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Part No. : BC846ALT1

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Product Information

BC846ALT1 Series BC846, BC847 and BC848 are Preferred Devices www.DataSheet4U.com General Purpose Transistors NPN Silicon Features http://onsemi.com COLLECTOR 3 1 BASE Symbol VCEO 65 45 30 VCBO 80 50 30 VEBO BC846 BC847, BC850 BC848, BC849 Collector Current − Continuous IC 6.0 6.0 5.0 100 mAdc Vdc Vdc 1 2 • Pb−Free Packages are Available • Moisture Sensitivity Level: 1 • ESD Rating − Human Body Model: >4000 V ESD Rating − Machine Model: >400 V MAXIMUM RATINGS Rating Collector-Emitter Voltage BC846 BC847, BC850 BC848, BC849 Collector−Base Voltage BC846 BC847, BC850 BC848, BC849 Emitter−Base Voltage Value Unit Vdc 2 EMITTER 3 SOT−23 CASE 318 STYLE 6 Maximum ratings are those values beyond which device damage can occur. Maximum ratings applied to the device are individual stress limit values (not normal operating conditions) and are not valid simultaneously. If these limits are exceeded, device functional operation is not implied, damage may occur and reliability may be affected. MARKING DIAGRAM xxD THERMAL CHARACTERISTICS Characteristic Total Device Dissipation FR− 5 Board, (Note 1) TA = 25°C Derate above 25°C Thermal Resistance, Junction−to−Ambient (Note 1) Total Device Dissipation Alumina Substrate (Note 2) TA = 25°C Derate above 25°C Thermal Resistance, Junction−to−Ambient (Note 2) Junction and Storage Temperature Range Symbol PD Max 225 Unit mW xx D = Specific Device Code = Date Code 1.8 RqJA PD 556 300 mW/°C °C/W mW ORDERING INFORMATION See detailed ordering and shipping information in the package dimensions section on page 5 of this data sheet. 2.4 RqJA TJ, Tstg 417 −55 to +150 mW/°C °C/W °C Preferred devices are recommended choices for future use and best overall value. 1. FR−5 = 1.0  0.75  0.062 in. 2. Alumina = 0.4  0.3  0.024 in 99.5% alumina. © Semiconductor Components Industries, LLC, 2004 1 June, 2004 − Rev. 6 Publication Order Number: BC846ALT1/D BC846ALT1 Series ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted) Characteristic www.DataSheet4U.com OFF CHARACTERISTICS Collector −Emitter Breakdown Voltage BC846A,B (IC = 10 mA) BC847A,B,C, BC850B,C BC848A,B,C, BC849B,C Collector −Emitter Breakdown Voltage BC846A,B (IC = 10 mA, VEB = 0) BC847A,B,C BC850B,C BC848A,B,C, BC849B,C Collector −Base Breakdown Voltage (IC = 10 mA) Emitter −Base Breakdown Voltage (IE = 1.0 mA) Collector Cutoff Current (VCB = 30 V) (VCB = 30 V, TA = 150°C) ON CHARACTERISTICS DC Current Gain (IC = 10 mA, VCE = 5.0 V) BC846A, BC847A, BC848A BC846B, BC847B, BC848B BC847C, BC848C BC846A, BC847A, BC848A BC846B, BC847B, BC848B, BC849B, BC850B BC847C, BC848C, BC849C, BC850C VCE(sat) VBE(sat) VBE(on) hFE − − − 110 200 420 − − − − 580 − 90 150 270 180 290 520 − − 0.7 0.9 660 − − − − 220 450 800 0.25 0.6 − − 700 770 V V mV − BC846A,B BC847A,B,C, BC850B,C BC848A,B,C, BC849B,C BC846A,B BC847A,B,C, BC850B,C BC848A,B,C, BC849B,C V(BR)CEO 65 45 30 80 50 30 80 50 30 6.0 6.0 5.0 − − − − − − − − − − − − − − − − − − − − − − − − − − − − 15 5.0 V Symbol Min Typ Max Unit V(BR)CES V V(BR)CBO V V(BR)EBO V ICBO nA mA (IC = 2.0 mA, VCE = 5.0 V) Collector −Emitter Saturation Voltage (IC = 10 mA, IB = 0.5 mA) Collector −Emitter Saturation Voltage (IC = 100 mA, IB = 5.0 mA) Base −Emitter Saturation Voltage (IC = 10 mA, IB = 0.5 mA) Base −Emitter Saturation Voltage (IC = 100 mA, IB = 5.0 mA) Base −Emitter Voltage (IC = 2.0 mA, VCE = 5.0 V) Base −Emitter Voltage (IC = 10 mA, VCE = 5.0 V) SMALL−SIGNAL CHARACTERISTICS Current −Gain − Bandwidth Product (IC = 10 mA, VCE = 5.0 Vdc, f = 100 MHz) Output Capacitance (VCB = 10 V, f = 1.0 MHz) Noise Figure (IC = 0.2 mA, VCE = 5.0 Vdc, RS = 2.0 kW, f = 1.0 kHz, BW = 200 Hz) BC846A,B, BC847A,B,C, BC848A,B,C BC849B,C, BC850B,C fT Cobo NF 100 − − − − − − − − 4.5 10 4.0 MHz pF dB Figure 1. http://onsemi.com 2 ...

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