Maker : Infineon Technologies AG
Part No. : BC846UPN

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BC846UPN NPN/PNP Silicon AF Transistor Array For AF input stages and driver applications High current gain Low collector-emitter saturation voltage Two (galvanic) internal isolated NPN/PNP Transistors in one package 5 6 4 1For calculation of R thJA please refer to Application Note Thermal Resistance 1




3 2 1 VPW09197 C1 6 B2 5 E2 4 Tape loading orientation Top View 6 5 4 W1s 1 2 3 Direction of Unreeling Position in tape: pin 1 opposite of feed hole side SC74_Tape TR1 Marking on SC74 package (for example W1s) corresponds to pin 1 of device TR2 1 E1 2 B1 3 C2 EHA07177 Type BC846UPN Maximum Ratings Parameter Marking 1Os Pin Configuration Package 1=E 2=B 3=C 4=E 5=B 6=C SC74 Symbol VCEO VCBO VCES VEBO IC ICM Ptot Tj Tstg Value 65 80 80 5 100 200 250 150 -65 ... 150 mW °C V V mA Unit V Collector-emitter voltage Collector-base voltage Collector-emitter voltage Emitter-base voltage DC collector current Peak collector current Total power dissipation, TS = 118 °C Junction temperature Storage temperature Thermal Resistance Junction - soldering point1) RthJS 130 K/W Aug-21-2002 BC846UPN Electrical Characteristics at TA=25°C, unless otherwise specified Parameter Symbol Values min. DC Characteristics per Transistor Collector-emitter breakdown voltage IC = 10 mA, IB = 0 Collector-base breakdown voltage IC = 10 µA, IE = 0 Collector-emitter breakdown voltage IC = 10 µA, VBE = 0 Emitter-base breakdown voltage IE = 10 µA, IC = 0 Collector cutoff current VCB = 30 V, IE = 0 Collector cutoff current VCB = 30 V, IE = 0 , TA = 150 °C DC current gain 1) IC = 10 µA, VCE = 5 V IC = 2 mA, VCE = 5 V Collector-emitter saturation voltage1) IC = 10 mA, IB = 0.5 mA IC = 100 mA, IB = 5 mA Base-emitter saturation voltage 1) IC = 10 mA, IB = 0.5 mA IC = 100 mA, IB = 5 mA Base-emitter voltage 1) IC = 2 mA, VCE = 5 V IC = 10 mA, VCE = 5 V VBE(ON) 580 660 750 820 VBEsat 700 900 VCEsat 90 200 300 650 hFE 200 250 290 450 ICBO 5 ICBO 15 V(BR)EBO 5 V(BR)CES 80 V(BR)CBO 80 V(BR)CEO 65 typ. max. Unit V nA µA - mV mV 1) Pulse test: t < 300 s; D < 2%
2 Aug-21-2002 BC846UPN Electrical Characteristics at TA=25°C, unless otherwise specified Parameter Symbol Values min. AC Characteristics per Transistor Transition frequency IC = 20 mA, VCE = 5 V, f = 100 MHz Collector-base capacitance VCB = 10 V, f = 1 MHz Emitter-base capacitance VEB = 0.5 V, f = 1 MHz IC = 2 mA, VCE = 5 V, f = 1 kHz Open-circuit reverse voltage transf.ratio IC = 2 mA, VCE = 5 V, f = 1 kHz Short-circuit forward current transf.ratio IC = 2 mA, VCE = 5 V, f = 1 kHz IC = 2 mA, VCE = 5 V, f = 1 kHz Open-circuit output admittance h21e h22e 330 30 h12e 2 Short-circuit input impedance Ceb h11e 10 4.5 Ccb 2 fT 250 typ. max. Unit MHz pF 10-4 S 3 Aug-21-2002
k  BC846UPN Total power dissipation Ptot = f (TS ) 300 mW P tot 200 150 100 50 0 0 20 40 60 80 100 120 °C 150 TS Permissible Pulse Load RthJS = f (tp ) Permissible Pulse Load Ptotmax / PtotDC = f (tp) 10 3 K/W 10 3 Ptotmax / PtotDC 10 2 RthJS 10 2 10 1 10 0 D=0.5 0.2 0.1 0.05 0.02 0.01 0.005 0 D=0 0.005 0.01 0.02 0.05 0.1 0.2 0.5 10 1 10 -1 -6 10 10 -5 10 -4 10 -3 10 -2 s 10 0 10 0 -6 10 10 -5 10 -4 10 -3 10 -2 s 10 0 tp tp 4 Aug-21-2002 BC846UPN Collector-base capacitance CCB = f (VCBO) Emitter-base capacitance CEB = f (VEBO ) BC 846...850 EHP00361 Transition frequency fT = f (IC) VCE = 5V 10 3 MHz EHP00363 C CB0 ( C EB0 ) 12 pF 10 fT 5 8 C EB 6 10 2 4 5 C CB 2 0 10 -1 5 10 0 V VCB0 10 1 (VEB0 ) 10 1 10 -1 5 10 0 5 10 1 mA 10 2 ΙC Collector cutoff current ICBO = f (TA) VCB = 30V 10 4 nA EHP00381 Collector-emitter saturation voltage IC = f (VCEsat), h FE = 20 10 2 EHP00367 Ι CB0 10 3 5 10 2 5 10 1 5 10 5 10 -1 0 ΙC mA 100 C 25 C -50 C max 10 1 5 typ 10 5 0 0 50 100 C TA 150 10 -1 0 0.1 0.2 0.3 0.4 V 0.5 VCEsat 5 Aug-21-2002 BC846UPN DC current gain hFE = f (IC ) VCE = 5V 10 3 EHP00365...

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