Maker : Infineon Technologies AG
Part No. : BC850CW

  Datasheet PDF : BC850CW.pdf
  Cross Reference : BC850CW Cross Reference
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Product Information

BC846W...BC850W NPN Silicon AF Transistors For AF input stages and driver applications High current gain Low collector-emitter saturation voltage Low noise between 30 Hz and 15 kHz Complementary types: BC856W, BC857W, BC858W BC859W, BC860W (PNP) 3 Type BC846AW BC846BW BC847AW BC847BW BC847CW BC848AW BC848BW BC848CW BC849BW BC849CW BC850BW BC850CW




2 1 VSO05561 Marking 1As 1Bs 1Es 1Fs 1Gs 1Js 1Ks 1Ls 2Bs 2Cs 2Fs 4Gs 1=B 1=B 1=B 1=B 1=B 1=B 1=B 1=B 1=B 1=B 1=B 1=B Pin Configuration 2=E 2=E 2=E 2=E 2=E 2=E 2=E 2=E 2=E 2=E 2=E 2=E 3=C 3=C 3=C 3=C 3=C 3=C 3=C 3=C 3=C 3=C 3=C 3=C Package SOT323 SOT323 SOT323 SOT323 SOT323 SOT323 SOT323 SOT323 SOT323 SOT323 SOT323 SOT323 1 Dec-11-2001 BC846W...BC850W Maximum Ratings Parameter Collector-emitter voltage Collector-base voltage Collector-emitter voltage Emitter-base voltage DC collector current Peak collector current Peak base current Peak emitter current Total power dissipation, TS = 124 °C Junction temperature Storage temperature Symbol VCEO VCBO VCES VEBO IC ICM IBM IEM Ptot Tj Tstg BC846W BC847W BC848W Unit BC850W BC849W 65 80 80 6 45 50 50 6 100 200 200 200 250 150 -65 ... 150 mW °C 30 30 30 5 mA mA V Thermal Resistance Junction - soldering point 1) RthJS Symbol min. DC Characteristics Collector-emitter breakdown voltage IC = 10 mA, IB = 0 BC846W BC847/850W BC848/849W
105 Values typ. max. K/W Electrical Characteristics at TA = 25°C, unless otherwise specified. Parameter Unit V(BR)CEO V 65 45 30 - Collector-base breakdown voltage IC = 10 µA, IE = 0 BC846W BC847/850W BC848/849W V(BR)CBO 80 50 30 1For calculation of R thJA please refer to Application Note Thermal Resistance 2 Dec-11-2001 BC846W...BC850W Electrical Characteristics at TA = 25°C, unless otherwise specified. Parameter Symbol Values min. DC Characteristics Collector-emitter breakdown voltage IC = 10 µA, VBE = 0 BC846W BC847/850W BC848/849W Unit max. V typ. V(BR)CES 80 50 30 V(BR)EBO BC846/847W BC848-850W - 15 5 nA µA - Emitter-base breakdown voltage IE = 1 µA, IC = 0 Collector cutoff current VCB = 30 V, IE = 0 Collector cutoff current VCB = 30 V, IE = 0 , TA = 150 °C DC current gain 1) IC = 10 µA, VCE = 5 V hFE -group A hFE -group B hFE -group C DC current gain 1) IC = 2 mA, VCE = 5 V hFE -group A hFE -group B hFE -group C Collector-emitter saturation voltage1) IC = 10 mA, IB = 0.5 mA IC = 100 mA, IB = 5 mA Base-emitter saturation voltage 1) IC = 10 mA, IB = 0.5 mA IC = 100 mA, IB = 5 mA Base-emitter voltage 1) IC = 2 mA, VCE = 5 V IC = 10 mA, VCE = 5 V 1) Pulse test: t ≤=300µs, D = 2% 6 5 ICBO ICBO hFE hFE 110 200 420 VCEsat VBEsat VBE(ON) 580 - 140 250 480 180 290 520 90 200 700 900 660 - 220 450 800 mV 250 600 700 770 3 Dec-11-2001 BC846W...BC850W Electrical Characteristics at TA = 25 °C, unless otherwise specified. Parameter Symbol Values min. AC characteristics Transition frequency IC = 20 mA, VCE = 5 V, f = 100 MHz Collector-base capacitance VCB = 10 V, f = 1 MHz Emitter-base capacitance VEB = 0.5 V, f = 1 MHz Short-circuit input impedance IC = 2 mA, VCE = 5 V, f = 1 kHz fT Ccb Ceb h11e hFE -gr.A hFE -gr.B hFE -gr.C h12e h21e h22e 18 30 60 10 200 330 600 1.5 2 3 2.7 4.5 8.7 250 2 10 3 15 typ. max. Unit MHz pF F BC848W Noise figure IC = 200 µA, VCE = 5 V, RS = 2 k , f = 1 kHz, f = 200 Hz Equivalent noise voltage IC = 200 µA, VCE = 5 V, RS = 2 k , f = 10 ... 50 Hz F BC849W BC850W Vn BC850W - 1.2 1 - 4 4 0.135 µV 4 Dec-11-2001  Open-circuit reverse voltage transf.ratio IC = 2 mA, VCE = 5 V, f = 1 kHz hFE -gr.A hFE -gr.B hFE -gr.C Short-circuit forward current transf.ratio IC = 2 mA, VCE = 5 V, f = 1 kHz hFE -gr.A hFE -gr.B hFE -gr.C Open-circuit output admittance IC = 2 mA, VCE = 5 V, f = 1 kHz hFE -gr.A hFE -gr.B hFE -gr.C Noise figure IC = 200 µA, VCE = 5 V, RS = 2 k , BC846W f = 1 kHz, f = 200 Hz BC847W 10-4 - dB
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  BC846W...BC850W Total power dissipation Ptot = f (TS ) Collector-base capacitance CCB = f (VCBO) Em...

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