Maker : Philips Semiconductors
Part No. : BC850W

  Datasheet PDF : BC850W.pdf
  Cross Reference : BC850W Cross Reference
  Buy Component : BC850W Find Stock and Price

Shortcut : BC850  BC850  BC850  BC850  BC850  BC850  BC850  BC850  BC850ALT1  BC850ALT1  BC850B  BC850B  BC850B  BC850B  BC850B-2FZ  BC850BLT1  BC850BLT1  BC850BLT1  BC850BLT1  BC850BT  BC850BW  BC850BW  BC850BW  BC850BW  BC850C  BC850C  BC850C  BC850C  BC850C-Z2G  BC850CLT1  BC850CLT1  BC850CLT1  BC850CT  BC850CW  BC850CW  BC850CW  BC850CW  BC850VLT1  BC850W  BC850W  BC850W 

Product Information

DISCRETE SEMICONDUCTORS DATA SHEET book, halfpage M3D102 BC849W; BC850W NPN general purpose transistors Product specification Supersedes data of 1997 Jun 20 1999 Apr 12 Philips Semiconductors Product specification NPN general purpose transistors FEATURES • Low current (max. 100 mA) • Low voltage (max. 45 V). APPLICATIONS • Low noise stages in tape recorders, hi-fi amplifiers and other audio-frequency equipment. DESCRIPTION NPN transistor in a SOT323 plastic package. PNP complements: BC859W and BC860W. MARKING TYPE NUMBER BC849BW BC849CW Note 1. ∗ = - : Made in Hong Kong. ∗ = t : Made in Malaysia. Fig.1 MARKING CODE(1) 2B∗ 2C∗ TYPE NUMBER BC850BW BC850CW MARKING CODE(1) 2F∗ 2G∗ handbook, halfpage BC849W; BC850W PINNING PIN 1 2 3 base emitter collector DESCRIPTION 3 3 1 2 1 Top view 2 MAM062 Simplified outline (SOT323) and symbol. LIMITING VALUES In accordance with the Absolute Maximum Rating System (IEC 134). SYMBOL VCBO PARAMETER collector-base voltage BC849W BC850W VCEO collector-emitter voltage BC849W BC850W VEBO IC ICM IBM Ptot Tstg Tj Tamb Note 1. Transistor mounted on an FR4 printed-circuit board. emitter-base voltage collector current (DC) peak collector current peak base current total power dissipation storage temperature junction temperature operating ambient temperature Tamb ≤ 25 °C; note 1 open collector open base − − − − − − − −65 − −65 30 45 5 100 200 200 200 +150 150 +150 V V V mA mA mA mW °C °C °C CONDITIONS open emitter − − 30 50 V V MIN. MAX. UNIT 1999 Apr 12 2 Philips Semiconductors Product specification NPN general purpose transistors THERMAL CHARACTERISTICS SYMBOL Rth j-a Note 1. Transistor mounted on an FR4 printed-circuit board. CHARACTERISTICS Tamb = 25 °C unless otherwise specified. SYMBOL ICBO IEBO hFE PARAMETER collector cut-off current emitter cut-off current DC current gain BC849BW; BC850BW BC849CW; BC850CW VCEsat VBE Cc Ce fT F collector-emitter saturation voltage base-emitter voltage collector capacitance emitter capacitance transition frequency noise figure IC = 10 mA; IB = 0.5 mA IC = 100 mA; IB = 5 mA; note 1 IC = 2 mA; VCE = 5 V IC = 10 mA; VCE = 5 V IE = ie = 0; VCB = 10 V; f = 1 MHz IC = ic = 0; VEB = 500 mV; f = 1 MHz IC = 10 mA; VCE = 5 V; f = 100 MHz IC = 200 µA; VCE = 5 V; RS = 2 kΩ; f = 10 Hz to 15.7 kHz IC = 200 µA; VCE = 5 V; RS = 2 kΩ; f = 1 kHz; B = 200 Hz Note 1. Pulse test: tp ≤ 300 µs; δ ≤ 0.02. CONDITIONS IE = 0; VCB = 30 V IE = 0; VCB = 30 V; Tj = 150 °C IC = 0; VEB = 5 V IC = 2 mA; VCE = 5 V; see Figs 2 and 3 PARAMETER thermal resistance from junction to ambient CONDITIONS note 1 BC849W; BC850W VALUE 625 UNIT K/W MIN. − − − 200 420 − − 580 − − − 100 − − TYP. − − − − − − − − − − 11 − − − MAX. 15 5 100 450 800 250 600 700 770 3 − − 4 4 UNIT nA µA nA mV mV mV mV pF pF MHz dB dB 1999 Apr 12 3 Philips Semiconductors Product specification NPN general purpose transistors BC849W; BC850W handbook, full pagewidth 300 MBH724 hFE VCE = 5 V 200 100 0 10−2 10−1 1 10 102 IC (mA) 103 BC849BW; BC850BW. Fig.2 DC current gain; typical values. handbook, full pagewidth 600 MBH725 VCE = 5 V hFE 400 200 0 10−2 10−1 1 10 102 IC (mA) 103 BC849CW; BC850CW. Fig.3 DC current gain; typical values. 1999 Apr 12 4 Philips Semiconductors Product specification NPN general purpose transistors PACKAGE OUTLINE Plastic surface mounted package; 3 leads BC849W; BC850W SOT323 D B E A X y HE v M A 3 Q A A1 c 1 e1 e bp 2 w M B Lp detail X 0 1 scale 2 mm DIMENSIONS (mm are the original dimensions) UNIT mm A 1.1 0.8 A1 max 0.1 bp 0.4 0.3 c 0.25 0.10 D 2.2 1.8 E 1.35 1.15 e 1.3 e1 0.65 HE 2.2 2.0 Lp 0.45 0.15 Q 0.23 0.13 v 0.2 w 0.2 OUTLINE VERSION SOT323 REFERENCES IEC JEDEC EIAJ SC-70 EUROPEAN PROJECTION ISSUE DATE 97-02-28 1999 Apr 12 5 Philips Semiconductors Product specification NPN general purpose ...

Link URL