Maker : Philips Semiconductors
Part No. : BC846BS

  Datasheet PDF : BC846BS.pdf
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Product Information

BC846BS Rev. 01 — 24 August 2009 www.DataSheet4U.com 65 V, 100 mA NPN/NPN general-purpose transistor Product data sheet 1. Product profile 1.1 General description NPN/NPN general-purpose transistor pair in a very small Surface-Mounted Device (SMD) plastic package. Table 1. Product overview Package NXP BC846BS SOT363 JEITA SC-88 PNP/PNP complement BC856BS NPN/PNP complement BC846BPN Type number 1.2 Features I I I I I I Low collector capacitance Low collector-emitter saturation voltage Closely matched current gain Reduces number of components and board space No mutual interference between the transistors AEC-Q101 qualified 1.3 Applications I General-purpose switching and amplification 1.4 Quick reference data Table 2. Symbol VCEO IC hFE Quick reference data Parameter collector-emitter voltage collector current DC current gain VCE = 5 V; IC = 2 mA Conditions open base Min 200 Typ 300 Max 65 100 450 Unit V mA Per transistor NXP Semiconductors www.DataSheet4U.com BC846BS 65 V, 100 mA NPN/NPN general-purpose transistor 2. Pinning information Table 3. Pin 1 2 3 4 5 6 Pinning Description emitter TR1 base TR1 collector TR2 emitter TR2 base TR2 collector TR1 1 2 3 1 2 sym020 Simplified outline 6 5 4 Graphic symbol 6 5 4 TR2 TR1 3 3. Ordering information Table 4. Ordering information Package Name BC846BS SC-88 Description plastic surface-mounted package; 6 leads Version SOT363 Type number 4. Marking Table 5. BC846BS [1] * = -: made in Hong Kong * = p: made in Hong Kong * = t: made in Malaysia * = W: made in China Marking codes Marking code[1] *E5 Type number 5. Limiting values Table 6. Limiting values In accordance with the Absolute Maximum Rating System (IEC 60134). Symbol VCBO VCEO VEBO IC ICM IBM Ptot BC846BS_1 Parameter collector-base voltage collector-emitter voltage emitter-base voltage collector current peak collector current peak base current total power dissipation Conditions open emitter open base open collector single pulse; tp ≤ 1 ms single pulse; tp ≤ 1 ms Tamb ≤ 25 °C [1] Min - Max 80 65 6 100 200 200 200 Unit V V V mA mA mA mW Per transistor © NXP B.V. 2009. All rights reserved. Product data sheet Rev. 01 — 24 August 2009 2 of 12 NXP Semiconductors www.DataSheet4U.com BC846BS 65 V, 100 mA NPN/NPN general-purpose transistor Table 6. Limiting values …continued In accordance with the Absolute Maximum Rating System (IEC 60134). Symbol Per device Ptot Tj Tamb Tstg [1] Parameter total power dissipation junction temperature ambient temperature storage temperature Conditions Tamb ≤ 25 °C [1] Min −55 −65 Max 300 150 +150 +150 Unit mW °C °C °C Device mounted on an FR4 Printed-Circuit Board (PCB), single-sided copper, tin-plated and standard footprint. 500 Ptot (mW) 400 006aab618 300 200 100 0 −75 −25 25 75 125 175 Tamb (°C) FR4 PCB, standard footprint Fig 1. Per device: Power derating curve SOT363 (SC-88) 6. Thermal characteristics Table 7. Symbol Rth(j-a) Rth(j-sp) Per device Rth(j-a) [1] Thermal characteristics Parameter thermal resistance from junction to ambient thermal resistance from junction to solder point thermal resistance from junction to ambient in free air [1] Conditions in free air [1] Min - Typ - Max 625 230 Unit K/W K/W Per transistor - - 416 K/W Device mounted on an FR4 PCB, single-sided copper, tin-plated and standard footprint. BC846BS_1 © NXP B.V. 2009. All rights reserved. Product data sheet Rev. 01 — 24 August 2009 3 of 12 NXP Semiconductors www.DataSheet4U.com BC846BS 65 V, 100 mA NPN/NPN general-purpose transistor 103 Zth(j-a) (K/W) 102 δ=1 0.75 0.50 0.33 0.20 0.10 0.05 0.02 10 0.01 0 006aab619 1 10−5 10−4 10−3 10−2 10−1 1 10 102 tp (s) 103 FR4 PCB, standard footprint Fig 2. Per transistor: Transient thermal impedance from junction to ambient as a function of pulse duration; typical values 7. Characteristics Table 8. Characteristics Tamb = 25 °C unless otherwise speci�...

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