Maker : Philips Semiconductors
Part No. : BC856BS

  Datasheet PDF : BC856BS.pdf
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Product Information

www.DataSheet4U.com BC856BS 65 V, 100 mA PNP/PNP general-purpose transistor Rev. 01 — 11 August 2009 Product data sheet 1. Product profile 1.1 General description PNP/PNP general-purpose transistor pair in a very small Surface-Mounted Device (SMD) plastic package. Table 1. Product overview Package NXP BC856BS SOT363 JEITA SC-88 NPN/NPN complement BC846BS NPN/PNP complement BC846BPN Type number 1.2 Features I I I I I I Low collector capacitance Low collector-emitter saturation voltage Closely matched current gain Reduces number of components and board space No mutual interference between the transistors AEC-Q101 qualified 1.3 Applications I General-purpose switching and amplification 1.4 Quick reference data Table 2. Symbol VCEO IC hFE Quick reference data Parameter collector-emitter voltage collector current DC current gain VCE = −5 V; IC = −2 mA Conditions open base Min 200 Typ 290 Max −65 −100 450 Unit V mA Per transistor www.DataSheet4U.com NXP Semiconductors BC856BS 65 V, 100 mA PNP/PNP general-purpose transistor 2. Pinning information Table 3. Pin 1 2 3 4 5 6 Pinning Description emitter TR1 base TR1 collector TR2 emitter TR2 base TR2 collector TR1 1 2 3 1 2 sym018 Simplified outline 6 5 4 Graphic symbol 6 5 4 TR2 TR1 3 3. Ordering information Table 4. Ordering information Package Name BC856BS SC-88 Description plastic surface-mounted package; 6 leads Version SOT363 Type number 4. Marking Table 5. BC856BS [1] * = -: made in Hong Kong * = p: made in Hong Kong * = t: made in Malaysia * = W: made in China Marking codes Marking code[1] *E6 Type number BC856BS_1 © NXP B.V. 2009. All rights reserved. Product data sheet Rev. 01 — 11 August 2009 2 of 12 www.DataSheet4U.com NXP Semiconductors BC856BS 65 V, 100 mA PNP/PNP general-purpose transistor 5. Limiting values Table 6. Limiting values In accordance with the Absolute Maximum Rating System (IEC 60134). Symbol VCBO VCEO VEBO IC ICM IBM Ptot Per device Ptot Tj Tamb Tstg [1] Parameter collector-base voltage collector-emitter voltage emitter-base voltage collector current peak collector current peak base current total power dissipation total power dissipation junction temperature ambient temperature storage temperature Conditions open emitter open base open collector single pulse; tp ≤ 1 ms single pulse; tp ≤ 1 ms Tamb ≤ 25 °C Tamb ≤ 25 °C [1] Min −55 −65 Max −80 −65 −6 −100 −200 −200 200 300 150 +150 +150 Unit V V V mA mA mA mW mW °C °C °C Per transistor [1] Device mounted on an FR4 Printed-Circuit Board (PCB), single-sided copper, tin-plated and standard footprint. 500 Ptot (mW) 400 006aab618 300 200 100 0 −75 −25 25 75 125 175 Tamb (°C) FR4 PCB, standard footprint Fig 1. Per device: Power derating curve SOT363 (SC-88) BC856BS_1 © NXP B.V. 2009. All rights reserved. Product data sheet Rev. 01 — 11 August 2009 3 of 12 www.DataSheet4U.com NXP Semiconductors BC856BS 65 V, 100 mA PNP/PNP general-purpose transistor 6. Thermal characteristics Table 7. Symbol Rth(j-a) Rth(j-sp) Per device Rth(j-a) [1] Thermal characteristics Parameter thermal resistance from junction to ambient thermal resistance from junction to solder point thermal resistance from junction to ambient in free air [1] Conditions in free air [1] Min - Typ - Max 625 230 Unit K/W K/W Per transistor - - 416 K/W Device mounted on an FR4 PCB, single-sided copper, tin-plated and standard footprint. 103 Zth(j-a) (K/W) 102 δ=1 0.75 0.50 0.33 0.20 0.10 0.05 0.02 10 0.01 0 006aab619 1 10−5 10−4 10−3 10−2 10−1 1 10 102 tp (s) 103 FR4 PCB, standard footprint Fig 2. Per transistor: Transient thermal impedance from junction to ambient as a function of pulse duration; typical values BC856BS_1 © NXP B.V. 2009. All rights reserved. Product data sheet Rev. 01 — 11 August 2009 4 of 12 www.DataSheet4U.com NXP Semiconductors BC856BS 65 V, 100 mA PNP/PNP general-purpose transistor 7. ...

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