|
Free integrated circuits, diodes, triacs, and other semiconductors Datasheet Search and Download Site
| datasheet.co.kr > datasheet > BC846B > General Purpose Transistors(NPN Silicon) |
|
|
General Purpose Transistors(NPN Silicon)Maker : ON Semiconductor
Shortcut : BC846 BC846 BC846 BC846 BC846 BC846 BC846 BC846 BC846 BC846 BC846 BC846-BC850 BC846A BC846A BC846A BC846A BC846A BC846A BC846A BC846A BC846A BC846A BC846A BC846A-Z1A BC846AF BC846ALT1 BC846ALT1 BC846ALT1 BC846ALT1 BC846ALT1 BC846AT BC846AT BC846AW BC846AW BC846AW BC846AW BC846AW BC846AWT1 BC846AWT1 BC846AWT1 BC846B BC846B BC846B BC846B BC846B BC846B BC846B BC846B BC846B BC846B BC846B BC846B BC846B-1B BC846BDW1T1 BC846BF BC846BLT1 BC846BLT1 BC846BLT1 BC846BLT1 BC846BPDW1T1 BC846BPN BC846BS BC846BT BC846BT BC846BW BC846BW BC846BW BC846BW BC846BW BC846BWT1 BC846BWT1 BC846BWT1 BC846C BC846CW BC846DS BC846F BC846F BC846PN BC846PN BC846S BC846S BC846S BC846S BC846S BC846T BC846T BC846U BC846U BC846UF BC846UPN BC846W BC846W BC846W BC846W BC846W BC846W-BC850W |
|
Product Information |
|
MOTOROLA SEMICONDUCTOR TECHNICAL DATA General Purpose Transistors Order this document by BC846ALT1/D NPN Silicon 1 BASE COLLECTOR 3 BC846ALT1,BLT1 BC847ALT1, BLT1,CLT1 thru BC850BLT1,CLT1 2 EMITTER BC846, BC847 and BC848 are Motorola Preferred Devices MAXIMUM RATINGS Rating Collector – Emitter Voltage Collector – Base Voltage Emitter – Base Voltage Collector Current — Continuous Symbol VCEO VCBO VEBO IC BC846 65 80 6.0 100 BC847 BC850 45 50 6.0 100 BC848 BC849 30 30 5.0 100 Unit V V V mAdc CASE 318 – 08, STYLE 6 SOT– 23 (TO – 236AB) Symbol PD 225 1.8 RqJA PD 300 2.4 RqJA TJ, Tstg 417 – 55 to +150 mW mW/°C °C/W °C 556 mW mW/°C °C/W Max Unit 1 2 3 THERMAL CHARACTERISTICS Characteristic Total Device Dissipation FR– 5 Board, (1) TA = 25°C Derate above 25°C Thermal Resistance, Junction to Ambient Total Device Dissipation Alumina Substrate, (2) TA = 25°C Derate above 25°C Thermal Resistance, Junction to Ambient Junction and Storage Temperature DEVICE MARKING BC846ALT1 = 1A; BC846BLT1 = 1B; BC847ALT1 = 1E; BC847BLT1 = 1F; BC847CLT1 = 1G; BC848ALT1 = 1J; BC848BLT1 = 1K; BC848CLT1 = 1L ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted) Characteristic Symbol Min Typ Max Unit OFF CHARACTERISTICS Collector – Emitter Breakdown Voltage BC846A,B (IC = 10 mA) BC847A,B,C, BC850B,C BC848A,B,C, BC849B,C Collector – Emitter Breakdown Voltage BC846A,B (IC = 10 µA, VEB = 0) BC847A,B,C, BC850B,C BC848A,B,C, BC849B,C Collector – Base Breakdown