60 30 0 0 15 30 45 60 75 90...

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