Maker : Diotec Semiconductor
Part No. : BC846BW

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Product Information

BC 846W ... BC 850W NPN General Purpose Transistors NPN Surface mount Si-Epitaxial PlanarTransistors Si-Epitaxial PlanarTransistoren für die Oberflächenmontage Power dissipation – Verlustleistung 2±0.1 0.3 3 200 mW SOT-323 0.01 g 1±0.1 1.25±0.1 Plastic case Kunststoffgehäuse Weight approx. – Gewicht ca. Plastic material has UL classification 94V-0 Gehäusematerial UL94V-0 klassifiziert Standard packaging taped and reeled Standard Lieferform gegurtet auf Rolle Type Code 1 2 1.3 Dimensions / Maße in mm 1=B 2=E 3=C Maximum ratings (TA = 25/C) BC 846W Collector-Emitter-voltage Collector-Base-voltage Emitter-Base-voltage Power dissipation – Verlustleistung Collector current – Kollektorstrom (DC) Peak Collector current – Kollektor-Spitzenstrom Peak Base current – Basis-Spitzenstrom Peak Emitter current – Emitter-Spitzenstrom Junction temperature – Sperrschichttemperatur Storage temperature – Lagerungstemperatur B open E open C open VCE0 VCB0 VEB0 Ptot IC ICM IBM - IEM Tj TS 65 V 80 V 6V 2.1±0.1 Grenzwerte (TA = 25/C) BC 847W BC 850W 45 V 50 V 200 mW ) 100 mA 200 mA 200 mA 200 mA 150/C - 65…+ 150/C 1 BC 848W BC 849W 30 V 30 V 5V Characteristics (Tj = 25/C) Group A DC current gain – Kollektor-Basis-Stromverhältnis ) VCE = 5 V, IC = 10 :A VCE = 5 V, IC = 2 mA h-Parameters at VCE = 5V, IC = 2 mA, f = 1 kHz Small signal current gain – Stromverstärkung hfe Input impedance – Eingangs-Impedanz Output admittance – Ausgangs-Leitwert Reverse voltage transfer ratio Spannungsrückwirkung 1 Kennwerte (Tj = 25/C) Group B typ. 150 200...450 typ. 330 3.2...8.5 kS 30 < 60 :S typ. 2 *10-4 Group C typ. 270 420...800 typ. 600 6...15 kS 60 < 110 :S typ. 3 *10-4 2 hFE hFE typ. 90 110...220 typ. 220 1.6...4.5 kS 18 < 30 :S typ.1.5 *10-4 hie hoe hre ) Mounted on P.C. board with 3 mm2 copper pad at each terminal Montage auf Leiterplatte mit 3 mm2 Kupferbelag (Lötpad) an jedem Anschluß 2 ) Tested with pulses tp = 300 :s, duty cycle # 2% – Gemessen mit Impulsen tp = 300 :s, Schaltverhältnis # 2% 12 01.11.2003 General Purpose Transistors Characteristics (Tj = 25/C) Min. Collector saturation volt. – Kollektor-Sättigungsspannung 1) IC = 10 mA, IB = 0.5 mA IC = 100 mA, IB = 5 mA IC = 10 mA, IB = 0.5 mA IC = 100 mA, IB = 5 mA Base-Emitter voltage – Basis-Emitter-Spannung ) VCE = 5 V, IC = 2 mA VCE = 5 V, IC = 10 mA Collector-Base cutoff current – Kollektorreststrom IE = 0, VCB = 30 V IE = 0, VCB = 30 V, Tj = 150/C Emitter-Base cutoff current – Emitterreststrom IC = 0, VEB = 5 V Gain-Bandwidth Product – Transitfrequenz VCE = 5 V, IC = 10 mA, f = 100 MHz VCB = 10 V, IE = ie = 0, f = 1 MHz VEB = 0.5 V, IC = ic = 0, f = 1 MHz Noise figure – Rauschzahl VCE = 5 V, IC = 200 :A RG = 2 kS, f = 1 kHz, )f = 200 Hz VCE = 5 V, IC = 200 :A RG = 2 kS, f = 1 kHz, f = 30 ... 15000 Hz BC 846W... F BC 848W BC 849W... F BC 850W BC 849W BC 850W F F – – RthA – fT CCB0 CEB0 100 MHz – – IEB0 – ICB0 ICB0 – – VBEon VBEon 580 mV – 1 BC 846W ... BC 850W Kennwerte (Tj = 25/C) Typ. 90 mV 200 mV 700 mV 900 mV 660 mV – – – – Max. 250 mV 600 mV – – 700 mV 770 mV 15 nA 5 :A 100 nA – VCEsat VCEsat 1 – – – – Base saturation voltage – Basis-Sättigungsspannung ) VBEsat VBEsat Collector-Base Capacitance – Kollektor-Basis-Kapazität 3.5 pF 9 pF 6 pF – Emitter-Base Capacitance – Emitter-Basis-Kapazität 2 dB 1.2 dB 1.4 dB 1.4 dB 10 dB 4 dB 4 dB 4 dB 620 K/W 2) Thermal resistance junction to ambient air Wärmewiderstand Sperrschicht – umgebende Luft Recommended complementary PNP transistors Empfohlene komplementäre PNP-Transistoren BC 846AW = 1A Marking of available current gain groups per type Stempelung der lieferbaren Stromverstärkungsgruppen pro Typ BC 847AW = 1E BC 848AW = 1J BC 856W ... BC 860W BC 846BW = 1B BC 847BW = 1F BC 848BW = 1K BC 849BW = 2B BC 850BW = 2F BC 847CW = 1G BC 848CW = 1L BC 849CW = 2C BC 850CW = 2G ) Tested with pulses tp = 300 :s, duty cycle #...

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