Maker : Philips Semiconductors
Part No. : BC846BPN

  Datasheet PDF : BC846BPN.pdf
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Product Information

www.DataSheet4U.com BC846BPN 65 V, 100 mA NPN/PNP general-purpose transistor Rev. 01 — 17 July 2009 Product data sheet 1. Product profile 1.1 General description NPN/PNP general-purpose transistor pair in a very small Surface-Mounted Device (SMD) plastic package. Table 1. Product overview Package NXP BC846BPN SOT363 JEITA SC-88 NPN/NPN complement BC846BS PNP/PNP complement BC856BS Type number 1.2 Features I I I I I I Low collector capacitance Low collector-emitter saturation voltage Closely matched current gain Reduces number of components and board space No mutual interference between the transistors AEC-Q101 qualified 1.3 Applications I General-purpose switching and amplification 1.4 Quick reference data Table 2. Symbol VCEO IC TR1 (NPN) hFE TR2 (PNP) hFE DC current gain VCE = −5 V; IC = −2 mA 200 290 450 DC current gain VCE = 5 V; IC = 2 mA 200 300 450 Quick reference data Parameter collector-emitter voltage collector current Conditions open base Min Typ Max 65 100 Unit V mA Per transistor; for the PNP transistor with negative polarity www.DataSheet4U.com NXP Semiconductors BC846BPN 65 V, 100 mA NPN/PNP general-purpose transistor 2. Pinning information Table 3. Pin 1 2 3 4 5 6 Pinning Description emitter TR1 base TR1 collector TR2 emitter TR2 base TR2 collector TR1 1 2 3 1 2 sym019 Simplified outline 6 5 4 Graphic symbol 6 5 4 TR2 TR1 3 3. Ordering information Table 4. Ordering information Package Name BC846BPN SC-88 Description plastic surface-mounted package; 6 leads Version SOT363 Type number 4. Marking Table 5. Marking codes Marking code[1] PJ* Type number BC846BPN [1] * = -: made in Hong Kong * = p: made in Hong Kong * = t: made in Malaysia * = W: made in China BC846BPN_1 © NXP B.V. 2009. All rights reserved. Product data sheet Rev. 01 — 17 July 2009 2 of 15 www.DataSheet4U.com NXP Semiconductors BC846BPN 65 V, 100 mA NPN/PNP general-purpose transistor 5. Limiting values Table 6. Limiting values In accordance with the Absolute Maximum Rating System (IEC 60134). Symbol VCBO VCEO VEBO IC ICM IBM Ptot Per device Ptot Tj Tamb Tstg [1] Parameter collector-base voltage collector-emitter voltage emitter-base voltage collector current peak collector current peak base current total power dissipation total power dissipation junction temperature ambient temperature storage temperature Conditions open emitter open base open collector single pulse; tp ≤ 1 ms single pulse; tp ≤ 1 ms Tamb ≤ 25 °C Tamb ≤ 25 °C [1] Min −55 −65 Max 80 65 6 100 200 200 200 300 150 +150 +150 Unit V V V mA mA mA mW mW °C °C °C Per transistor; for the PNP transistor with negative polarity [1] Device mounted on an FR4 Printed-Circuit Board (PCB), single-sided copper, tin-plated and standard footprint. 500 Ptot (mW) 400 006aab618 300 200 100 0 −75 −25 25 75 125 175 Tamb (°C) FR4 PCB, standard footprint Fig 1. Per device: Power derating curve SOT363 (SC-88) BC846BPN_1 © NXP B.V. 2009. All rights reserved. Product data sheet Rev. 01 — 17 July 2009 3 of 15 www.DataSheet4U.com NXP Semiconductors BC846BPN 65 V, 100 mA NPN/PNP general-purpose transistor 6. Thermal characteristics Table 7. Symbol Rth(j-a) Rth(j-sp) Per device Rth(j-a) [1] Thermal characteristics Parameter thermal resistance from junction to ambient thermal resistance from junction to solder point thermal resistance from junction to ambient in free air [1] Conditions in free air [1] Min - Typ - Max 625 230 Unit K/W K/W Per transistor - - 416 K/W Device mounted on an FR4 PCB, single-sided copper, tin-plated and standard footprint. 103 Zth(j-a) (K/W) 102 δ=1 0.75 0.50 0.33 0.20 0.10 0.05 0.02 10 0.01 0 006aab619 1 10−5 10−4 10−3 10−2 10−1 1 10 102 tp (s) 103 FR4 PCB, standard footprint Fig 2. Per transistor: Transient thermal impedance from junction to ambient as a function of pulse duration; typical values BC846BPN_1 © NXP B.V. 2009. All rights reserved. Product data s...

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