Maker : Philips Semiconductors
Part No. : BC846A

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Product Information

DISCRETE SEMICONDUCTORS DATA SHEET book, halfpage M3D088 BC846; BC847 NPN general purpose transistors Product specification Supersedes data of 1997 Mar 12 1999 Apr 23 Philips Semiconductors Product specification NPN general purpose transistors FEATURES • Low current (max. 100 mA) • Low voltage (max. 65 V). APPLICATIONS • General purpose switching and amplification. DESCRIPTION NPN transistor in a SOT23 plastic package. PNP complements: BC856 and BC857. MARKING TYPE NUMBER BC846 BC846A BC846B BC847 Note 1. ∗ = p : Made in Hong Kong. ∗ = t : Made in Malaysia. MARKING CODE 1D∗ 1A∗ 1B∗ 1H* TYPE NUMBER BC847A BC847B BC847C MARKING CODE(1) 1E∗ 1F∗ 1G∗ Top view handbook, halfpage BC846; BC847 PINNING PIN 1 2 3 base emitter collector DESCRIPTION 3 3 1 2 1 2 MAM255 Fig.1 Simplified outline (SOT23) and symbol. LIMITING VALUES In accordance with the Absolute Maximum Rating System (IEC 134). SYMBOL VCBO BC846 BC847 VCEO collector-emitter voltage BC846 BC847 VEBO IC ICM IBM Ptot Tstg Tj Tamb Note 1. Transistor mounted on an FR4 printed-circuit board. 1999 Apr 23 2 emitter-base voltage collector current (DC) peak collector current peak base current total power dissipation storage temperature junction temperature operating ambient temperature Tamb ≤ 25 °C; note 1 open collector open base − − − − − − − −65 − −65 65 45 6 100 200 200 250 +150 150 +150 V V V mA mA mA mW °C °C °C PARAMETER collector-base voltage CONDITIONS open emitter − − 80 50 V V MIN. MAX. UNIT Philips Semiconductors Product specification NPN general purpose transistors THERMAL CHARACTERISTICS SYMBOL Rth j-a Note 1. Transistor mounted on an FR4 printed-circuit board. CHARACTERISTICS Tj = 25 °C unless otherwise specified. SYMBOL ICBO IEBO hFE PARAMETER collector cut-off current emitter cut-off current DC current gain BC846A; BC847A BC846B; BC847B BC847C DC current gain BC846 BC847 BC846A;BC847A BC846B; BC847B BC847C VCEsat VBEsat VBE Cc fT F Notes 1. VBEsat decreases by about 1.7 mV/K with increasing temperature. 2. VBE decreases by about 2 mV/K with increasing temperature. collector-emitter saturation voltage base-emitter saturation voltage base-emitter voltage collector capacitance transition frequency noise figure IC = 10 mA; IB = 0.5 mA IC = 100 mA; IB = 5 mA IC = 10 mA; IB = 0.5 mA; note 1 IC = 100 mA; IB = 5 mA; note 1 IC = 2 mA; VCE = 5 V; note 2 IC = 10 mA; VCE = 5 V; note 2 IE = ie = 0; VCB = 10 V; f = 1 MHz; IC = 200 µA; VCE = 5 V; RS = 2 kΩ; f = 1 kHz; B = 200 Hz IC = 2 mA; VCE = 5 V; see Figs 2, 3 and 4 CONDITIONS IE = 0; VCB = 30 V IE = 0; VCB = 30 V; Tj = 150 °C IC = 0; VEB = 5 V IC = 10 µA; VCE = 5 V; see Figs 2, 3 and 4 MIN. − − − − − − 110 110 110 200 420 − − − − 580 − − − PARAMETER thermal resistance from junction to ambient CONDITIONS note 1 BC846; BC847 VALUE 500 UNIT K/W TYP. − − − 90 150 270 − − 180 290 520 90 200 700 900 660 − 2.5 − 2 MAX. 15 5 100 − − − 450 800 220 450 800 250 600 − − 700 770 − − 10 UNIT nA µA nA mV mV mV mV mV mV pF MHz dB IC = 10 mA; VCE = 5 V; f = 100 MHz; 100 1999 Apr 23 3 Philips Semiconductors Product specification NPN general purpose transistors BC846; BC847 handbook, full pagewidth 250 MBH723 hFE 200 VCE = 5 V 150 100 50 0 10−2 10−1 1 10 102 IC (mA) 103 BC846A; BC847A. Fig.2 DC current gain; typical values. handbook, full pagewidth 300 MBH724 hFE VCE = 5 V 200 100 0 10−2 10−1 1 10 102 IC (mA) 103 BC846B; BC847B. Fig.3 DC current gain; typical values. 1999 Apr 23 4 Philips Semiconductors Product specification NPN general purpose transistors BC846; BC847 handbook, full pagewidth 600 MBH725 VCE = 5 V hFE 400 200 0 10−2 10−1 1 10 102 IC (mA) 103 BC847C. Fig.4 DC current gain; typical values. 1999 Apr 23 5 Philips Semiconductors Product specification NPN general purpose transistors PACKAGE OUTLINE Plastic surface mount...

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