Maker : Philips Semiconductors
Part No. : BC846DS

  Datasheet PDF : BC846DS.pdf
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Product Information

www.DataSheet4U.com BC846DS 65 V, 100 mA NPN/NPN general-purpose transistor Rev. 01 — 17 July 2009 Product data sheet 1. Product profile 1.1 General description NPN/NPN general-purpose transistor pair in a small SOT457 (SC-74) Surface-Mounted Device (SMD) plastic package. 1.2 Features I I I I I I Low collector capacitance Low collector-emitter saturation voltage Closely matched current gain Reduces number of components and board space No mutual interference between the transistors AEC-Q101 qualified 1.3 Applications I General-purpose switching and amplification 1.4 Quick reference data Table 1. Symbol VCEO IC hFE Quick reference data Parameter collector-emitter voltage collector current DC current gain VCE = 5 V; IC = 2 mA Conditions open base Min 200 Typ 300 Max 65 100 450 Unit V mA Per transistor www.DataSheet4U.com NXP Semiconductors BC846DS 65 V, 100 mA NPN/NPN general-purpose transistor 2. Pinning information Table 2. Pin 1 2 3 4 5 6 Pinning Description emitter TR1 base TR1 collector TR2 emitter TR2 base TR2 collector TR1 1 2 sym020 Simplified outline 6 5 4 Graphic symbol 6 5 4 TR2 1 2 3 TR1 3 3. Ordering information Table 3. Ordering information Package Name BC846DS SC-74 Description plastic surface-mounted package (TSOP6); 6 leads Version SOT457 Type number 4. Marking Table 4. BC846DS Marking codes Marking code ZK Type number 5. Limiting values Table 5. Limiting values In accordance with the Absolute Maximum Rating System (IEC 60134). Symbol VCBO VCEO VEBO IC ICM IBM Ptot Per device Ptot total power dissipation Tamb ≤ 25 °C [1] Parameter collector-base voltage collector-emitter voltage emitter-base voltage collector current peak collector current peak base current total power dissipation Conditions open emitter open base open collector single pulse; tp ≤ 1 ms single pulse; tp ≤ 1 ms Tamb ≤ 25 °C [1] Min - Max 80 65 6 100 200 200 250 380 Unit V V V mA mA mA mW mW Per transistor BC846DS_1 © NXP B.V. 2009. All rights reserved. Product data sheet Rev. 01 — 17 July 2009 2 of 12 www.DataSheet4U.com NXP Semiconductors BC846DS 65 V, 100 mA NPN/NPN general-purpose transistor Table 5. Limiting values …continued In accordance with the Absolute Maximum Rating System (IEC 60134). Symbol Tj Tamb Tstg [1] Parameter junction temperature ambient temperature storage temperature Conditions Min −55 −65 Max 150 +150 +150 Unit °C °C °C Device mounted on an FR4 Printed-Circuit Board (PCB), single-sided copper, tin-plated and standard footprint. 500 Ptot (mW) 400 006aab621 300 200 100 0 −75 −25 25 75 125 175 Tamb (°C) FR4 PCB, standard footprint Fig 1. Per device: Power derating curve SOT457 (SC-74) 6. Thermal characteristics Table 6. Symbol Rth(j-a) Rth(j-sp) Per device Rth(j-a) [1] Thermal characteristics Parameter thermal resistance from junction to ambient thermal resistance from junction to solder point thermal resistance from junction to ambient in free air [1] Conditions in free air [1] Min - Typ - Max 500 250 Unit K/W K/W Per transistor - - 328 K/W Device mounted on an FR4 PCB, single-sided copper, tin-plated and standard footprint. BC846DS_1 © NXP B.V. 2009. All rights reserved. Product data sheet Rev. 01 — 17 July 2009 3 of 12 www.DataSheet4U.com NXP Semiconductors BC846DS 65 V, 100 mA NPN/NPN general-purpose transistor 103 Zth(j-a) (K/W) 102 δ=1 0.75 0.50 0.33 0.20 0.10 0.05 0.02 10 0.01 0 006aab622 1 10−5 10−4 10−3 10−2 10−1 1 10 102 tp (s) 103 FR4 PCB, standard footprint Fig 2. Per transistor: Transient thermal impedance from junction to ambient as a function of pulse duration; typical values 7. Characteristics Table 7. Characteristics Tamb = 25 °C unless otherwise specified. Symbol Parameter Per transistor ICBO collector-base cut-off VCB = 50 V; IE = 0 A current VCB = 30 V; IE = 0 A; Tj = 150 °C emitter-base cut-off current DC current gain VEB = 6 V; IC = 0 A VCE = 5 V IC = 10 µA IC = 2 mA VCEs...

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