Maker : Philips Semiconductors
Part No. : BC850C

  Datasheet PDF : BC850C.pdf
  Cross Reference : BC850C Cross Reference
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Shortcut : BC850  BC850  BC850  BC850  BC850  BC850  BC850  BC850  BC850ALT1  BC850ALT1  BC850B  BC850B  BC850B  BC850B  BC850B-2FZ  BC850BLT1  BC850BLT1  BC850BLT1  BC850BLT1  BC850BT  BC850BW  BC850BW  BC850BW  BC850BW  BC850C  BC850C  BC850C  BC850C  BC850C-Z2G  BC850CLT1  BC850CLT1  BC850CLT1  BC850CT  BC850CW  BC850CW  BC850CW  BC850CW  BC850VLT1  BC850W  BC850W  BC850W 

Product Information

DISCRETE SEMICONDUCTORS DATA SHEET book, halfpage M3D088 BC849; BC850 NPN general purpose transistors Product specification Supersedes data of 1998 Aug 06 1999 Apr 08 Philips Semiconductors Product specification NPN general purpose transistors FEATURES • Low current (max. 100 mA) • Low voltage (max. 45 V). APPLICATIONS • General purpose switching and amplification. DESCRIPTION NPN transistor in a SOT23 plastic package. PNP complements: BC859 and BC860. MARKING TYPE NUMBER BC849B BC849C Note 1. ∗ = p : Made in Hong Kong. ∗ = t : Made in Malaysia. MARKING CODE(1) 2B∗ 2C∗ TYPE NUMBER BC850B BC850C MARKING CODE(1) 2F∗ 2G∗ Top view handbook, halfpage BC849; BC850 PINNING PIN 1 2 3 base emitter collector DESCRIPTION 3 3 1 2 1 2 MAM255 Fig.1 Simplified outline (SOT23) and symbol. LIMITING VALUES In accordance with the Absolute Maximum Rating System (IEC 134). SYMBOL VCBO BC849 BC850 VCEO collector-emitter voltage BC849 BC850 VEBO IC ICM IBM Ptot Tstg Tj Tamb Note 1. Transistor mounted on an FR4 printed-circuit board. emitter-base voltage collector current (DC) peak collector current peak base current total power dissipation storage temperature junction temperature operating ambient temperature Tamb ≤ 25 °C; note 1 open collector open base − − − − − − − −65 − −65 30 45 5 100 200 200 250 +150 150 +150 V V V mA mA mA mW °C °C °C PARAMETER collector-base voltage CONDITIONS open emitter − − 30 50 V V MIN. MAX. UNIT 1999 Apr 08 2 Philips Semiconductors Product specification NPN general purpose transistors THERMAL CHARACTERISTICS SYMBOL Rth j-a Note 1. Transistor mounted on an FR4 printed-circuit board. CHARACTERISTICS Tj = 25 °C unless otherwise specified. SYMBOL ICBO IEBO hFE PARAMETER collector cut-off current emitter cut-off current DC current gain BC849B; BC850B BC849C; BC850C DC current gain BC849B; BC850B BC849C; BC850C VCEsat VBEsat VBE Cc Ce fT F collector-emitter saturation voltage base-emitter saturation voltage base-emitter voltage collector capacitance emitter capacitance transition frequency noise figure IC = 10 mA; IB = 0.5 mA IC = 100 mA; IB = 5 mA IC = 10 mA; IB = 0.5 mA; note 1 IC = 100 mA; IB = 5 mA; note 1 IC = 2 mA; VCE = 5 V; note 2 IC = 10 mA; VCE = 5 V; note 2 IE = ie = 0; VCB = 10 V; f = 1 MHz IC = 10 mA; VCE = 5 V; f = 100 MHz IC = 200 µA; VCE = 5 V; RS = 2 kΩ; f = 10 Hz to 15.7 kHz IC = 200 µA; VCE = 5 V; RS = 2 kΩ; f = 1 kHz; B = 200 Hz Notes 1. VBEsat decreases by about 1.7 mV/K with increasing temperature. 2. VBE decreases by about 2 mV/K with increasing temperature. IC = 2 mA; VCE = 5 V; see Figs 2 and 3 CONDITIONS IE = 0; VCB = 30 V IE = 0; VCB = 30 V; Tj = 150 °C IC = 0; VEB = 5 V IC = 10 µA; VCE = 5 V; see Figs 2 and 3 MIN. − − − − − 200 420 − − − − 580 − − 100 − − PARAMETER thermal resistance from junction to ambient CONDITIONS note 1 BC849; BC850 VALUE 500 UNIT K/W TYP. − − − 240 450 290 520 90 200 700 900 660 − 2.5 11 − − − MAX. 15 5 100 − − 450 800 250 600 − − 700 770 − − − 4 4 UNIT nA µA nA mV mV mV mV mV mV pF pF MHz dB dB IC = ic = 0; VEB = 500 mV; f = 1 MHz − 1999 Apr 08 3 Philips Semiconductors Product specification NPN general purpose transistors BC849; BC850 handbook, full pagewidth 300 MBH724 hFE VCE = 5 V 200 100 0 10−2 10−1 1 10 102 IC (mA) 103 BC849B; BC850B. Fig.2 DC current gain; typical values. handbook, full pagewidth 600 MBH725 VCE = 5 V hFE 400 200 0 10−2 10−1 1 10 102 IC (mA) 103 BC849C; BC850C. Fig.3 DC current gain; typical values. 1999 Apr 08 4 Philips Semiconductors Product specification NPN general purpose transistors PACKAGE OUTLINE Plastic surface mounted package; 3 leads BC849; BC850 SOT23 D B E A X HE v M A 3 Q A A1 1 e1 e bp 2 w M B detail X Lp c 0 1 scale 2 mm DIMENSIONS (mm are the original dimensions) UNIT mm A 1.1 0.9 A1 max. 0.1 bp 0.48 0.38 c 0.15 0.09 D 3.0 2...

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