Maker : Philips Semiconductors
Part No. : BC846BT

  Datasheet PDF : BC846BT.pdf
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DISCRETE SEMICONDUCTORS DATA SHEET M3D173 BC846T; BC847T NPN general purpose transistors Preliminary specification Supersedes data of 1997 Jul 07 1999 Apr 26 Philips Semiconductors Preliminary specification NPN general purpose transistors FEATURES • Low current (max. 100 mA) • Low voltage (max. 65 V). APPLICATIONS • General purpose switching and amplification, especially in portable communication equipment • Electronic data processing (EDP) and consumer applications. DESCRIPTION NPN transistor in an SC-75 plastic package. PNP complements: BC856T and BC857T. 1 2 handbook, halfpage BC846T; BC847T PINNING PIN 1 2 3 base emitter collector DESCRIPTION 3 3 1 2 MAM348 MARKING TYPE NUMBER BC846AT BC846BT BC847AT MARKING CODE 1A 1B 1E TYPE NUMBER BC847BT BC847CT MARKING CODE 1F 1G Top view Fig.1 Simplified outline (SC-75) and symbol. LIMITING VALUES In accordance with the Absolute Maximum Rating System (IEC 134). SYMBOL VCBO PARAMETER collector-base voltage BC846AT; BC846BT BC847AT; BC847BT; BC847CT VCEO collector-emitter voltage BC846AT; BC846BT BC847AT; BC847BT; BC847CT VEBO IC ICM IBM Ptot Tstg Tj Tamb Note 1. Transistor mounted on an FR4 printed-circuit board. emitter-base voltage collector current (DC) peak collector current peak base current total power dissipation storage temperature junction temperature operating ambient temperature Tamb ≤ 25 °C; note 1 open collector open base − − − − − − − −65 − −65 65 45 5 100 200 100 150 +150 150 +150 V V V mA mA mA mW °C °C °C CONDITIONS open emitter − − 80 50 V V MIN. MAX. UNIT 1999 Apr 26 2 Philips Semiconductors Preliminary specification NPN general purpose transistors THERMAL CHARACTERISTICS SYMBOL Rth j-a Note 1. Transistor mounted on an FR4 printed-circuit board. CHARACTERISTICS Tamb = 25 °C unless otherwise specified. SYMBOL ICBO IEBO hFE PARAMETER collector cut-off current emitter cut-off current DC current gain BC846AT; BC847AT BC846BT; BC847BT BC847CT VCEsat VBE Cc Ce fT F Note 1. Pulse test: tp ≤ 300 µs; δ ≤ 0.02. collector-emitter saturation voltage base-emitter voltage collector capacitance emitter capacitance transition frequency noise figure IC = 10 mA; IB = 0.5 mA IC = 100 mA; IB = 5 mA; note 1 IC = 2 mA; VCE = 5 V IC = 10 mA; VCE = 5 V IE = ie = 0; VCB = 10 V; f = 1 MHz IC = 10 mA; VCE = 5 V; f = 100 MHz IC = 200 µA; VCE = 5 V; RS = 2 kΩ; f = 1 kHz; B = 200 Hz CONDITIONS IE = 0; VCB = 30 V IE = 0; VCB = 30 V; Tj = 150 °C IC = 0; VEB = 5 V IC = 2 mA; VCE = 5 V PARAMETER thermal resistance from junction to ambient CONDITIONS note 1 BC846T; BC847T VALUE 833 UNIT K/W MIN. − − − 110 200 420 − − 580 − − 100 − TYP. − − − − − − − − − − − 11 − − MAX. 15 5 100 220 450 800 200 400 700 770 1.5 − − 10 UNIT nA µA nA mV mV mV mV pF pF MHz dB IC = ic = 0; VEB = 500 mV; f = 1 MHz − 1999 Apr 26 3 Philips Semiconductors Preliminary specification NPN general purpose transistors BC846T; BC847T handbook, full pagewidth 250 MBH723 hFE 200 VCE = 5 V 150 100 50 0 10−2 BC846AT; BC847AT. 10−1 1 10 102 IC (mA) 103 Fig.2 DC current gain; typical values. handbook, full pagewidth 300 MBH724 hFE VCE = 5 V 200 100 0 10−2 BC846BT; BC847BT. 10−1 1 10 102 IC (mA) 103 Fig.3 DC current gain; typical values. 1999 Apr 26 4 Philips Semiconductors Preliminary specification NPN general purpose transistors BC846T; BC847T handbook, full pagewidth 600 MBH725 VCE = 5 V hFE 400 200 0 10−2 10−1 1 10 102 IC (mA) 103 BC847CT. Fig.4 DC current gain; typical values. 1999 Apr 26 5 Philips Semiconductors Preliminary specification NPN general purpose transistors PACKAGE OUTLINE Plastic surface mounted package; 3 leads BC846T; BC847T SOT416 D B E A X v M A HE 3 Q A 1 e1 e bp 2 w M B A1 c Lp detail X 0 0.5 scale 1 mm DIMENSIONS (mm are the original dimensions) UNIT mm A 0.95 0.60 A1 max 0.1 bp 0.30 0.15 c 0...

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