Voltage (IC = 10 mA) Emitter – Base Breakdown Voltage (IE = 1.0 mA) BC846A,B BC847A,B,C, BC850B,C BC848A,B,C, BC849B,C BC846A,B BC847A,B,C BC848A,B,C, BC849B,C, BC850B,C V(BR)CEO 65 45 30 80 50 30 80 50 30 6.0 6.0 5.0 — — — — — — — — — — — — — — — — — — — — — — — — — — — — 15 5.0 V V(BR)CES V V(BR)CBO V V(BR)EBO V Collector Cutoff Current (VCB = 30 V) (VCB = 30 V, TA = 150°C) 1. FR–5 = 1.0 x 0.75 x 0.062 in 2. Alumina = 0.4 x 0.3 x 0.024 in. 99.5% alumina. Thermal Clad is a trademark of the Bergquist Company. Preferred devices are Motorola recommended choices for future use and best overall value. ICBO nA µA REV 1 Motorola Small–Signal Transistors, FETs and Diodes Device Data © Motorola, Inc. 1997 1 BC846ALT1, BLT1 BC847ALT1, BLT1, CLT1 thru BC850ALT1, BLT1, CLT1 ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted) (Continued) Characteristic Symbol Min Typ Max Unit ON CHARACTERISTICS DC Current Gain (IC = 10 µA, VCE = 5.0 V) BC846A, BC847A, BC848A BC846B, BC847B, BC848B BC847C, BC848C BC846A, BC847A, BC848A BC846B, BC847B, BC848B, BC849B, BC850B BC847C, BC848C, BC849C, BC850C VCE(sat) VBE(sat) VBE(on) hFE — — — 110 200 420 — — — — 580 — 90 150 270 180 290 520 — — 0.7 0.9 660 — — — — 220 450 800 0.25 0.6 — — 700 770 V V mV — (IC = 2.0 mA, VCE = 5.0 V) Collector – Emitter Saturation Voltage (IC = 10 mA, IB = 0.5 mA) Collector – Emitter Saturation Voltage (IC = 100 mA, IB = 5.0 mA) Base – Emitter Saturation Voltage (IC = 10 mA, IB = 0.5 mA) Base – Emitter Saturation Voltage (IC = 100 mA, IB = 5.0 mA) Base – Emitter Voltage (IC = 2.0 mA, VCE = 5.0 V) Base – Emitter Voltage (IC = 10 mA, VCE = 5.0 V) SMALL– SIGNAL CHARACTERISTICS Current – Gain — Bandwidth Product (IC = 10 mA, VCE = 5.0 Vdc, f = 100 MHz) Output Capacitance (VCB = 10 V, f = 1.0 MHz) Noise Figure (IC = 0.2 mA, VCE = 5.0 Vdc, RS = 2.0 kΩ, f = 1.0 kHz, BW = 200 Hz) BC846A, BC847A, BC848A BC846B, BC847B, BC848B BC847C, BC848C BC849B,C, BC850B,C 1.0 VCE = 10 V TA = 25°C V, VOLTAGE (VOLTS) 0.9 0.8 0.7 0.6 0.5 0.4 0.3 0.2 0.1 0.2 0.2 0.5 50 2.0 5.0 10 1.0 20 IC, COLLECTOR CURRENT (mAdc) 100 200 0 0.1 VCE(sat) @ IC/IB = 10 0.2 0.3 0.5 0.7 1.0 2.0 3.0 5.0 7.0 10 20 30 IC, COLLECTOR CURRENT (mAdc) 50 70 100 VBE(on) @ VCE = 10 V TA = 25°C VBE(sat) @ IC/IB = 10 fT Cobo NF — — — — 10 4.0 100 — — — — 4.5 MHz pF dB 2.0 hFE , NORMALIZED DC CURREN... |
|
Link URL |
| http://www.datasheet.co.kr/datasheet-html/B/C/8/BC846B_ONSemiconductor.pdf.html |
|
Since 2010 - jixjix@gmail.com -
MOSFET -
TTL -
LINEAR VOLTAGE REGULATOR |